Untitled
Abstract: No abstract text available
Text: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ 36 TC 8V O 8Q 1. 01 IN V 35 64 -1 18 IQ UT N RS -G The InQor quarter-brick converter series is composed
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IQ64xxxQTXxxx
8-135V
3000Vdc
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Untitled
Abstract: No abstract text available
Text: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ UT 8V O 1. 01 V 35 64 -1 18 IQ IN 8Q TC 36 N RS -G The InQor quarter-brick converter series is composed
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IQ64xxxQTXxxx
8-135V
3000Vdc
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CHN 044 VW
Abstract: NB18
Text: CMOS SyncBiFIFO with Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2 IDT723624 IDT723634 IDT723644 • Port B bus sizing ot 36-bits long word , 18-bits (word) and 9-bits (byte) • Big- or Little-Endian tormat tor word and byte bus sizes • Master Reset clears data and contigures FIFO, Partial
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IDT723624-256
IDT723634-512
IDT723644-1
IDT723624
IDT723634
IDT723644
36-bits
18-bits
PK128-1
CHN 044 VW
NB18
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Untitled
Abstract: No abstract text available
Text: Rev 0. GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GoldStar 1,048,576 WORDS x 36 BIT GOLDSTAR ELECTRON CO., LTD. GMM7362000BS/BSG-60/70/80 2,097,152 WORDS x 36 BIT/CMOS DYNAMIC RAM MODULE Description Features The GMM7361000BSG/BSGS is a 1M x 36 bits dy
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GMM7361000BS/BSG-60/70/80
GMM7361000BSS/BSGS-60/70/80
GMM7362000BS/BSG-60/70/80
GMM7361000BSG/BSGS
GMM7362000BS/BSG
1IV13Q-
JliJULNJL1111111
IJ11IUI11IL!
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lj26
Abstract: D35B D35A
Text: LH5420 256 x 36 x 2 Bidirectional FIFO FEATURES • TTL/CMOS-Compatible I/O • Fast Cycle Times: 25/30/35 ns • Space-Saving PQFP Package • Two 256 x 36-bit FIFO Buffers • PQFP to PGA Package Conversion * • Full 36-bit Word Width FUNCTIONAL DESCRIPTION
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LH5420
36-bit
36/18/9-bit
132-pin
0D1L273
132-Pin,
PQFP132-P-S950)
LH5420P-25
lj26
D35B
D35A
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SH 6770
Abstract: No abstract text available
Text: MET'f* JE/ OCT 15 1992 MC-428000A36 8,388,608 X 36-Bit Dynamic CMOS RAM Module W NEC Electronics Inc. Prelim inary Information _ September Description Pin Configuration The M C-428000A 36 is a fast-page dynam ic RAM mod ule organized as 8,388,608 words by 36 bits and de
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MC-428000A36
36-Bit
C-428000A
72-Pin
SH 6770
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MB87030
Abstract: sdb01 MB87031 EXBF fpt-1 MB87035
Text: MB87035/36 SCSI Protocol Controller SPC for use with Differential or Single-end Drivers Edition 1.0 September 1989 GENERAL DESCRIPTION The MB87035/36 SCSI Protocol Controller (SPC) Is a CMOS LSI circuit specifically designed to control a Small Computer Systems Interface (SCSI). The MB87035/36 is an enhanced version of Fujitsu’s
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MB87035/36
MB87035/36
MB87030
MB87030,
28-bit
sdb01
MB87031
EXBF
fpt-1
MB87035
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TC55WD836FF
Abstract: TC55WD836FF-133
Text: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36
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TC55WD836FF-133
144-WORD
36-BIT
TC55WD836FF
LQFP1OO-P-1420-0
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TC55WD836FF
Abstract: TC55WD836FF-133
Text: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36
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TC55WD836FF-133
144-WORD
36-BIT
TC55WD836FF
LQFP1OO-P-1420-0
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.
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32K-WORD
36-BIT
uPD431636L
768-word
36-bit
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Untitled
Abstract: No abstract text available
Text: REVISIONS DESCRIPTION REV /c;n nan DATE KYLE 7 -2 5 -9 7 ¿ 0 ^ 8 /5 /9 7 REVISED o n APPROVED *.001 190-36, UNS-2B |A |.0 0 3 TIR "OSSP PLUG 051±-001 RECOMMENDED MOUNTING HOLE C'SINK 90° TO 0 - -200 MIN THD .190-36, UN5-2A ACROSS FLATS ELECTRICAL Nominal Impedance Ohms
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OU20-0261-01
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 128K x 36, 256K x 18, 3.3V SYNCHRONOUS SRAMS WITH ZBT FEATURE, 2.5V or 3.3V I/O, BURST COUNTER, AND PIPELINED OUTPUTS FEATURES: • 128K x 36, 256K x 18 memory configurations • Supports high performance system speed - 200 MHz
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IDT71V2556
IDT71V2558
IDT71V3556
IDT71V3558
IDT71
Vx556/58
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G80E 1A
Abstract: g80e mt 6223 65-28
Text: ASSMANN Socket Strips Electronic C o m p o n en ts Socket strips, pitch 1.27 mm H t* Single row D oub l« row nu, ‘•"H « £ £ : IDS » w |l “ Is sf » L J i.» No. of contacts Plating Partito. AWRL160/G36 36 Gold AWRL160/Z36 tin 36 3 a jo -1 -* , J f Tir
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AWRL160/Z36
AWRL160/G36
AWRZ16VG20
VG100
AWRH160/G36
AWRH16Q/Z36
160/G20SM
160/G40SM
160/G60SM
1G0/G80SM
G80E 1A
g80e
mt 6223
65-28
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Untitled
Abstract: No abstract text available
Text: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y n am ic RAM M O D U LE w hich is assem b led 8
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GMM7361000SG/SGS-60/70/80
GMM7362000SG-60/70/80
7361000SG
7362000SG
cito38)
M7361000SG/SGS
7362000SG
GMM7362000SG
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Untitled
Abstract: No abstract text available
Text: i l 1992 MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module LlMJ W NEC Electronics Inc. Preliminary Information August 1992 _ Description Pin Configuration The MC-424000A36 is a fast-page dynamic RAM mod ule organized as 4,194,304 words by 36 bits and de
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MC-424000A36
36-Bit
MC-424000A36
72-Pin
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ic nn 5198 k
Abstract: nn 5198 k mcm54400
Text: M OTOROLA SEMICONDUCTOR -TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory
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MCM36104
72-lead
MCM54400AN
MCM36200
ic nn 5198 k
nn 5198 k
mcm54400
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14D241
Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
Text: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61
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045x022x8
I245F
032x018x6
14D241
Bt141
mz3 ptc
14d561
PCB Potentiometers RA 16Y
thermistor MZ4
OS 430 NR, VARISTOR
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t7775
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD464318L, 464336L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT HSTL INTERFACE Description The /¿PD464318L is a 262,144 words by 18 bits, and the /¿PD464336L is a 131,072 words by 36 bits synchronous
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uPD464318L
uPD464336L
256K-WORD
18-BIT
128K-WORD
36-BIT
PD464318L
PD464336L
/JPD464318L
/XPD464336L
t7775
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Untitled
Abstract: No abstract text available
Text: SEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to o perate from a single + 5-volt power sup
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MC-424512A36BH/FH
36-Bit
MC-42512A36BH/FH
72-Pin
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to operate from a single + 5-volt power sup
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MC-424512A36BH/FH
36-Bit
72-Pin
MC-42512A36BH/FH
MC-424512A36BH/FH
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Untitled
Abstract: No abstract text available
Text: GoldStar GOLDSTAR ELECTRON CO., LTD. Description GMM7364000BS/BSG-60/70/80 4,194,304 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Features The GMM7364000BS/BSG is a 4M x36 Bits dy • 72 pins Single In-Line Package GMM736XXXXBS: Tin-Lead Plate namic RAM MODULE which is assembled 36
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GMM7364000BS/BSG-60/70/80
GMM7364000BS/BSG
GMM736XXXXBS:
GMM736XXXXBSG:
7364000BS/BSG
MIN100
DDD3T31
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MC-421000A36
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is afast-p age dynamic RAM module organized as 1,048,576 words by 36 bits and designed to o perate from a single + 5-volt power supply. Ad
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MC-421000A36
36-Bit
83YL-7246B
MC-421000A36
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT /¿PD464518L, 464536L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT LVTTL INTERFACE Description The ,uPD464518L is a 262,144 words by 18 bits, and the ,uPD464536L is a 131,072 words by 36 bits synchronous
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PD464518L,
464536L
256K-WORD
18-BIT
128K-WORD
36-BIT
uPD464518L
uPD464536L
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424256 memory
Abstract: 424256
Text: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power
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MC-42512A36,
-424512A36
36-Bit
MC-42512A36
MC-424512A36
72-Pin
424256 memory
424256
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