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    319B Price and Stock

    KEMET Corporation CBR06C319B5GAC

    CAP CER 3.1PF 50V C0G/NP0 0603
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    DigiKey CBR06C319B5GAC Cut Tape 8,572 1
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    KEMET Corporation CBR06C319B5GACAUTO

    CAP CER 3.1PF 50V C0G/NP0 0603
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    DigiKey CBR06C319B5GACAUTO Digi-Reel 7,840 1
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    CBR06C319B5GACAUTO Reel 4,000 4,000
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    Analog Devices Inc ADM6319B31ARJZ-RL7

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    DigiKey ADM6319B31ARJZ-RL7 Cut Tape 3,335 1
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    ADM6319B31ARJZ-RL7 Digi-Reel 3,335 1
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    Mouser Electronics ADM6319B31ARJZ-RL7 8,874
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    Analog Devices Inc ADM6319B31ARJZ-RL7 3,667 1
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    Rochester Electronics ADM6319B31ARJZ-RL7 12,758 1
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    Analog Devices Inc ADM6319B25ARJZ-R7

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    Rochester Electronics ADM6319B25ARJZ-R7 9,438 1
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    Nihon Dempa Kogyo Co Ltd NSC5319B-26M

    XTAL OSC TCXO 26.0000MHZ SMD
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    DigiKey NSC5319B-26M Cut Tape 1,000 1
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    NSC5319B-26M Digi-Reel 1,000 1
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    319B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    319B Narda Microwave HIGH POWER WAVEGUIDE TERMINATION (Dummy Loads) Original PDF

    319B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HVM132WK

    Abstract: SC-59A Hitachi DSA00304
    Text: ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 2 Jan. 1996 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-319B HVM132WK Tst10 100MHz SC-59A HVM132WK SC-59A Hitachi DSA00304

    03p4

    Abstract: Hitachi DSA001653
    Text: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HVM132WK ADE-208-319B 100MHz SC-59A 03p4 Hitachi DSA001653

    319C

    Abstract: gdfp2-f16 national
    Text: INCH-POUND MIL-M-38510/319C 14 July 2003 _ SUPERSEDING MIL-M-38510/319B 4 March 1985 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, 4 BY 4 REGISTER FILE, CASCADABLE, MONOLITHIC SILICON Inactive for new design after 18 April 1997. This specification is approved for use by all Departments


    Original     		PDF MIL-M-38510/319C MIL-M-38510/319B MIL-M38510 MIL-PRF-38535, 319C gdfp2-f16 national

    100k Linear slide Potentiometer

    Abstract: 700-136
    Text: Date: 08/18/06 Ref.#: TW-700136 Potentiometer 312-319BF-Value 45 41 2 8 5 M2 x .4 1.2 35 3 10±.5 7 2 4 1 3 3.75 ø1.5 +.2 -0 3.5 PCB mounting holes 35 Dimensions (mm) Specifications: • Type: linear taper with white indicator • Total resistance: 1KΩ~1MΩ


    Original     		PDF TW-700136 312-319BF-Value 250VDC 300VAC 250gf 5kg/60sec. 100k Linear slide Potentiometer 700-136

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    interposing CT

    Abstract: slce capacitor interposing relay interposing 1mdu04007-en RXSGA 016-BEN interposing CT, technical 1MRK 514 001-BEN calculation of transformer differential relay setting
    Text: Multi-purpose percentage restraint differential protection RADSC 1MRK 509 016-BEN Page 1 Issued June 2002 Changed since June 1999 Data subject to change without notice SE970169 Features • Complete phase and earth fault protection for generators, motors, reactors, cables or


    Original     		PDF 016-BEN SE970169) 1MDU09023-EN 1MDU04007-EN 002-BEN 015-BEN 001-BEN 003-BEN interposing CT slce capacitor interposing relay interposing 1mdu04007-en RXSGA 016-BEN interposing CT, technical 1MRK 514 001-BEN calculation of transformer differential relay setting

    1n4740 MOTOROLA

    Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
    Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y 1n4740 MOTOROLA 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740

    Untitled

    Abstract: No abstract text available
    Text: 1 111111111111111 11111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB11CDEDFD1C111 111111111 1 11111111 1 11 D14F 123314567891A758BCD814E1F3D167D1F1C5A36 DE11D16A99  !"#$%&16A991' 4*+1(C1,FF1!"#1DDEDC


    Original     		PDF 23456789AB11CDEDF C1111111111 123314567891A758BCD814E1F3 167D1 D16A99 16A99 23456789AB1 D68D71456781A75 8D91D69E1 5718D

    OUTCCIEXT-C0000

    Abstract: CCI000C0M000 backshell STRAIGHT CCI000D0F006 cci 2001 OUT0405-0148AS OUTCCIEXT-D0000 24-34F Connecteurs 84
    Text: Division Connecteurs Industriels Gamme / Series CCI-CMI • Connecteur de commande version plastique ou métallique / Control connector, plastic or metallic version ■ Encombrement réduit / Compact dimension ■ Cablage simple et rapide / Easy and quick wiring


    Original     		PDF

    M430F1232

    Abstract: rtd pt-100 amplifier circuit bel 187 transistor npn pnp transistor data sheet bel 188 pt100 temperature sensor schematic msp430 pt100 temperature sensor schematic bel 187 NPN TRANSISTOR 43a Hall Effect Magnetic Sensors circuit diagram of wireless door lock system amplifier 5.1 surrounding system circuit diagram
    Text: TEAM LRN Analog and Digital Circuits for Electronic Control System Applications TEAM LRN Analog and Digital Circuits for Electronic Control System Applications Using the TI MSP430 Microcontroller by Jerry Luecke AMSTERDAM • BOSTON • HEIDELBERG • LONDON


    Original     		PDF MSP430 M430F1232 rtd pt-100 amplifier circuit bel 187 transistor npn pnp transistor data sheet bel 188 pt100 temperature sensor schematic msp430 pt100 temperature sensor schematic bel 187 NPN TRANSISTOR 43a Hall Effect Magnetic Sensors circuit diagram of wireless door lock system amplifier 5.1 surrounding system circuit diagram

    MRF140

    Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
    Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips


    Original     		PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF140 mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546

    Untitled

    Abstract: No abstract text available
    Text: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0£2max) • M PAK package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF HVM132WK ADE-208-319B HVM132WK SC-59A

    Untitled

    Abstract: No abstract text available
    Text: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF HVM132WK ADE-208-319B HVM132WK SC-59A

    tr 13001

    Abstract: 13001 H si 13001 n50X 1STD-8831 U3D41 13001 si id ST 13001 T flip flop IC curcuit 1N3064
    Text: MIL-M- 38510/ 319B 4 March 1985_ _ M I L - M - 3 8 5 1 0 / 3 1 9A 22 J u l y 1982 MI L I TARY SPECI FI CATI ON MI CROCI RCUI TS, D I G I T A L , LOW POWER SCHOTTKY T T L , 4 - B Y - 4 REGISTER F I L E , CASCADABLE, MONOLI TH I C SI LI CON This s p e c ific a tio n is


    OCR Scan     		PDF MIL-M-38510/319B MIL-M-38510/319A MIL-M-38510. MIL-M-38510/319B tr 13001 13001 H si 13001 n50X 1STD-8831 U3D41 13001 si id ST 13001 T flip flop IC curcuit 1N3064

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    2865002402

    Abstract: 6435 fet MRF136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.


    OCR Scan     		PDF RF136 RF136Y MRF136 MRF136Y AN215A DL110 2865002402 6435 fet

    Untitled

    Abstract: No abstract text available
    Text: REV. CHARACTER DETAIL P /N LCM-X STANDARD S HIGH TEMP. H 3 ,5 5 DESCRIPTION SR STN, REFLECTIVE SF STN, TRANSFLECTIVE W/ BACKLIGHT TR TN, REFLECTIVE TF TN, TRANSFLECTIVE(W/ BACKLIGHT) LCM—X 0 1 6 0 2 D X X / C A E.C.N. #1OBRDR. & REDRAWN. DATE 1G- 2 - 9 8


    OCR Scan     		PDF LCM-X01602DXX/C 10BRDR. 1G-2-98 F0RNAT10N 7-31-9B

    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


    OCR Scan     		PDF

    KU616

    Abstract: No abstract text available
    Text: QUICK REFERENCE GUIDE FREQ U EN CY RANGE G H z M O D EL NO. PAGE N O. C o a x ia l to W a v e g u id e A d a p te rs - T y p e N 1.12-1.70 1.70-2.60 2 .60-3.95 3 .95-5.95 5.30-8.20 7.0 5 -1 0.0 8.2 0 -1 2.4 8.2 0 -1 2.4 12.4-18.0 D(L) D/E (US) E/F (S) F/G (C)


    OCR Scan     		PDF 4608B V4607 V297B 319B80 V387B KU616

    razfe recloser

    Abstract: TT214 BROWN BOVERI Relay manual 220V 17A Relay RAZOG Brown Boveri itl 12-1 BROWN BOVERI DISTANCE RELAYS BROWN BOVERI AUXILIARY RELAY RXIDF 2H asea RK 216
    Text: A » m m 1 » Info-No. » INFORMATION RK 851-304 E ASEA B R O W N BOVERI From/Date Reg. ABB Relays ^ R’ December 1982 5651 Edition 1 Page 1 R eplaces C atalo gue RK 85-18 E RECLOSING RELAY TYPE RAAAF Two delayed th re e -p h a se reclosing a t te m p t s


    OCR Scan     		PDF 277-DB 017-DB razfe recloser TT214 BROWN BOVERI Relay manual 220V 17A Relay RAZOG Brown Boveri itl 12-1 BROWN BOVERI DISTANCE RELAYS BROWN BOVERI AUXILIARY RELAY RXIDF 2H asea RK 216

    automatic phase selector circuit diagram

    Abstract: RAZOA M114A RAZOG schematic diagram ac circuit breaker AUTOMATIC PHASE SELECTOR for three phase BROWN BOVERI Relay manual introduction of automatic phase selector distance relay BROWN BOVERI DISTANCE RELAYS
    Text: Info-No. A llll asea b ro w n b o v e r , A nn n i ABB Relays INFORMATION From/Date RFR, May 1983 Edition 1 RK 851-306E Reg. 5651 RECLOSING RELAY TYPE RAAAN Two delayed reclosing attem pts. First a tte m p t selectable single or three-phase, second a tte m p t three-phase.


    OCR Scan     		PDF 851-306E S-721 851-306E 10119B-101 7B-10I MWAI05 automatic phase selector circuit diagram RAZOA M114A RAZOG schematic diagram ac circuit breaker AUTOMATIC PHASE SELECTOR for three phase BROWN BOVERI Relay manual introduction of automatic phase selector distance relay BROWN BOVERI DISTANCE RELAYS

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF