diode T 3512
Abstract: 16 channel demux demux ic ic switch ttl 1A11 1B10 FST163233 IDT74FST163233
Text: 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this
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16-BIT
IDT74FST163233
FST163233
diode T 3512
16 channel demux
demux ic
ic switch ttl
1A11
1B10
IDT74FST163233
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diode T 3512
Abstract: 1A11 1B10 1B12 FST163233 IDT74FST163233 3512
Text: 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: • Bus switches provide zero delay paths • Low switch on-resistance: FST163xxx – 7Ω • TTL-compatible input and output levels • ESD > 2000V per MIL-STD-883, Method 3015;
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16-BIT
IDT74FST163233
FST163xxx
MIL-STD-883,
200pF,
FST163233
diode T 3512
1A11
1B10
1B12
IDT74FST163233
3512
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diode T 3512
Abstract: 1A11 1B10 FST163233 IDT74FST163233 3512 H diode
Text: 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this
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16-BIT
IDT74FST163233
FST163233
SO56-1)
SO56-2)
SO56-3)
diode T 3512
1A11
1B10
IDT74FST163233
3512 H diode
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T 3512 H diode
Abstract: No abstract text available
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 D16 14 T7 11 T3 17 D2 T2 D5 20 NTC T5 8 19 6 15 3 D3 18 5 4 D4 D6 E72873 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase
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E72873
MUBW3512E7
20070912a
T 3512 H diode
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T 3512 H diode
Abstract: diode T 3512 H ds 35-12 e E72873 6002e
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 NTC T5 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase
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E72873
MUBW3512E7
20070912a
T 3512 H diode
diode T 3512 H
ds 35-12 e
E72873
6002e
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RECTIFIER Forward Current 5.0 Amperes
Abstract: MR3500 MR3512
Text: MR3500 - MR3512 AUTOMOTIVE RECTIFIER DIODES MR PRV : 50 - 1200 Volts Io : 35 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 5° NOM 0.342 8.69
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MR3500
MR3512
UL94V-O
temperatur35
RECTIFIER Forward Current 5.0 Amperes
MR3512
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MR3500
Abstract: MR3512
Text: MR3500 - MR3512 AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 35 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.342 8.69 0.332 (8.43) 5° NOM * Pb / RoHS Free
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MR3500
MR3512
UL94V-O
MR3512
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com MR3500 - MR3512 AUTOMOTIVE
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MR3500
MR3512
UL94V-O
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T 3512 H diode
Abstract: diode T 3512 H ixys dwn 110-12
Text: Rectifier Diode Chips DWN = cathode on top, DWP = anode on top V Type U m m max 25*C DWN 5 v r »F •r typ S ‘C 1W C l i s H V tnA mA - 08/12 8 0 0 - 1200 0.005 1 DWN 2 DWN 9 DWN 17DWN 21 DWN 35 DWN 50 DWN 75 DWN 1 1 0 DWN 340 DWN 347 - 12/16 12/16
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T 3512 H diode
Abstract: diode T 3512 H ixys dwn 110-12
Text: Rectifier Diode Chips DW N = cathode on top, DW P = anode on lop v ’ «•I Type v F & I, X v T„ rT T , - : ft-C 25TC w « X W m« $ V * â c v DWN 5 -08/12 800-1200 0.005 1 1.1 DWN DWN DWN DWN DWN DWN DWN DWN DWN DWN 2 -12 /16 9 -12 /16 17-12/18 21 -12/18
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DSA117-16
Abstract: dsai17-12a DSA1110 35-16A DSAI DSA1110-16 10MSA
Text: Rectifier Diodes lFAV= 2 - 160 A, Standard Diodes DS. , Avalanche Diodes (DSA.) VRRM Type * Delivery time on request ► New DS DSA DSA DSA DS DS DSA DSA DSA ► DSP ► DSP ► DSP V 1-12 D 1-12 D 1-16 D 1-18 D * 2-08 A 2-12 A 2-12 A 2-16 A 2-18 A* 8-08 A
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D0-203AB
-28UNI
D0-205AC
DSA117-16
dsai17-12a
DSA1110
35-16A
DSAI
DSA1110-16
10MSA
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ds 35-12 e
Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
Text: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS
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DSAI17-12
DSA117-16
OSAI35-12
DSAI35-16
DSAI35-18
ASAI75-18B
D0-205AC
D0-30)
DSAI110-12
DSAI110-16
ds 35-12 e
4508A
dsai17-12a
DSAI11016F
A 3150 V
DSAI110
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din 7504
Abstract: DSA 7504 35-04A D0203 A 1712 ds 35-12 e DSA-36W-12 36 L/bbc dsa diodes DSA 1.2
Text: Rectifier Diodes = 2 - 25 A, Standard Diodes DS. , Avalanche Diodes (DSA.) FAV Type V « -c Pr h U . kW 1.« A •V Package stylo V * See outlines on page 31 I Fig. 8 weiant 0.8 g 10 nw DSA 1-18 D * DSA 1-16 D • DS 1-16 D • DSA 1-14 D • DS 1-14 D
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2-14E
D0-203
din 7504
DSA 7504
35-04A
D0203
A 1712
ds 35-12 e
DSA-36W-12 36
L/bbc dsa diodes DSA 1.2
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T 3512 H diode
Abstract: diode T 3512 H A5140 ds 35-12 e
Text: IGBT Modules Sixpack ^C25 V CES V CE sat typ. 45 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions v CES v CGR Tj = 25°C to 150°C T,J = 2 5 °C to 150°C;} FL = 2 0 kft VeES v GEM Continuous ±20 V Transient
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D-68623
T 3512 H diode
diode T 3512 H
A5140
ds 35-12 e
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PS-4512 diode
Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Text: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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O-240
65------------r
PS-4512 diode
T 4512 H diode
ps 4512 diode
diode T 4512 H
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Untitled
Abstract: No abstract text available
Text: iniXYS MWI 35-12 A! IGBT Modules Sixpack = 45 A = 1200 V VCE 8atlw.= 2.2V v ces Symbol Conditions VCES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; Rqe = 20 k£2 vGES v GEM Continuous Transient *C25 ^CSO ' cm *sc (SCSOA Maximum Ratings V V ±20 ±30 V
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D-68623
0004bÃ
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Untitled
Abstract: No abstract text available
Text: IDT74FST163233 ADVANCE INFORMATION 16-BIT 2:1 MUX/DEMUX SWITCH FEATURES: • Bus switches provide zero delay paths • Low switch on-resistance: FS T 1 63 xx x -7 Q • TTL-compatible input and output levels • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0
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IDT74FST163233
16-BIT
MIL-STD-883,
200pF,
FST163233
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diode T 3512
Abstract: AR3500 AR3512
Text: AR3500 thru AR3512 35 Amps. Automotive Rectifier Diodes Voltage Range 50 to 1200 Volts Forward Current 35 Amperes 5VM5EMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ H igh c u rre n t c a p a b ility High su rg e c u rre n t c a p a b ility High reliab ility
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AR3500
AR3512
UL94V-0
diode T 3512
AR3512
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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transistor 3504 npn
Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803
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Efl463S2
TMI\I515TQR
rc-25Â
2N3867
2N3868
2N5147
2N5149
2N5151
2N5153
2N5148
transistor 3504 npn
2N3742
2N5150
2N5152
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dsdi 7-015 A
Abstract: DSDI 17-04 DSD 17-14 b DSDI 71-16 DSD 12-16 dsdi 7-015 DSDI DSDI 7-01 B DSDI 20-01 b DSDI 17-14 b
Text: A S E A BROUN/ABB SENICON Schnelle Dioden Diode DSD Vrrm Fast switching diodes If r m s Ki If a v i Tc - 100°C A °C A(°C) DSDI 5-04 A DSD1 5-06 A DSDI 5-08 A 400 600 800 10 DSDI 7-01 A DSDI 7-015 A DSDI 7-02 A 100 10 ft vF If Ir r m (10 ms) 10 ms T y j =• 45°C
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DO-200
1H1T1SW27T
dsdi 7-015 A
DSDI 17-04
DSD 17-14 b
DSDI 71-16
DSD 12-16
dsdi 7-015
DSDI
DSDI 7-01 B
DSDI 20-01 b
DSDI 17-14 b
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A2529
Abstract: CS 8-12 10MSA
Text: Thyristors, SCRs S C R = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all oth e r co ntro lle d sem i-co n d uctor components, they feature the highest current capacity per chip area, especially at high
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O-247
ISOPLUS22QTM
O-208
T0-208
ISOPLUS247TM
-28UNF-2
A2529
CS 8-12
10MSA
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T 4512 H diode
Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Text: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re
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O-247
TC5-208
T0-209
T 4512 H diode
diode T 4512 H
cs 23-12
cs 45-12 iol
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