toshiba MLC nand flash
Abstract: Toshiba MLC flash TLCS-900 TMP92CF29AFG BMC92CF29F0A-G LQFP176-P-2020-0
Text: August 2010 TLCS-900 Family TLCS-900/H1 Series 32-bit / 176-pin TMP92CF29AFG High-speed advanced 32-bit microcontroller with large capacity RAM and color LCD controller capable of operating at 80MHz Features TLCS-900/H1 CPU Core Internal supply voltage Internal = 1.4 to 1.6 V
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TLCS-900
TLCS-900/H1
32-bit
176-pin
TMP92CF29AFG
80MHz
10-bit
toshiba MLC nand flash
Toshiba MLC flash
TMP92CF29AFG
BMC92CF29F0A-G
LQFP176-P-2020-0
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Z86233
Abstract: Z86243 P35-P34 p26 28 PLCC pin configuration
Text: Z86233/243 CP96DZ81201 CUSTOMER P ROCUREMENT S PECIFICA TION Z86233/243 CMOS Z8 8K ROM CONSUMER CONTROLLER PROCESSOR FEATURES Part ROM RAM Kbytes bytes Z86233 8 Z86243 8 237 236 Package Information I/O 24 32 28-pinDIP,SOIC,PLCC 40-pin DIP, 44-pin PLCC, 44-pin QFP
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Z86233/243
CP96DZ81201
Z86233
Z86243
28-pinDIP
40-pin
44-pin
P35-P34
p26 28
PLCC pin configuration
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D1992
Abstract: jeida dram 88 pin
Text: MT8D88C25B32 256K x 32, 512K x 16 IC D R A M CARD I^ IC R D N IC DRAM CARD 1 MEGABYTE 256K x 32, 512K x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN# SYM BOL PIN# SYM BOL PIN# SYM B O L 1 Vss 31
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MT8D88C25B32
88-pin
MTBDBBC25632
D1992
jeida dram 88 pin
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Untitled
Abstract: No abstract text available
Text: AK6321024W/AK6321024Z 1 Meg x 32 SRAM Module MICROCIRCUIT COEÎORATION DESCRIPTION Front View 72-Pin SIM The Accutek AK6321024 SRAM Module consists of fast high per formance SRAMs mounted on a low profile, 72 pin SIM or ZIP Board. The module utilizes four 32 pin 1 Meg x 4 SRAMs in SOJ
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AK6321024
AK6321024W-25
AK6321024Z-20
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Ah 55l
Abstract: No abstract text available
Text: SONY CXK584000TM/YM/M/P|^C7oll0ioll 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word CXK584000TM CXK584000YM 32 pin TSOP Plastic 32 pin TSOP (Plastic) CXK584000M
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CXK584000TM/YM/M/P|
524288-word
CXK584000TM/YM/M/P
CXK584000M
CXK584000TM/YM/M/P-55L/55LL
CXK584000TM/YM/M/P-70L/70LL
CXK584000TM/YM/M/P-10L/1OLL
-55L/70L/10L
Ah 55l
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P0820A
Abstract: No abstract text available
Text: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)
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CXK581000ATM/AYM/AM/AP
-55SL/70SL/1OSL
131072-word
131072-words
-55LL755SL
-70LL770SL
-10LL710SL
P0820A
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Untitled
Abstract: No abstract text available
Text: SO NY CXK581OOOATM/AYM/AM/AP -70LLX/10LLX 131,072-word x 8-bit High-Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM/AP are high speed CMOS static RAMs organized as 131,072-words-by-8bits. CXK581000ATM CXK581OOOAYM 32-pin TSOP Plastic 32-pin TSOP (Plastic)
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CXK581OOOATM/AYM/AM/AP
-70LLX/10LLX
072-word
CXK581
072-words-by-8bits.
-70LLX
-10LLX
100ns
CXK581000AM
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LG VARIABLE FREQUENCY DRIVE is3
Abstract: No abstract text available
Text: intèi PRELIMINARY 80960JA/JF EMBEDDED 32-BIT MICROPROCESSOR Pin/Cdde Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Load/Store Programming Model — Sixteen 32-Bit Global Registers — Sixteen 32-Bit Local Registers 8 sets
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80960Jx
32-Bit
80960JA
80960JF-4
80960JA-1
80960JF
80960JA/JF
80960JA/JF
LG VARIABLE FREQUENCY DRIVE is3
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Untitled
Abstract: No abstract text available
Text: CXK582000TM/YM/M SONY -8 5 L L /1 0 L L 262,144-word x 8-bit High-Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high-speed CMOS CXK582000TM CXK582000YM 32-pin TSOP Plastic 32-pin TSOP (Plastic) static RAM organized as 262,144-words-by-8-bits.
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CXK582000TM/YM/M
144-word
CXK582000TM/YM/M
144-words-by-8-bits.
-85LL
-10LL
100ns
CXK582000M
32-pin
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E9442
Abstract: 39A118 CXK581000AM CXK581000ATM CXK581000AYM P0820
Text: SO NY CXK581000ATM/AYM/AM/AP -70LLX/10LLX 131,072-word x 8-bit High-Speed CMOS Static RAM Description The C X K 581000A TM /AY M /A M /A P are high speed CMOS static RAMs organized as 131,072-words-by-8- CXK581000ATM CXK581000AYM 32-pin TSOP Plastic 32-pin TSOP (Plastic)
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CXK581000ATM/AYM/AM/AP-7ollx
072-word
CXK581000ATM/AYM/AM/AP
072-words-by-8-bits.
CXK581OOOATM/AYM/AM/AP
-70LLX
100ns
32-P-0820-B
CXK581000AM
E9442
39A118
CXK581000ATM
CXK581000AYM
P0820
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Untitled
Abstract: No abstract text available
Text: TMS34020, TMS34020A GRAPHICS PROCESSORS SPVS004D - MARCH 1990 - REVISED NOVEMBER 1993 * Instruction Cycle Time - 100 ns . . . TMS34020A-40 - 1 2 5 n s . . .TMS34020-32 - 125 n s . . . TMS34020A-32 145-PIN GB PACKAGE TOP VIEW A B C D E F G H J • Fully Programmable 32-Bit
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TMS34020,
TMS34020A
SPVS004D
TMS34020A-40
TMS34020-32
TMS34020A-32
145-PIN
5bl72E
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.
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HYM532100A
32-bit
HY514400A
22/iF
HYM5321OOAM/ALM
HYM532100AMG/ALMG
1CC03-00-M
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM532256 Series 256KX 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532256 Is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2 /iF decoupling capacitor is mounted for each DRAM.
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HYM532256
256KX
32-bit
HY534256
HYM532256M
HYM532256MG
80ns------
1CA01-20-MAY93
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Untitled
Abstract: No abstract text available
Text: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,
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MT8D132
MT16D232
72-pin,
824mW
024-cycle
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MT16C
Abstract: No abstract text available
Text: ADVANCE M 1 ir n n M .“ L:? MTSLD432X S r MT16LD832 X(S) 4- MEG, a MEG x 32 DRAM MODULE DRAM • a ^ i l l 4 MEG, 8 MEG x 32 ^ 16, 32 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH IVIUUULt FEATURES • New proposed JEDEC-standard pinout in a 72-pin
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MTSLD432X
MT16LD832
72-pin
200mW
048-cycle
128ms
maxiMT16U5832
MT8LD432
72-Pin
MT16C
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mt8088
Abstract: MT808 jeida dram 88 pin T8D8
Text: PRELIMINARY M I i n n n M M T8D88C432V 4 M E G x 32. 8 M E G x 16 1C D R A M C A R D 1C DRAM CARD 16 MEGABYTES 4 MEG x 32, 8 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-3) OPTIONS PIN* 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
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MT8D88C432V
88-pin
256ms
mt8088
MT808
jeida dram 88 pin
T8D8
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MAS 560 ag
Abstract: MT8LDT132 T432
Text: ADVANCE M ir S n M M T8LDT132 S , IUiT8LOT432(S) 1 M E G X 32, 4>M E G x 3 2 D R A M M O D U L E SMALL-OUTLINE _ DRAM MODULE 1 meg x 3 2 ,4 meg x 32 4, 16 MEGABYTE, 3.3V, EXTENDED REFRESH, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 72-pin, small-outline,
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T8LDT132
IUiT8LOT432
72-pin,
000mW
024-cycle
128ms
72-Pin
32ISK
GD11M
MAS 560 ag
MT8LDT132
T432
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Untitled
Abstract: No abstract text available
Text: MD321OOOFKX-00/10/12 Issue 1.0: October 1989 1M x 32 CMOS DRAM Module MD321000FKX IsSi.H ' O ijQ O H' 1 9HÍ - ; ADVANCE PRODUCT NFORMATION 1,048,576 x 32 CMOS High Speed Dynamic RAM Features Pin Definition V Row Access Times of 80/100/120 ns Onboard Address Latching
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MD321OOOFKX-00/10/12
MD321000FKX
rAD22
AD0-AD31
MemWr62
ADO-31
MD321000FKX-80/W/12
MD321000FKX
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LD23Z X S 2 MEG X 32 DRAM MODULE 2 MEG X 32 DRAM DRAM MODULE 8 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • New proposed JEDEC-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process
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MT4LD23Z
72-pin
800mW
048-cycle
128ms
MT4LD232
72-Pin
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Untitled
Abstract: No abstract text available
Text: JU l j f, '543 SM5322000TP 8MByte 2M x 32 CMOS DRAM M odule- Thin Profile General Description Features • ■ ■ The SM5322000TP is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 32 bits, in a 72-pin, leadless, single-in-line memory module (SIMM)
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SM5322000TP
SM5322000TP
72-pin,
22/tf
70/80/100ns
70/80/100ns)
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Untitled
Abstract: No abstract text available
Text: GMM7324210CNS/SG-6/7/8 LG Semicon Co.,Ltd. 4,194,304 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Features Description The GMM7324210CNS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on single
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GMM7324210CNS/SG-6/7/8
GMM7324210CNS/SG
GMM7324210CNS/SG
GMM732421OCNS
GMM73242only
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VG46VS8325
Abstract: ic 3645 sh xaxs
Text: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)
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VG46VS8325
100/83MHz
32-bit
cycles/16ms
100-pin
1G5-0057
IG5-0057
ic 3645 sh
xaxs
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Untitled
Abstract: No abstract text available
Text: 64K X 32 BiCMOS/CMOS STATIC RAM MODULE IDT7MP4036 Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High density 2 megabit static RAM module • Low profile 64 pin ZIP Zig-zag In-line vertical Package or 64 pin S IM M (Single In-line Memory Module)
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IDT7MP4036
IDT7MP4036
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MT80132
Abstract: No abstract text available
Text: lU lir - C in f M I iit - n u iM MT8DT32; MT16D232 1 MEG, 2 MEG x 32 DRAM MODULE DRAM 1 MEG, 2 MEG x 32 m A r v i i i r 4, 8 m e g a b y t e s , sv f a s t p a g e OPTIONAL EXTENDED REFRESH M \J U U L t FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin,
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MT8DT32;
MT16D232
72-pin,
824mW
CYCLE24
MT80132.
MT16023S
bill541
MT8D132r
MT80132
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