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    328 MOS TIME DELAY RELAY Search Results

    328 MOS TIME DELAY RELAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    328 MOS TIME DELAY RELAY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 10a 400v

    Abstract: HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50
    Text: HGTP10N40F1D, HGTP10N50F1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR


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    HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. 150oC 100oC -50oC diode 10a 400v HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50 PDF

    diode 10a 400v

    Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
    Text: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance


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    HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. diode 10a 400v 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1 PDF

    g7N60C3D

    Abstract: G7N60 G7N60C3 C 679 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = 25oC • • • • • EMITTER COLLECTOR GATE


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    HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D g7N60C3D G7N60 G7N60C3 C 679 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121 g7n60c PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 PDF

    toshiba satellite a300

    Abstract: wiring diagram dol motor starter OMRON LY2N 24VDC M1B N SMD TRANSISTOR omron Communication cables pin diagram MY2N 24VDC, IEC255 xs schneider kyosan 726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS dol starter
    Text: Table of Contents General Purpose Relay . 6 General-purpose Relay G2RS . 6


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    JB301-E3-01 toshiba satellite a300 wiring diagram dol motor starter OMRON LY2N 24VDC M1B N SMD TRANSISTOR omron Communication cables pin diagram MY2N 24VDC, IEC255 xs schneider kyosan 726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS dol starter PDF

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


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    PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent PDF

    omron g5lb -1-25

    Abstract: sy202 EY3A-3051 EY3A-308 Omron Cross Reference ee-sx1137 nano technology sx4019 G3VM-401A G3VM-61GR1
    Text: Design Tomorrow’s Break-Through Products. . . Partner with a Global Technology Leader Work with a Dynamic Partner With over 70 years of experience, Omron continues to apply the latest technologies to offer you more innovative and more efficient control component


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    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358 PDF

    tdfp11

    Abstract: ADE-702-230 HD6417720 SH7700 SH7720 STR 6653 G3B4 DZ 120-5 Dynamic Controls Nippon capacitors T1A12
    Text: REJ09B0033-0100Z 32 SH7720 Hardware Manual SuperH TM Renesas 32-Bit RISC Microcomputer RISC engine Family / SH7700 Series SH7720 Rev.1.00 Revision date: Jul. 28, 2004 HD6417720 Rev. 1.00, 07/04, page ii of lvi Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and


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    REJ09B0033-0100Z SH7720 32-Bit SH7700 HD6417720 D-85622 tdfp11 ADE-702-230 HD6417720 SH7720 STR 6653 G3B4 DZ 120-5 Dynamic Controls Nippon capacitors T1A12 PDF

    tdfp11

    Abstract: tea 1402 ul 1203 compound REJ09B0317 HD6417720 R8A77210 SH7720 SH7721 ir receiver 38Khz and 56Khz SH7320
    Text: The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7720 Group, SH7721 Group User's Manual: Hardware


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    SH7720 SH7721 32-Bit Family/SH7700 HD6417720 HD6417320 R8A77210 R8A77211 tdfp11 tea 1402 ul 1203 compound REJ09B0317 HD6417720 R8A77210 ir receiver 38Khz and 56Khz SH7320 PDF

    328 mos time delay relay

    Abstract: No abstract text available
    Text: DS3668 National Semiconductor DS3668 Quad Fault Protected Peripheral Driver General Description Applications The DS3668 quad peripheral driver is designed for those applications where low operating power, high breakdown voltage, high output current and low output ON voltage are


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    DS3668 DS3668 ti5D1124 TL/F/5225-2 TL/F/5225-4 bS011E4 328 mos time delay relay PDF

    10N40F1D

    Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
    Text: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS


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    HGTP10N40F1D, HGTP10N50F1D O-220AB HGTP10N50F1D 00A/U9 10N40F1D 10N50F1D GE 639 transistor 10n50 10N50F1 GEP diode RN2512 PDF

    tp3055

    Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
    Text: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    MTP3055E TP3055EFI MTP3055EFI O-220 ISOWATT220 ISQWATT220 MTP3055E/FI tp3055 MTP3055EFI TP3055E TP3055EFI PDF

    3614

    Abstract: No abstract text available
    Text: DS3611/3612/3613/3614-N.T DESCRIPTION PIN CONFIGURATIONS T T h e DS3611 series o f dual p e riphe ral d rivers was designed fo r a p p lic a tio n s w here h ig h e r breakdow n volta ge is re q u ire d than th a t provided by th e 75451 series. P A C K A G E


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    DS3611/3612/3613/3614-N DS3611 3611T current--300mA/drl 200mA DS3612 DS3613 DS3614 3614 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN55461 THRU SN55463 SN75461 THRU SN75463 DUAL PERIPHERAL DRIVERS S LR S 02 2 A -D E C E M B E R 1976 - REVISED O CTO BER 1995 • ■ I I I PERIPHERAL DRIVERS FOR HIGH-VOLTAGE, HIGH-CURRENT DRIVER APPLICATIONS SN55461, SN55462, SN55463 . . . JG PACKAGE SN75461, SN75462, SN75463 . . . D OR P PACKAGE


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    SN55461 SN55463 SN75461 SN75463 SN55461, SN55462, SN75461, SN75462, PDF

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


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    7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor PDF

    diode lt 8220

    Abstract: diode LT 8233 Monsanto segment display lt 8242 6e2 tube Signetics NE561B Signetics NE561 R/diode lt 8232 lt 8232
    Text: Copyright 1974 SIGNETICS CORPORATION Signetics C o rp o ra tio n reserves th e rig h t to m ake changes in th e pro d u c ts contained in th is b o o k in order to im prove design o r perform ance and to supp ly the best possible p ro d u c t. Signetics C o rp o ra tio n assumes no re sp o n s ib ility fo r the use o f any c irc u its described herein and


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    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    4 bit bcd adder using ic 7483

    Abstract: diode lt 8220 8T18+signetics
    Text: C op yrig h t 1 9 7 4 SIGNETICS CORPORATION Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product. Signetics Corporation assumes no responsibility fo r the use o f any circuits described herein and


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    proton rx 4000 watts power amplifier circuit diagram

    Abstract: RCA-CD401 cd22014 ICAN-6362 vogt 545 44 vogt inductor j9 570 17 013 20 RCA-CD4046B common cathode 7 SEGMENT DISPLAY LT 543 CD22014E CD22011
    Text: RCA COS/MOS Integrated Circuits This DATABOOK contains complete technical information on RCA stand­ ard commercial COS/MOS integrated circuits. It covers the full line of RCA standard A- and B-series digital logic circuits, special-function circuits crosspoint switches and level shifters ,


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    132nd WA98121. proton rx 4000 watts power amplifier circuit diagram RCA-CD401 cd22014 ICAN-6362 vogt 545 44 vogt inductor j9 570 17 013 20 RCA-CD4046B common cathode 7 SEGMENT DISPLAY LT 543 CD22014E CD22011 PDF

    MM4220DF/MM5220DF

    Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
    Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.


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    360746lat MM4220DF/MM5220DF mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061 PDF

    EQUIVALENT TIC 160D

    Abstract: MHI-002 MM5311 equivalent transistor bf 175 LM5522 DM7441A lm1514 LH0032
    Text: m Edge Index by Product Family Here is the new INTERFACE catalog from National Semiconductor Corporation. It contains complete information on all of National's INTERFACE products whether they be Linear, Digital, or MOS. It is the first such catalog in the industry and we hope it becomes your most im portant INTERFACE guide.


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    40664 SCR

    Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
    Text: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.


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    -500B CR316 CR317 CR322 CR323 40664 SCR CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR PDF

    POWER MODULE SVI 3101 D

    Abstract: bc power module svi 3101 d SVI 3206 SVI 3101 POWER MODULE SVI 3101 temperature digital display JUMO Lan M UAA 1004 DP tda 8210 INTERFACING OUTPUT DISPLAYS 8212 TDA 9394
    Text: \ V* %%ŸÎ\ \ k A. ' In December 1973 Intel shipped the first 8-bit, N-channel microprocessor, the 8080. Since then it has become the most widely usea microprocessor in the industry. Applications of the 8080 span from large, intelligent systems terminals to decompression computers for deep sea divers.


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