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STMicroelectronics STP35N60DM2 MOSFET N-CH 600V 28A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP35N60DM2	Tube	988		1	1 $4.85 10 $4.85 100 $4.85 1000 $1.76147 10000 $1.75538	Buy Now
Avnet Americas	STP35N60DM2	Tube		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.75538 10000 $1.65146	Buy Now
Mouser Electronics	STP35N60DM2					1 $4.33 10 $4.14 100 $2.18 1000 $1.75 10000 $1.75	Get Quote
Newark	STP35N60DM2	Bulk	970		1	1 $3.42 10 $3.07 100 $2.61 1000 $1.81 10000 $1.76	Buy Now
STMicroelectronics	STP35N60DM2				1	1 $4.24 10 $4.06 100 $2.14 1000 $1.78 10000 $1.78	Buy Now

TME	STP35N60DM2				1	1 $4.17 10 $3.49 100 $3.13 1000 $2.92 10000 $2.92	Get Quote
Avnet Silica	STP35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STF35N60DM2 MOSFET N-CH 600V 28A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF35N60DM2	Tube	920		1	1 $4.21 10 $4.21 100 $2.3462 1000 $2.3462 10000 $2.3462	Buy Now
Avnet Americas	STF35N60DM2	Bulk		16 Weeks	1,000	1 - 10 - 100 - 1000 $2.34625 10000 $2.20824	Buy Now
Mouser Electronics	STF35N60DM2		918			1 $3.17 10 $3.16 100 $2.35 1000 $2.34 10000 $2.34	Buy Now
Newark	STF35N60DM2	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STF35N60DM2		918		1	1 $3.11 10 $3.1 100 $2.3 1000 $2.3 10000 $2.3	Buy Now

TME	STF35N60DM2				1	1 $4.68 10 $3.72 100 $3.47 1000 $3.47 10000 $3.47	Get Quote
Avnet Silica	STF35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHP35N60EF-GE3 MOSFET N-CH 600V 32A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP35N60EF-GE3	Tube	728		1	1 $6.92 10 $6.92 100 $6.92 1000 $2.8275 10000 $2.8275	Buy Now
Littelfuse Inc IXKH35N60C5 MOSFET N-CH 600V 35A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKH35N60C5	Tube	359		1	1 $8.18 10 $8.18 100 $6.72667 1000 $6.72667 10000 $6.72667	Buy Now
Newark	IXKH35N60C5	Bulk			300	1 - 10 - 100 - 1000 $7.05 10000 $7.05	Buy Now
Infineon Technologies AG SPW35N60C3FKSA1 MOSFET N-CH 650V 34.6A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW35N60C3FKSA1	Tube	142		1	1 $10.43 10 $10.43 100 $6.20667 1000 $5.05875 10000 $5.05875	Buy Now
Mouser Electronics	SPW35N60C3FKSA1		44			1 $9.57 10 $9.46 100 $5.29 1000 $5.05 10000 $5.05	Buy Now
Newark	SPW35N60C3FKSA1	Bulk			1	1 $9.4 10 $8.24 100 $5.58 1000 $5.26 10000 $5.26	Buy Now
Rochester Electronics	SPW35N60C3FKSA1		94		1	1 $5.62 10 $5.62 100 $5.28 1000 $4.78 10000 $4.78	Buy Now
EBV Elektronik	SPW35N60C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	SPW35N60C3FKSA1		5,060			1 - 10 $5.392 100 $4.175 1000 $4.175 10000 $4.175	Buy Now

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35N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S D(TAB) Features MOSFET Conditions VDSS TVJ = 25°C	Original	PDF	35N60C5 O-247
Untitled Abstract: No abstract text available Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C	Original	PDF	35N60C5 O-247 20070625a
35n60c Abstract: ixkp35n60c5m Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	PDF	35N60C5M O-220 20080310a 35n60c ixkp35n60c5m
IXKH35N60C5 Abstract: No abstract text available Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	35N60C5 O-247 20090209c IXKH35N60C5
DSA003710 Abstract: No abstract text available Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C	Original	PDF	35N60C5 O-247 20070625a DSA003710
35n60 Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	PDF	35N60C5 O-247 O-220 20080523a 35n60 IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB
35N60 Abstract: 35N60BD1 Text: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	PDF	35N60 247TM IXDR30N60BD1 35N60BD1
Untitled Abstract: No abstract text available Text: IXDP 35N60 B VCES = 600 V IXDH 35N60 B IC25 = 60 A IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B Symbol Conditions IXDH 35N60 BD1 Maximum Ratings	Original	PDF	35N60 O-247 O-220 IXDH30N60B
Untitled Abstract: No abstract text available Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information ID25 = 35 A = 600 V VDSS RDS on max = 0.1 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G	Original	PDF	35N60C5 35N60C5 O-247 O-220
diode B4 Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1 Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B	Original	PDF	O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
35n60 Abstract: 35N60 datasheet 35N60BD1 IXDH30N60 IXDH30N60B Text: IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B IXDH 35N60 BD1 Symbol Conditions Maximum Ratings	Original	PDF	35N60 O-247 IXDH30N60B 35N60 datasheet 35N60BD1 IXDH30N60 IXDH30N60B
Untitled Abstract: No abstract text available Text: IGBT with optional Diode IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V High Speed, Low Saturation Voltage C G Preliminary Data TO-247 AD C G E G C E IXDH 35N60 B BD1 IXDP 35N60 B IXDH 35N60 Symbol Conditions VCES TJ = 25°C to 150°C	Original	PDF	35N60 O-247 35N60 O-220
Untitled Abstract: No abstract text available Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	35N60C5 O-247 20090209c
Untitled Abstract: No abstract text available Text: IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B IXDH 35N60 BD1 Symbol Conditions Maximum Ratings	Original	PDF	35N60 O-247 IXDH30N60B

Untitled Abstract: No abstract text available Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	35N60C5 O-247 20080310b
Untitled Abstract: No abstract text available Text: IXDR 35N60 BD1 VCES = 600 V IC25 = 38 A VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V Features ● ● VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	PDF	35N60 247TM IXDR30N60BD1
35N60 Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n Text: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220	Original	PDF	O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
Untitled Abstract: No abstract text available Text: 35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB35N60FL2WG NGTB35N60FL2W/D
35n60c3 Abstract: 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c Text: 35N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances	Original	PDF	SPW35N60C3 P-TO247 Q67040-S4673 35N60C3 35n60c3 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c
35N60CFD Abstract: SPW35N60CFD JESD22 Q67045A5053 D219 Text: 35N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	PDF	SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 009-134-A PG-TO247-3-21-41 35N60CFD SPW35N60CFD JESD22 Q67045A5053 D219
35N60CFD Abstract: SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor Text: 35N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	PDF	SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 35N60CFD SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor
35n60c3 Abstract: SPW35N60C3 D219 D219A Q67040-S4673 35N60 Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances	Original	PDF	SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3 SPW35N60C3 D219 D219A Q67040-S4673 35N60
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	PDF	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	PDF	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1

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35N60 Search Results

35N60 Price and Stock

STMicroelectronics STP35N60DM2

STMicroelectronics STF35N60DM2

Vishay Siliconix SIHP35N60EF-GE3

Littelfuse Inc IXKH35N60C5

Infineon Technologies AG SPW35N60C3FKSA1

35N60 Datasheets Context Search

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35n60c

IXKH35N60C5

DSA003710

35n60

35N60

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diode B4

35n60

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35N60

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35n60c3

35N60CFD

35N60CFD

35n60c3

IXBH 40N160

30N120D1