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    Untitled

    Abstract: No abstract text available
    Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing


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    FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ PDF

    Untitled

    Abstract: No abstract text available
    Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our


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    FMA3058 20GHz FMA3058 15dBm FMA3058-000 FMA3058-000SQ FMA3058-000S3 DS090609 PDF

    X-band Gan Hemt

    Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
    Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V


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    FMA246 FMA246 14GHz. 19dBm FMA246-000 FMA246-000SQ FMA246-000S3 DS090309 X-band Gan Hemt A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip PDF

    X-band Gan Hemt

    Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


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    FMA3015 FMA3015 FMA3015-000 FMA3015-000SQ DS090306 FMA3015-000S3 X-band Gan Hemt 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier PDF

    FMA3058

    Abstract: MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609
    Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our


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    FMA3058 20GHz FMA3058 15dBm 20GHz -12dB -10dB FMA3058-000 MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609 PDF

    x-Band Hemt Amplifier

    Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
    Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V


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    FMA246 FMA246 14GHz. FMA246-000 FMA246-000SQ FMA246-000S3 DS110503 x-Band Hemt Amplifier x-band mmic X-band GaAs pHEMT MMIC Chip PDF

    FPD750

    Abstract: MIL-HDBK-263 InP HBT transistor DS090609
    Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing


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    FPD750 FPD7500 FPD750 25mx750m OT343, 12GHz 38dBm MIL-HDBK-263 InP HBT transistor DS090609 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V


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    FMA246 FMA246 14GHz. FMA246-000SQ FMA246-000 FMA246-000S3 DS110503 PDF