Untitled
Abstract: No abstract text available
Text: Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of
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ISL8271M
ISL8271M
FN8636
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Untitled
Abstract: No abstract text available
Text: DATASHEET Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of
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ISL8271M
ISL8271M
FN8636
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Untitled
Abstract: No abstract text available
Text: Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of
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ISL8271M
ISL8271M
FN8636
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Untitled
Abstract: No abstract text available
Text: 48Vdc Input, 12Vdc@33A Output Quarter-brick Converter AVQ400-48S12B Description The AVQ400-48S12B is a single output DC/DC converter with standard quarter-brick outline and pin configuration. It delivers up to 33A output current with 12V output voltage. Above
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48Vdc
12Vdc
AVQ400-48S12B
AVQ400-48S12B
SJ/T11363-2006
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Untitled
Abstract: No abstract text available
Text: RCX330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCX330N25
105mW
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-270-06-HT Single Output Half-brick MILITARY COTS DC-DC CONVERTER 155-425V Continuous Input 155-475V Transient Input 6V Output 33A Output 88% @ 16.5A / 87% @ 33A Efficiency Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC-DC converters brings
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MCOTS-C-270-06-HT
55-425V
55-475V
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Untitled
Abstract: No abstract text available
Text: 48Vdc Input, 12Vdc@33A Output Quarter-brick Converter AVQ400-48S12-6L Description The AVQ400-48S12-6L is a single output DC-DC converter with standard quarter-brick outline and pin configuration. It delivers up to 33A output current with 12V output voltage.
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48Vdc
12Vdc
AVQ400-48S12-6L
AVQ400-48S12-6L
SJ/T11363-2006
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rcj330
Abstract: No abstract text available
Text: RCJ330N25 Nch 250V 33A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCJ330N25
105mW
SC-83)
R1102A
rcj330
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Untitled
Abstract: No abstract text available
Text: Data Sheet October 17, 2005 QBK033A0B Series Power Modules; DC-DC Converters 36-60 Vdc Input; 12Vdc Output; 33A Output Current Features High efficiency – 94.5% at 12V full load Delivers up to 33A output current Low output ripple and noise Industry standard Quarter brick:
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QBK033A0B
12Vdc
73/23/EEC
93/68/EEC
x3001
DS05-018
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RCJ330N25
Abstract: rcj330
Text: RCJ330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCJ330N25
105mW
SC-83)
R1102A
RCJ330N25
rcj330
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FDPF 33N25T
Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V
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FDP33N25
FDPF33N25
FDPF33N25
FDPF33N25T
FDPF 33N25T
33N25T
33n25
diode marking 33a on semiconductor
marking 33a on semiconductor
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200V 200A mosfet
Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
Text: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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5330A
IRGP50B60PD1PbF
O-247AC
200V 200A mosfet
IRGP50B60PD1PBF
200A 600V FET
diode marking 33A
30ETH06
MOSFET Parameters
33a marking
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Untitled
Abstract: No abstract text available
Text: PD - 95330A SMPS IGBT IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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5330A
IRGP50B60PD1PbF
O-247AC
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Untitled
Abstract: No abstract text available
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
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marking 33a on semiconductor
Abstract: 502BCOHM KEVIN
Text: SPECIFICATION FOR APPROVAL RoHS COMPLI ANT * CUSTOMER.: DESCRIPTION.: Inductor, 0.15uH, 33A, 0.28 mΩ DCR PAGE.: 1 of 4 AH2520-R15LU DATE.: 2009.04.07 ITG PART No.: 1.CONFIGURATIONS & DIMENSIONS: D B Marking F A E G C 3.5 4.0 3.0 YYWW A B C D E F G H I 6.80
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AH2520-R15LU
500KHz
marking 33a on semiconductor
502BCOHM
KEVIN
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IRGP50B60PD1PbF
Abstract: 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 diode marking 33A on
Text: SMPS IGBT PD - 95330 IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PD1PbF
App20
IRFPE30
O-247AC
IRGP50B60PD1PbF
30ETH06
IRFP250
IRFPE30
IRGP50B60PD1
diode marking 33A on
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30ETH06
Abstract: IRFP250 irfp250 applications ICE-50 IRGP50B60PD1PBF
Text: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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5330A
IRGP50B60PD1PbF
O-247AC
30ETH06
IRFP250
irfp250 applications
ICE-50
IRGP50B60PD1PBF
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50B60PD1
Abstract: P50B60 p50b60pd1
Text: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters
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AUIRGP50B60PD1
AUIRGP50B60PD1-E
50B60PD1
P50B60
p50b60pd1
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MICROSEMI 6804
Abstract: No abstract text available
Text: 15KPA17e3 to 15KPA280CAe3 15000W Transient Voltage Suppressor TVS protection device Main product characteristics VWM 17V – 280V VBR(min) 19V – 312V IPP 515A – 33A VCL(MAX) 29.3V – 454.5V PPP 15000W RoHS COMPLIANT HALOGEN FREE P600 Description and applications
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15KPA17e3
15KPA280CAe3
5000W
5000W
IEC61000-4-2
IEC61000-4-4
15KPAxxYZe3/TR13
15KPA17CAe3/TR13
15KPA36Ae3/TR13
MICROSEMI 6804
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50b60pd
Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
50b60pd
50B60PD1
50B60PD1E
AUIRGP50B60
AUIRGP50B60PD1
p50b60pd1
50b60
AUIRGP50B60PD1E
200V AUTOMOTIVE MOSFET
irfp250 DRIVER
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diode marking 33a on semiconductor
Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDB33N25
FDI33N25
FDI33N25
diode marking 33a on semiconductor
FDB33N25TM
FDI33N25TU
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diode marking 33a on semiconductor
Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
Text: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDB33N25
FDI33N25
FDI33N25
diode marking 33a on semiconductor
FDI33N25TU
marking 33a on semiconductor
FDB33N25TM
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IRGP50B60PD1
Abstract: irfp250 DRIVER smps igbt transistor IRF 630 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD
Text: PD - 94625B IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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94625B
IRGP50B60PD1
IRFPE30
IRGP50B60PD1
irfp250 DRIVER
smps igbt
transistor IRF 630
035H
30ETH06
IRFP250
IRFPE30
IRGP50B60PD
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IRF540N
Abstract: mosfet irf540n
Text: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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IRF540N
O-220
IRF1010
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mosfet irf540n
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