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    36N50P Search Results

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    36N50P Price and Stock

    Littelfuse Inc IXTT36N50P

    MOSFET N-CH 500V 36A TO268
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    DigiKey IXTT36N50P Tube 230 1
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    Newark IXTT36N50P Bulk 300
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    Littelfuse Inc IXTQ36N50P

    MOSFET N-CH 500V 36A TO3P
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    DigiKey IXTQ36N50P Tube 195 1
    • 1 $11.15
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    Newark IXTQ36N50P Bulk 300
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    Littelfuse Inc IXFR36N50P

    MOSFET N-CH 500V 19A ISOPLUS247
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    DigiKey IXFR36N50P Tube 22 300
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    Newark IXFR36N50P Bulk 300
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    RS IXFR36N50P Bulk 8 Weeks 30
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    Littelfuse Inc IXTH36N50P

    MOSFET N-CH 500V 36A TO247
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    DigiKey IXTH36N50P Tube 300
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    IXYS Corporation IXTV36N50P

    MOSFET N-CH 500V 36A PLUS220
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    36N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    I 508 V

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol


    Original     		PDF ISOPLUS247TM 36N50P I 508 V

    123B16

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 36N50P 36N50P PLUS220 O-268 O-247 405B2 IXFH36N50P 123B16

    36n50P

    Abstract: PLUS220SMD V36N50P
    Text: Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 IXTH 36N50P IXTT 36N50P IXTQ 36N50P IXTV 36N50P IXTV 36N50PS RDS on = 500 V = 36 A Ω = 170 mΩ TO-3P (IXTQ) Symbol Test Conditions


    Original     		PDF 36N50P 36N50PS O-247 PLUS220 PLUS220SMD 36n50P PLUS220SMD V36N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A Ω ≤ 170 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 36N50P 36N50PS O-247 O-268 PLUS220 PLUS220SMD

    plus220smd

    Abstract: 36N50P IXFH36N50P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions


    Original     		PDF 36N50P 36N50PS O-247 405B2 IXFH36N50P plus220smd 36N50P

    36n50P

    Abstract: 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25
    Text: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A ≤ 170 mΩ Ω TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 36N50P 36N50PS O-247 O-268 PLUS220 PLUS220SMD 36n50P 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25

    36N50P

    Abstract: IXTQ36N50P
    Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 36N50P 36N50P IXTQ36N50P

    IXFH36N50P

    Abstract: 36N50PS 36N50 36n50P PLUS220SMD
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS on trr = 500 V = 36 A ≤ 170 mΩ Ω ≤ 200 ms TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 36N50P 36N50PS O-247 IXFH36N50P 36N50P PLUS220 36N50PS 36N50 PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr IXFC 36N50P IXFR 36N50P (Electrically Isolated Back Surface) V A mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 36N50P 12-06-05-C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 36N50P 36N50P PLUS220 O-268 O-247 405B2 IXFH36N50P

    36n50P

    Abstract: ISOPLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS ID25 = = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 500 18 190 250 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol


    Original     		PDF 36N50P 36n50P ISOPLUS247

    36N50

    Abstract: 36N50P ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 36N50P 12-06-05-C 36N50 36N50P ISOPLUS247

    36n50P

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 36N50P 36n50P

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p