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Cornell Dubilier Electronics Inc 333MMR400K CAP FILM 0.033UF 10% 400VDC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	333MMR400K	Bulk	27,437		1	1 $0.46 10 $0.272 100 $0.1746 1000 $0.12317 10000 $0.10231	Buy Now
Mouser Electronics	333MMR400K		6,233			1 $0.44 10 $0.187 100 $0.128 1000 $0.114 10000 $0.089	Buy Now
Verical	333MMR400K		14,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
Cornell Dubilier Electronics Inc 333MMR630K CAP FILM 0.033UF 10% 630VDC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	333MMR630K	Bulk	11,748		1	1 $0.56 10 $0.336 100 $0.2183 1000 $0.15597 10000 $0.13066	Buy Now
Mouser Electronics	333MMR630K		4,005			1 $0.52 10 $0.247 100 $0.219 1000 $0.149 10000 $0.129	Buy Now
Verical	333MMR630K		7,901		582	1 - 10 - 100 - 1000 $0.1257 10000 $0.1187	Buy Now
	333MMR630K		2,000		61	1 - 10 - 100 $0.0979 1000 $0.0979 10000 $0.0979	Buy Now
	333MMR630K		2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.0979	Buy Now
Arrow Electronics	333MMR630K		2,000	18 Weeks	1	1 $0.0979 10 $0.0979 100 $0.0979 1000 $0.0979 10000 $0.0979	Buy Now
Newark	333MMR630K	Bulk	7,936		1	1 $0.086 10 $0.086 100 $0.086 1000 $0.086 10000 $0.086	Buy Now

TTI	333MMR630K	Bulk	17,000		500	1 - 10 - 100 - 1000 $0.148 10000 $0.124	Buy Now
Cornell Dubilier Electronics Inc 333MMR250K CAP FILM 0.033UF 10% 250VDC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	333MMR250K	Bulk	744		1	1 $0.52 10 $0.311 100 $0.2009 1000 $0.1428 10000 $0.11923	Buy Now
Mouser Electronics	333MMR250K					1 - 10 - 100 - 1000 - 10000 -	Get Quote
3M Interconnect 233-3MMX55M TAPE MASKING GREEN 0.12"X60YDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	233-3MMX55M	Bulk	12		1	1 $8.61 10 $6.509 100 $5.4174 1000 $4.19007 10000 $3.96691	Buy Now
Kyocera AVX Components KGM21NR71H333MM CAP CER 0.033UF 50V X7R 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KGM21NR71H333MM	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	KGM21NR71H333MM					1 $0.12 10 $0.081 100 $0.041 1000 $0.026 10000 $0.02	Get Quote
TME	KGM21NR71H333MM				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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333MM Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
333MMR250K	Illinois Capacitor	Capacitors - Film Capacitors - CAP FILM 0.033UF 10% 250VDC RAD	Original	PDF
333MMR400K	Illinois Capacitor	Capacitors - Film Capacitors - CAP FILM 0.033UF 10% 400VDC RAD	Original	PDF
333MMR630K	Illinois Capacitor	Capacitors - Film Capacitors - CAP FILM 0.033UF 10% 630VDC RAD	Original	PDF

333MM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
fairchild MLP8 Abstract: max 232 8-soic Text: High-Speed, Low-Side Gate Drivers Fairchild’s Offering The FAN3000 series low-side gate drivers offer an unequaled combination of higher performance, smaller size, and more input options for driving N-channel power MOSFETs and IGBTs: • Industry’s smallest packages 232 and 333mm MLP	Original	FAN3000 333mm fairchild MLP8 max 232 8-soic	PDF
Untitled Abstract: No abstract text available Text: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +105°C Small Size Epoxy Dipped Radial Lead Metallized Polyester Capacitors Part Number: 333MMR400K This part is RoHS compliant Electrical Specifications Capacitance: 0.033uF	Original	333MMR400K 033uF	PDF
MPSA65 Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*	Original	MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor	PDF
Si4450DY Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z	PDF
2502P Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	SI6926DQ 2502P CBHK741B019 F63TNR FDW2502P SI6926DQ	PDF
SI9955DY Abstract: fairchild NDS 1182 Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si9955DY fairchild NDS 1182	PDF
transistor 2N5461 Abstract: No abstract text available Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.	Original	2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461	PDF
FDS9953A Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive	Original	FDS9953A FDS9953A 9953A CBVK741B019 F011 F63TNR F852 L86Z	PDF
FDC6331L Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where	Original	FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR	PDF
FDW2501NZ Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	FDW2501NZ FDW2501NZ 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P	PDF
2506p Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	FDW2506P 2506p diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P	PDF
D 1437 transistor Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16 Text: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms	Original	SOIC-16 330cm D 1437 transistor CBVK741B019 F63TNR L86Z NDM3000 NDM3001	PDF
F63TNR Abstract: FDFS2P102A soic-8 33a Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.	Original	FDFS2P102A F63TNR FDFS2P102A soic-8 33a	PDF
diode sod123 W1 Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2 Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated	Original	OD-123 OD123 177cm 330cm diode sod123 W1 CBVK741B019 F63TNR MMSZ5221B sod123 E2	PDF

rf transistor mark code H1 Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for	Original	MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N	PDF
SSOT-3 Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3 Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	FSB649 SSOT-3 CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3	PDF
FDS6688 Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56 Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	FDS6688 FDS6688 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56	PDF
FDS9945 Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.	Original	FDS9945 FDS9945 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.	Original	FDS3812 CBVK741B019 F011 F63TNR F852 FDS3812 FDS9953A L86Z	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	FDS6692 CBVK741B019 F011 F63TNR F852 FDS6692 FDS9953A L86Z	PDF
2502P Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains	Original	FDW2507NZ 2502P CBHK741B019 F63TNR FDW2502P FDW2507NZ	PDF
F852 transistor Abstract: F852 CBVK741B019 F63TNR PN2222A Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated	Original	OT-223 330cm 177cm F852 transistor F852 CBVK741B019 F63TNR PN2222A	PDF
Untitled Abstract: No abstract text available Text: PART NUMBER: 333MMR250K t S M ALL SIZE EPOXY DIPPED RADIAL LEAD M ETALLIZED POLYESTER CAPACITO RS Parts are RoHS com pliant Date code w hen parts became RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 0.033 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.01 Max at 1000 Hz and 25°C	OCR Scan	333MMR250K	PDF
Untitled Abstract: No abstract text available Text: PART NUMBER: 333MMR250K t GENERAL PURPOSE FILM P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 FEATURES Radial lead, self healing metallized polyester, small size ELECTRICAL SPECIFICATIONS C apacitance: 0.033 uF T ole ra n ce: -10 % . +10 %	OCR Scan	333MMR250K 125at	PDF

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333MM Search Results

333MM Price and Stock

Cornell Dubilier Electronics Inc 333MMR400K

Cornell Dubilier Electronics Inc 333MMR630K

Cornell Dubilier Electronics Inc 333MMR250K

3M Interconnect 233-3MMX55M

Kyocera AVX Components KGM21NR71H333MM

333MM Datasheets (3)

333MM Datasheets Context Search

fairchild MLP8

Untitled

MPSA65

Si4450DY

2502P

SI9955DY

transistor 2N5461

FDS9953A

FDC6331L

FDW2501NZ

2506p

D 1437 transistor

F63TNR

diode sod123 W1

rf transistor mark code H1

SSOT-3

FDS6688

FDS9945

CBVK741B019

CBVK741B019

2502P

F852 transistor

Untitled

Untitled