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    3187 TRANSISTOR Search Results

    3187 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3187 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX510

    Abstract: DSA003768
    Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 TYPICAL CHARACTERISTICS 1000 VCB=-5V f=100MHz 600 IC - mA fT - (MHz) 800 400 IB=-5.0mA IB=-4.5mA IB=-4.0mA -200 IB=-3.5mA IB=-3.0mA IB=-2.5mA -150 IB=-2.0mA -10 -20 -30 -40 -100 -5 PARAMETER SYMBOL


    Original     		PDF ZTX510 100MHz 400MHz -10mA, -30mA, -100mA, -10mA* ZTX510 DSA003768

    GH-027

    Abstract: 80 L hall effect sensor LT HALL SENSOR A3185 A3185ELT A3187 A3188 A3189
    Text: Data Sheet 27609.2A 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect latches are extremely temperature-stable and stressresistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible


    Original     		PDF

    A3185

    Abstract: A3185ELT A3187 A3188 A3189 GH-027
    Text: Data Sheet 27609.2A 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect latches are extremely temperature-stable and stressresistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible


    Original     		PDF

    RP2 hall effect sensor

    Abstract: hall effect sensor 3144 "Brushless DC Motor" 3141 hall effect sensor 4 pin hall effect dC motor 2N4356 3059 dual 4 pin hall sensor zero crossing IC single phase reactive power circuit diagram
    Text: DUAL-OUTPUT HALL-EFFECT SWITCH 3235 2 3 4 GROUND 1 OUTPUT2 V CC Each sensor IC includes a Hall voltage generator, two Schmitt triggers, a voltage regulator, output transistors, and on-board reverse polarity protection. The regulator enables these devices to operate


    Original     		PDF UGN3235K RP2 hall effect sensor hall effect sensor 3144 "Brushless DC Motor" 3141 hall effect sensor 4 pin hall effect dC motor 2N4356 3059 dual 4 pin hall sensor zero crossing IC single phase reactive power circuit diagram

    2SA745

    Abstract: C4555 SA174 C-4555 c455 2SA1745 2SC4555 E1140 24555
    Text: Ordering number:EN 3187 2SA1745/2SC4555 PNP/NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose _ _ _ Amp Applications Features • Very small-sized package permitting the 2SAl745/2SC4555-applied sets to be made small and slim • Low collector-to-emitter saturation voltage


    OCR Scan     		PDF 2SA1745/2SC4555 2SAl745/2SC4555-applied 2SA1745 2SA745 C4555 SA174 C-4555 c455 2SA1745 2SC4555 E1140 24555

    C-4555

    Abstract: c4555
    Text: O rd e rin g n u m b n r: EN 3 1 8 7 2SA1745/2SC4555 No.3187 PNP/NPN Epitaxial Planar Silicon Transistor S A \Y O Low-Frequency G eneral-Purpose _Amp A pplications Features •Very small-sized package perm itting the 2SAl745/2SC4555-applied sets to be made small and slim


    OCR Scan     		PDF 2SA1745/2SC4555 2SAl745/2SC4555-applied 2SA1745 200mA 2SA1745/2SC4555 2SA1745 2SC4555 7219YT 1745/2S 1745/2SC C-4555 c4555

    bc 853 npn transistor

    Abstract: Transistor - BC 547, CL 100
    Text: LIN Doc #.*3187 € H i n M I T he I nfinit e f / i n LX3187 ï t K I I I I C I K M N I C S P ow er of S I n n o v a t io n ervo P A D ctuator r e l i m i n a r y D ESC RIPTIO N The LX3187 is a transconductor power driver for the voice coil actuator in high-performance disk drive


    OCR Scan     		PDF LX3187 LX3187 11-bit E53A00 bc 853 npn transistor Transistor - BC 547, CL 100

    Untitled

    Abstract: No abstract text available
    Text: 19- 7186; Rev 0; 2/97 > k l > J X I > k l ± 15kVESD -Protected, EM C-Com pliant, 230kbps, D u al R S-232 S e ria l P o rt fo r M otherboards/Desktops Features The MAX3187 complete, dual DTE RS-232 serial port meets the stringent ESD requirements of the European


    OCR Scan     		PDF 15kVESD 230kbps, S-232 MAX3187 RS-232 RS-232 1-0040A

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 - MARCH 94 FEATU RES * 12 Volt V,CEO fT=400MHz ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYM BO L Emitter-Base Voltage VALUE UNIT v CBO -12 V VCEO -12 V V


    OCR Scan     		PDF 400MHz -100mA, -10mA* -30mA, 100MHz 140KHz 300ns.

    3187 transistor

    Abstract: ztx51 ZTX510
    Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 -MARCH 94 FEATURES * 12 V o lt V,CEO f T= 4 0 0 M H z ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base V oltage C ollectbr-Em itter Voltage VALUE U N IT v CBO -12 V V V v CEO -12 Emitter-Base Voltage


    OCR Scan     		PDF 400MHz -10nA -10mA -30mA, 100MHz 140KHz -30rhA, ZTX510 3187 transistor ztx51 ZTX510

    BD438

    Abstract: BD440 transistor bd438 BD442 bd440 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Symbol


    OCR Scan     		PDF BD437 BD441. BD438 BD440 BD442 BD442 transistor bd438 bd440 transistor

    upa dual transistor

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR U P A q00T PRELIMINARY FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz HIGH GAIN: |S21 E|2 = 7.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE680 UPA800T UPA800T-T1, bM27525 00b5771 upa dual transistor

    3187 transistor

    Abstract: UPA800T
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T PRELIMINARY FEATURES • OUTLINE DIMENSIONS U nits in m m SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S 21 E|2 = 7.5 dB TYP at 2 GHz


    OCR Scan     		PDF UPA800T NE680 UPA800T 3187 transistor

    T092

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO -25 V Collector-Emitter Voltage v CEO VEBO -25 V -5 V Continuous Collector Current !C -500 mA Power Dissipation at Tamy=25°C


    OCR Scan     		PDF 10-IOmA, -30mA, -100rr 100MHz 140KHz T092

    5607 transistor

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • NE856M02 OUTLINE DIMENSIONS Units in mm HIGH COLLECTOR CURRENT: PACKAGE OUTLINE M02 100 mA M A X • BOTTOM VIEW NEW HIGH GAIN POWER MINI-MOLD PACKAGE (S O T -8 9 T Y P E )


    OCR Scan     		PDF NE856M02 5607 transistor

    RF730

    Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
    Text: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:


    OCR Scan     		PDF IRF730, IRF731, IRF732, IRF733 50V-400V IRF732 IRF733 rf730 RF730 IRF730 IRF731 ISF730 JBF731

    te 2443 MOTOROLA transistor

    Abstract: 2N6318 2N63 TO-213AA
    Text: MOTOROLA SC X S T R S /R 1 HE D I F b3b?254 G0ô4b30 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE SILICON POWER TRANSISTORS , . . designed for general-purpose power amplifier and switching applications, 6 0 -8 0 VOLTS


    OCR Scan     		PDF

    2SB1615

    Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538
    Text: 118 • Package No. b^32fiS2 Applica­ tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type


    OCR Scan     		PDF A2SB1610 A2SD2472 2SB1537 2SD2357 2SB1538 12SD2358 A2SB1619 A2SD2483 A2SB1611 IA2SD2473 2SB1615 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188

    Untitled

    Abstract: No abstract text available
    Text: HALL-EFFECT LA TCHES FOR HIGH-TEMPERA TURE OPERA TLON These Hall-effect latches are extremely temperature-stable and stressresistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible


    OCR Scan     		PDF

    2SA1224

    Abstract: E90115
    Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­


    OCR Scan     		PDF NE74014 NE90100 NE90115 NE901 665um) 462um) 690um) IS12I 2SA1224 E90115

    2N4209

    Abstract: 2n4208
    Text: MOTOROLA SC XSTRS/R F 15E D | t3t?2SM G O A t ^ A Ö r-s'?*' s' 2N4208 2N4209 CASE 22-03, STYLE 1 TO-18 TO-206AA) MAXIMUM RATINGS Sym bol 2N4208 2N4209 Unit Collector-Emitter Voltage V cEO 12 15 Vdc Collector-Base Voltage V cB O 12 15 Vdc Emitter-Base Voltage


    OCR Scan     		PDF 2N4208 2N4209 O-206AA) 2N4209

    marking code H.5 Sot 23-5

    Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
    Text: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature


    OCR Scan     		PDF TC4730A) 100mA: OT-23-5 100mA marking code H.5 Sot 23-5 Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47

    BD438 equivalent

    Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE


    OCR Scan     		PDF BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR

    BA3422S

    Abstract: TA6270 BA340 stereo preamplifier 16 pin ic BA6280AF BA313 DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK BA3310N microphone preamplifier with alc DUAL playback PRE-AMPLIFIER
    Text: THTTnl M o n o lith ic ICs I ICs for Audio Applications CD Amplifiers Type Function BA6280AF PWM driver for CD players BA6281F PWM driver for CD players BA6290A BTL driver for CD players BA6292 BA6294 BA6295F BA6296F BTL driver for CD players BTL driver for CD players


    OCR Scan     		PDF BA6280AF TA6270 A6290A BA6290A, 10-pin BA6290 ampl121A A3413F/BA3413FS BA3422S BA340 stereo preamplifier 16 pin ic BA313 DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK BA3310N microphone preamplifier with alc DUAL playback PRE-AMPLIFIER