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    R5F61633N50FPV Renesas Electronics Corporation Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion) Visit Renesas Electronics Corporation
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    33N50 Price and Stock

    SiTime Corporation SIT1602BC-83-33N-50.000000

    MEMS OSC XO 50.0000MHZ H/LV-CMOS
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    DigiKey SIT1602BC-83-33N-50.000000 133 1
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    HUBER+SUHNER 33_N-50-0-7-133_NE

    33_N-50-0-7/133_NE
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    Vishay Sfernice RSK33N50RF50RD

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    SiTime Corporation SIT8920BM-72-33N-50.000000

    MEMS OSC XO 50.0000MHZ LVCMOS LV
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    DigiKey SIT8920BM-72-33N-50.000000 1
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    SiTime Corporation SIT8918BE-13-33N-50.000000

    MEMS OSC XO 50.0000MHZ LVCMOS LV
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    DigiKey SIT8918BE-13-33N-50.000000 1
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    33N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500


    Original     		PDF 33N50 O-264

    125OC

    Abstract: IXTK33N50
    Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data TO-264 AA Symbol Test conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous


    Original     		PDF 33N50 O-264 125OC IXTK33N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C


    Original     		PDF IXFK33N50 IXFK35N50 O-264 33N50 35N50

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    IXTK33N50

    Abstract: No abstract text available
    Text: High Current MegaMOSTMFETs IXTK 33 N50 VDSS = 500 V I D25 = 33 A RDS on = 0.17 Ω Maximum Ratings TO-264 AA N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V


    Original     		PDF O-264 struct38 IXTK33N50

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    35N50

    Abstract: NS4250 IXFK33N50 IXFK35N50
    Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C


    Original     		PDF IXFK33N50 IXFK35N50 O-264 33N50 35N50 35N50 NS4250 IXFK33N50 IXFK35N50

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs 33N50 IXFX35N50 VDSS ID25 33A 35A 500V N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr RDS on  160m  150m TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFK33N50 IXFX35N50 O-264 PLUS247TM

    IXTK33N50

    Abstract: No abstract text available
    Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V


    OCR Scan     		PDF 33N50 O-264AA 33N50 IXTK33N50

    TO-264-aa

    Abstract: No abstract text available
    Text: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C


    OCR Scan     		PDF IXFK33N50 IXFK35N50 33N50 35N50 O-264AA outlinesTO-264AAexceptL, TO-264-aa

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    264AA

    Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
    Text: HiPerFET Power MOSFETs ^D S S 33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C


    OCR Scan     		PDF IXFK33N50 IXFK35N50 to150 33N50 35N50 O-264AA 264AA SMD-264 TO264AA smd diode 513 TO-264-aa diode 253 TO-264AA

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    3CUN

    Abstract: IXTK33N45 IXTK33N50
    Text: Preliminary Data Sheet v High Current MegaMOS FET IXTK33N45 33N50 p DSS ^D25 450 V 500 V DS on 33 A 0.16 Q 33 A 0.17 Q N-Channel Enhancement Mode M axim um ra tin g s Sym bol Test c o n d itio n s VDss Tj = 25°C to 150°C v DGR Tj = 2 5 °C to 150°C; %s = 1.0 MO


    OCR Scan     		PDF IXTK33N45 IXTK33N50 33N50 33N45 33N45 O-264 3CUN IXTK33N50

    IRFP 640

    Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
    Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140


    OCR Scan     		PDF 135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    IXTK33N50

    Abstract: 33N50 IXTK33N45 P 317 diode aa 113
    Text: a ix Y S Preliminary Data Sheet V DSS High Current MegaMOS FET IXTK33N45 33N50 450 V 500 V ^D25 □ DS on 33 A 0.16 a 33 A 0.17 a N-Channel Enhancement Mode Symbol Test conditions V DSS Tj = 25°C to 150°C v DGR T.J = 25°C to 150°C;’ R GS „ = 1.0 M£i


    OCR Scan     		PDF IXTK33N45 IXTK33N50 33N50 33N45 00G4DD7 P 317 diode aa 113

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    IXTK33N50

    Abstract: No abstract text available
    Text: n ixY S High Current MegaMOS FETs 33N50 = 500 V V D SS = 33 A = 0.17 0 D 25 RD S o n N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions V DSS T j = 2 5 °C to 150°C v DGR T d = 25°C to 150°C; RGS = V GS Maximum Ratings TO-264 AA


    OCR Scan     		PDF IXTK33N50 O-264 IXTK33N50

    TO-264-aa

    Abstract: d2529
    Text: IXYS HiPerFET IXFK 35N50 V DSS Power MOSFETs I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 35 A 0.15 Q trr <250 ns Preliminary data Symbol Test Conditions Maximum Ratings V oss Tj =25°Cto150°C 500 V VDGR T, = 25° C to 150° C; RGS= 1 M£2


    OCR Scan     		PDF 35N50 Cto150 TO-264-aa d2529