FUSE fast
Abstract: PKT 4113
Text: AUTOMATIONWORX User Manual UM EN ILC 330/350 Order No.: 2699370 Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M and ILC 350 PN Inline Controllers AUTOMATIONWORX User Manual Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M
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TRANSISTOR W2
Abstract: PRSS0004ZG-A PRSP0014DE-B PRSS0004ZD-C HSOP-11 DPak Package Renesas
Text: Unit:mm Reel type A Ｂ Ｃ A 330 330 330 P1 8 8.0 8.0 A0 6.9 6.8 6.5 N 100 100 74-81 W1 16.4 17.4 17-19 W2 22.4 21.4 21-23 16-mm width emboss taping Taping code Package name W202-104-XX MP-3A Z1575F, 76F EMBOSS DPAK S HSOP-11 Renesas code Previous code PRSS0004ZG-A TMP3
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16-mm
W202-104-XX
Z1575F,
HSOP-11
PRSS0004ZG-A
PRSS0004ZD-C
PRSP0014DE-B
FP-11DTV
TRANSISTOR W2
HSOP-11
DPak Package Renesas
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23P transistor sot 23
Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d
Text: Unit:mm Reel type A B Ｃ Ｄ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code
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12-mm
G300721H02
MTE1208G-8P2S-A
MTE1208H-8P2J
OT-89
PLZZ0004CB-A
PRSP0008DA-B
PTSP0008JA-A
TSOT89
TE1208-5P,
23P transistor sot 23
PTZZ0005DA-A
PWSN0008DD-A
electrical symbol
PRSP0008DD-D
PRSP0008DA-B
PRSP0008DD-A
G300721H02
TSSOP-8 8d
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Untitled
Abstract: No abstract text available
Text: H Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300␣MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN diodes with 0 to 5-volts DC
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AGC-330
300MHz
AGC-330
5963-3279E
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RA30H3340M
Abstract: RA30H3340M-01 RA30H3340M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA30H3340M
330-400MHz
RA30H3340M
30-watt
400-MHz
RA30H3340M-01
RA30H3340M-E01
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C67078-S3105-A2
Abstract: No abstract text available
Text: BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 330 500 V 9.5 A 0.6 Ω TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3105-A2
C67078-S3105-A2
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C67078-S3105-A2
Abstract: No abstract text available
Text: BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 330 500 V 9.5 A 0.6 Ω TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3105-A2
C67078-S3105-A2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz
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RA07M3340M
330-400MHz
RA07M3340M
400-MHz
3VAL10
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hatfield attenuator
Abstract: RF MOSFET MODULE RA07H3340M RA07H3340M-01 RA07H3340M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to
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RA07H3340M
330-400MHz
RA07H3340M
400-MHz
hatfield attenuator
RF MOSFET MODULE
RA07H3340M-01
RA07H3340M-E01
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TRANSISTOR 1300
Abstract: L-Band 1200-1400 MHz RT 6010.5 LM 1214-370M 1200 - 1400 MHz, L-Band Applications
Text: 1214-370MR4 1214 – 370M . 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to
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1214-370MR4
1214-370M
25oC1
1214-370M
TRANSISTOR 1300
L-Band 1200-1400 MHz
RT 6010.5 LM
1200 - 1400 MHz, L-Band Applications
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RA07N3340M
Abstract: RA07N3340M-01 RA07N3340M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz
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RA07N3340M
330-400MHz
RA07N3340M
400-MHz
RA07N3340M-01
RA07N3340M-E01
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hatfield attenuator
Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz
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RA13H3340M
330-400MHz
RA13H3340M
13-watt
400-MHz
hatfield attenuator
RF MOSFET MODULE
RA13H3340M-01
RA13H3340M-E01
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1214-110
Abstract: 1214-110M
Text: 1214-110M 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed
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1214-110M
1214-110M
1214-110
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RA55H3340M-101
Abstract: RA55H3340M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA55H3340M
330-400MHz
RA55H3340M
55-watt
400-MHz
RA55H3340M-101
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IRFP 740
Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6
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MTP3N60
MTH6N60
MTP6N60
IRFP 740
IRF 810
IRF 426
irf transistors
irfp 730
BUZ 82
Diodes BUZ C 840
irf 840
Diodes BUZ 840
BU 102
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irfp 950
Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6
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SGS35MA050D1
TSD4M450V
MTP3N60
MTP3N60FI
MTH6N60FI
MTP6N60
STHV82
STHV102
TSD5MG40V
STHI07N50FI
irfp 950
SGSP479
transistor BUZ45
SGSP369
BUZ74
IRFP 740
IRF 950
SGSP239
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IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
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mpsa42 "sot23"
Abstract: MPSA42 sot-223 siemens bfp22
Text: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN
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BC847S
BC847PN
BC857S
OT363
OT363
OT223
mpsa42 "sot23"
MPSA42 sot-223
siemens bfp22
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Vbs 500 V hi 9.5 A % S on Package Ordering Code 0.6 n TO-218AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-218AA
C67078-S3105-A2
O-218AA
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Untitled
Abstract: No abstract text available
Text: Wfiol mL/ÎMHEWLETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN
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AGC-330
AGC-330
44475S4
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Yds 500 V k> ^DS on Package Ordering Code 9.5 A 0.6 n TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-218
C67078-S3105-A2
235bG5
O-218AA
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HXTR-2001
Abstract: S21E 210SC
Text: COMPONENTS GENERAL PURPOSE TRANSISTOR CHIP Features HXTR-2001 CIRCUITS H E W L E T T ^ PACKARD 330 0.013 TYP. - HIGH OUTPUT POWER 20.0 dBm PidB Typical at 2 GHz LOW NOISE FIGURE 3.8 dB Typical at 4 GHz ' 90 (0.0035) 330 (0.013) FOR HYBRID . 1 . . WIDE DYNAMIC RANGE
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HXTR-2001
HXTR-2001
S21E
210SC
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AGC-330
Abstract: No abstract text available
Text: whn 1"KM H Ew LETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 com bines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN
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AGC-330
AGC-330
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buz33
Abstract: BUZ 60A
Text: SIEMENS SIPMOS Power Transistor BUZ 330 • N channel • Enhancement mode • Avalanche rated Type v DS lo Tc ^DS on Package 1> Ordering Code BUZ 330 500 V 9.5 A 28 ’C 0.6 Í2 TO-218 AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3105-A2
5IL03756
BUZ33°
buz33
BUZ 60A
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