35N120D1
Abstract: D-68623 IXER 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
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35n120au1
Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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35N120AU1
35n120au1
IXSX35N120AU1
IGBT 500V 35A
35N120AU
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35N120
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20
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247TM
35N120BD1
728B1
35N120
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IGBT 500V 35A
Abstract: 35n120a
Text: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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35N120A
O-247
S35N12
IXSH35N120
IGBT 500V 35A
35n120a
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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35N120B
O-268
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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Original
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35N120C
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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Original
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247TM
35N120BD1
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PDF
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IXLK35N120AU1
Abstract: No abstract text available
Text: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous
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35N120AU1
IXLK35N120AU1
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PDF
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IXLN35N120AU1
Abstract: No abstract text available
Text: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous
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Original
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35N120AU1
IXLN35N120AU1
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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Original
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35N120AU1
150perature
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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Original
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35N120AU1
O-247TM
IXSX35N120AU1)
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PDF
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Untitled
Abstract: No abstract text available
Text: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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35N120B
35N120B
O-247
O-268
O-247)
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PDF
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ixgh35n120b
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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Original
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35N120B
35N120B
O-268
O-247
ixgh35n120b
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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35N120C
35N120C
O-268
O-247
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IXGX
Abstract: No abstract text available
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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35N120B
35N120BD1
O-264
247TM
728B1
IXGX
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT IXGH 35N120B VCES = 1200 V = 70 A IXGT 35N120B IC25 VCE sat = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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Original
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35N120B
O-268
O-247
O-268)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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Original
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35N120B
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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Original
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247TM
35N120BD1
728B1
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PDF
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DIODE 0644
Abstract: 35N120D1 IXER 35N120D1 diode RG 39
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
IXER 35N120D1
diode RG 39
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PDF
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35N120D1
Abstract: D-68623 8200T u2003
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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Original
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35N120D1
247TM
E153432
35N120D1
D-68623
8200T
u2003
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PDF
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IXGR35N120BD1
Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300
Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200
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35N120BD1
IC110
IF110
405B2
IXGR35N120BD1
igbt induction cooker
induction cooker
IF110
ISOPLUS247
35n120
S2300
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PDF
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IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
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OCR Scan
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35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
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PDF
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Untitled
Abstract: No abstract text available
Text: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings
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OCR Scan
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35N120AU1
O-264
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25
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OCR Scan
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35N120AU1
to150
O-264AA
JEDECTO-264AA
35N120AU1
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PDF
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