Untitled
Abstract: No abstract text available
Text: 36P0K Plastic 36pin 400mil SOJ EIAJ Package Code SOJ36-P-400-1.27 JEDEC Code – Weight g Lead Material Alloy 42 b2 I1 I2 e D 36 e1 c 19 e1 HE E Recommended Mount Pad Symbol 1 18 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters
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36P0K
36pin
400mil
SOJ36-P-400-1
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PRSJ0036DA-A
Abstract: EE-119
Text: JEITA Package Code P-SOJ36-10.16x23.39-1.27 RENESAS Code PRSJ0036DA-A *1 Previous Code 36P0K MASS[Typ.] 1.4g D c HE *2 E e1 19 36 1 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 18 Index mark L
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P-SOJ36-10
16x23
PRSJ0036DA-A
36P0K
PRSJ0036DA-A
EE-119
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36pin
Abstract: No abstract text available
Text: e y b 18 1 b1 Weight g 19 D JEDEC Code – 36 EIAJ Package Code SOJ36-P-400-1.27 Lead Material Alloy 42 SEATING PLANE HE 36P0K A E A1 L c b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8 –
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SOJ36-P-400-1
36P0K
36pin
400mil
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs 2001.5.17 Ver.F Notice: This is not a final specification. Some parametric limits are subject to change M5M54R08AJ,TP-10,-12 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08A is a family of 524288-word by 8-bit
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M5M54R08AJ
TP-10
4194304-BIT
524288-WORD
M5M54R08A
TP-10
TP-12
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MITSUBISHI GATE ARRAY
Abstract: M5M54R08AJ-12
Text: MITSUBISHI LSIs 2000.6.22 Ver.E M5M54R08AJ-12 Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08AJ is a family of 524288-word by 8-bit
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M5M54R08AJ-12
4194304-BIT
524288-WORD
M5M54R08AJ
MITSUBISHI GATE ARRAY
M5M54R08AJ-12
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PRQP0080GB-A
Abstract: IC 404 100p6s 80p6n 44P0K PRSJ0036DA-A PRSJ0044DA-A PLQP0144KA-A CP68
Text: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B 44-mm width emboss taping
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44-mm
MTE4416F-36P0K
PRSJ0036DA-A
36P0K
MTE4416H-44P0K
PRSJ0044DA-A
44P0K
MTE4424H-80P6N-A
MTE4424H-100P6A-A
MTE4432H-144P6Q-A
PRQP0080GB-A
IC 404
100p6s
80p6n
44P0K
PLQP0144KA-A
CP68
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432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P
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240K6X-A
240P6Y-A
240P6Z-A
255F7F
256F7B
256F7X-A/B
256P6J-E
256P6K-E
272F7X-A/B
281S8-C
432W6
48P4B
hssop
44P3W-R
28P0
5P5T
tsop 2-54
42P9R
70P3S-M
479F7G
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R1RP0408DGE-2PR
Abstract: R1RP0408D R1RP0408DGE-2LR
Text: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RP0408D
512-kword
REJ03C0112-0100Z
512-k
400-mil
36-pin
R1RP0408DGE-2PR
R1RP0408DGE-2LR
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R1RW0408D
Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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R1RP0408D
Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR
Text: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RP0408D
512-kword
REJ03C0112-0200
512-k
400-mil
36-pin
R1RP0408DGE-2LR
R1RP0408DGE-2PR
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MITSUBISHI GATE ARRAY
Abstract: No abstract text available
Text: MITSUBISHI LSIs 2002.10.15 Ver.G Notice: This is not a final specification. Some parametric limits are subject to change M5M54R08AJ,TP-10,-12 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08A is a family of 524288-word by 8-bit
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M5M54R08AJ
TP-10
4194304-BIT
524288-WORD
M5M54R08A
TP-10
TP-12
MITSUBISHI GATE ARRAY
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MH8S64AQFC -7
Abstract: M5M51008CFP-70HI sop-32 pin Shipping Trays S1912 M5M5V108DFP-70HI jeida dram 88 pin M5M465165 MH8S64AQFC-6 MH8S64DBKG-6 PC-100
Text: Please Read Notes First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents New Publications MCP Multi Chip Package Standard Discrete DRAM PC Cards Standard DRAM Modules IC Package SRAM Flash Memory Quality Assurance and Reliability Testing
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524,288 x 8bit
Abstract: M5M54R08J-12 M5M54R08J-15 524288-WORD
Text: MITSUBISHI LSIs M5M54R08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M54R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate
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M5M54R08J-12
4194304-BIT
524288-WORD
M5M54R08J
M5M54R08J
M5M54R08J-12
M5M54R08J-15
524,288 x 8bit
M5M54R08J-15
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M5M5V4R08J-12
Abstract: M5M5V4R08J-15
Text: MITSUBISHI LSIs M5M5V4R08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate
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M5M5V4R08J-12
4194304-BIT
524288-WORD
M5M5V4R08J
M5M5V4R08J
M5M5V4R08J-12
M5M5V4R08J-15
M5M5V4R08J-15
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R1RW0408D
Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Text: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RW0408D
512-kword
REJ03C0111-0200
400-mil
36-pin
R1RW0408DGE-2LR
R1RW0408DGE-2PR
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R1RW0408DGE-2PI
Abstract: R1RW0408DI
Text: R1RW0408DI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit REJ03C0113-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RW0408DI
512-kword
REJ03C0113-0100Z
R1RW0408DI
400-mil
36-pin
R1RW0408DGE-2PI
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524,288 x 8 bit
Abstract: M5M54R08AJ-10 M5M54R08AJ-12 M5M54R08AJ-15 524,288
Text: MITSUBISHI LSIs 1998.11.30 Ver.B M5M54R08AJ-10,-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08AJ is a family of 524288-word by 8-bit
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M5M54R08AJ-10
4194304-BIT
524288-WORD
M5M54R08AJ
524,288 x 8 bit
M5M54R08AJ-12
M5M54R08AJ-15
524,288
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R1RW0408D
Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Text: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RW0408D
512-kword
REJ03C0111-0100Z
R1RW0408D
400-mil
36-pin
R1RW0408DGE-2LR
R1RW0408DGE-2PR
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R1RP0408DGE-2PI
Abstract: R1RP0408DI
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M5M5V2132GP7
Abstract: MH2568BBN MH2568BBNA M5M51008BVP
Text: Memory capacity Memory Configuration Access/ Clock ne Functionmode 5.0/7.S 5.0/8.5 5.5/10.0 7.0/13.3 8,0/15.0 12 15 20 12 15 20 12 15 20 Vcc= 3.13 to 3.47V 2M Sync. Burst Pipeline 64Kx32 V c c — 3 .1 3 to 3.8V Sync. Burst Pipeline 4Mx1 4M Vcc= 3.13 to 3.6V
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64Kx32
512Kx8
M5M5V2132GP-5H
M5M5V2132GP-5
M5M5V2132GP-6
M5M5V2132GP-7
M5M5V2132GP-8
M5M5V4R01J-12
M5M5V4R01J-I5
M5M5V4R01J-20
M5M5V2132GP7
MH2568BBN
MH2568BBNA
M5M51008BVP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5V4R08J-12,-15,-20 P R E L IM IN A R Y 1997 02 0 6 Notice: This is not a final specification. Some parametric limits are subject to change R ev D 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static
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M5M5V4R08J-12
4194304-BIT
524288-WORD
M5M5V4R08J
36-pin
M5M5V4R08J-12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs 1998.11.30 Ver.B Q D Â M5M54R04AJ-10,-12,-15 0 V N o tic e : T h is is n o t a fin a l s p e c ific a tio n . 4194304-BIT 1048576-WORD BY 4-BIT) CMOS STATIC RAM S o m e p a r a m e tr ic lim its a r e s u b je c t to c h a n g e DESCRIPTION
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M5M54R04AJ-10
4194304-BIT
1048576-WORD
M5M54R04AJ
M5M54R04AJ-10
M5M54R04AJ-12.
M5M54R04AJ-15.
36P0K
SQJ36-P-400-1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5M 5V 4R 08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate
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OCR Scan
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08J-12
4194304-BIT
524288-WORD
M5M5V4R08J
36-pin
M5M5V4R08J-12
M5M5V4R08J-15
363mW
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs 1996.6.11 MÇM5V4R08 J-10,-12,-15 PRELIM I N A R Y Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R0SJ is a family o f 524288-word by 8-bit static
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M5V4R08
4194304-BIT
524288-WORD
M5M5V4R08J
36-pin
A0-18
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