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KMM374S1623BT-GL Abstract: KMM374S1623BT-G8 KMM374S1623BT-GH Text: Preliminary PC100 SDRAM MODULE 374S1623BT KM M 374S1623BT SDRAM DIMM 16M x72 SDRAM DIMM w ith ECC based on 8M x8, 4Banks, 4K Refresh, 3.3V S ynchronous D R AM s with SPD FEATURE G ENERAL DESCRIPTION T h e S a m s u n g K M M 3 7 4 S 1 6 2 3 B T is a 16M bit x 7 2 S y n c h ro n o u s	OCR Scan	KMM374S1623BT KMM374S1623BT PC100 KMM374S1623BT-GL KMM374S1623BT-G8 KMM374S1623BT-GH	PDF
Untitled Abstract: No abstract text available Text: PC66 SDRAM MODULE 374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.	OCR Scan	KMM374S1623BTL KM48S8030BT	PDF
Untitled Abstract: No abstract text available Text: Preliminary PC100 SDRAM MODULE 374S1623BT 374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range	OCR Scan	PC100 KMM374S1623BT KMM374S1623BT 16Mx72 1623BT 374S1623BT-G 125MHz 374S1623BT-GH 100MHz	PDF
374S1623BTL Abstract: No abstract text available Text: Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL 374S1623BTL SDRAM DIMM	OCR Scan	KMM374S1623BTL_ KMM374S1623BTL KMM374S1623BTL 16Mx72 374S1623BTL 1623BTL 400mil 168-pin 48S8030BT	PDF
KMM374S1623BTL Abstract: KMM374S1623BTL-G0 Text: 374S1623BTL PC66 SDRAM MODULE 374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung 374S1623BTL is a 16M bit x 72 Synchro nous Dynamic RAM high density memory module. The Samsung	OCR Scan	KMM374S1623BTL KMM374S1623BTL 16Mx72 400mil 168-pin KMM374S1B23BTL KMM374S1623BTL-G0	PDF
km48s2020ct Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030 Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks	OCR Scan	KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030	PDF
Untitled Abstract: No abstract text available Text: Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL 374S1623BTL SDRAM DIMM	OCR Scan	KMM374S1623BTL_ KMM374S1623BTL KMM374S1623BTL 16Mx72 374S1623BTL 1623BTL 374S1623BTL-G 125MHz 400mQM	PDF
Untitled Abstract: No abstract text available Text: PC100 SDRAM MODULE 374S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : + 5 u A to ± 1 u A , - Cin to be measured at V dd I il (DQ) : + 5 u A to ± 1.5uA. = 3.3V, T a = 23°C , f = 1 MHz, V	OCR Scan	KMM374S1623BT PC100 150Max KM48S8030BT	PDF