smd marking m11
Abstract: M6 SMD MARKING CODE
Text: 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 Units 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns fCK MAX. • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command
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39S16400/800/160CT-8/-10
cycles/64
P-TSOPI-44
400mil
P-TSOPII-50
PC100
P-TSOPII-50
GPX05956
smd marking m11
M6 SMD MARKING CODE
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39S16802AT-10
Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation
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HYB39S1640x/80x/16xAT-8/-10
16MBit
39S16802AT-10
Q67100-Q1279
marking t8
smd CAY
Q67100-Q1323
Q67100-Q1327
Q67100-Q1333
Q67100-Q1335
P-TSOPII-44
BX-4T
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9633E
Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
Text: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS
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Original
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PDF
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982e-01
814e-01
677e-01
602e-01
570e-01
640e-01
828e-01
126e-01
528e-01
027e-01
9633E
3107E-01
3520E-11
805E-01
853e
HYB39S64800T
max 8734E
1600E-03
SIEMEMS
transistor 702E
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hyb39s16
Abstract: marking smd wmf CAY smd marking code
Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge
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HYB39S16400/800/160BT-8/-10
16MBit
P-TSOPI-44
400mil
PC100
hyb39s16
marking smd wmf
CAY smd marking code
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P-TSOPII-44
Abstract: CAZ MARKING AZ2 marking
Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •
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PDF
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HYB39S16400/800/160BT-8/-10
16MBit
P-TSOPI-44
400mil
PC100
P-TSOPII-44
CAZ MARKING
AZ2 marking
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39S16800AT-8
Abstract: smd marking m11 Q67100-Q1323 Q67100-Q1333 Q67100-Q1335 39S16800T 39S16800AT-10 smd marking code M11 smd code m6
Text: 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 • Multiple Burst Read with Single Write Operation -8 -10 Units fCK 125 100 MHz • Automatic and Controlled Precharge Command
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39S16400/800/160AT-8/-10
cycles/64
P-TSOPII-50
GPX05956
39S16800AT-8
smd marking m11
Q67100-Q1323
Q67100-Q1333
Q67100-Q1335
39S16800T
39S16800AT-10
smd marking code M11
smd code m6
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SEM t11
Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command
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OCR Scan
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PDF
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HYB39S1640x/80x/16xAT-8/-10
16MBit
P-TSOPI-44
400mil
SEM t11
39S16800
39S16800AT-8
Q1323
q1333
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Untitled
Abstract: No abstract text available
Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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OCR Scan
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PDF
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HYB39S16400/800/160CT-8/-10
16MBit
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smd marking KH
Abstract: P-TSOPII-44
Text: HYB39S16400/800CT-8/-10 16MBit Synchronous DRAM S IE M E N S 16 MBit Synchronous DRAM fourth generation Preliminary Information • • • • • • • • High Performance: -8 -10 Units fC K (m ax.) 125 100 MHz tC K 3 8 10 ns tA C 3 6 7 ns tC K 2 10
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OCR Scan
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PDF
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YB39S16400/800CT-8/-10
16MBit
P-TSOPII-44
400mil,
16-to
tsop-44
smd marking KH
P-TSOPII-44
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Q67100-Q1279
Abstract: 39516800 39S16800AT-8 39516800AT-10
Text: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic
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OCR Scan
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PDF
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HYB39S1640x/80x/16xAT-8/-10
16MBit
P-TSOPI-44
400mil
Q67100-Q1279
39516800
39S16800AT-8
39516800AT-10
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FCK2A
Abstract: No abstract text available
Text: SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 /cK MAX • HYB 39S16400/800/160CT-8/-10 125 • -10 Units • Automatic and Controlled Precharge Command 100 MHz ?CK3 8 10 !AC3 6 ?CK2 10 12 ns ?AC2 6 8 ns 7 Multiple Burst Read with Single Write
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OCR Scan
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PDF
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39S16400/800/160CT-8/-10
cycles/64
fl235b05
FCK2A
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Untitled
Abstract: No abstract text available
Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM SIEMENS 16 M Bit S yn c h ro n o u s DRAM A dvan ced In form atio n • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge
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OCR Scan
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PDF
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HYB39S16400/800/160BT-8/-10
16MBit
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 Multiple Burst Read with Single Write Operation -8 -10 Units 125 100 MHz Automatic and Controlled Precharge Command
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OCR Scan
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PDF
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39S16400/800/160AT-8/-10
cycles/64
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SS35L
Abstract: smd marking YB Q67100-Q1244 AAFL1
Text: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8
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OCR Scan
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PDF
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0235bOS
SS35L
smd marking YB
Q67100-Q1244
AAFL1
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3165805AT-60
Abstract: Q67100
Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60
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OCR Scan
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PDF
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3116160BSJ-50
311616QBSJ-60
3116160BSJ-70
3116160BST-50
3116160BST-60
3116160BST-70
3116165BSJ-50
3116165BSJ-60
3116165BSJ-70
3116165BST-50
3165805AT-60
Q67100
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39S16800AT-8
Abstract: 39S16800AT-10
Text: SIEMENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information High Performance: -8 -10 Units /CK 125 100 MHz Automatic and Controlled Precharge Command CO Multiple Burst Read with Single Write Operation o • 8 10 ns
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OCR Scan
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PDF
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39S16400/800/160AT-8/-10
cycles/64
P-TSOPII-44-1
P-TSOPII-50-1
39S16400/800/160AT-8/-10
GPX05956
39S16800AT-8
39S16800AT-10
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SMD marking s07
Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
Text: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge
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OCR Scan
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PDF
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39S16400/800/160CT-8/-10
fl235b05
SMD marking s07
smd marking YB
smd marking T22
smd code Yj 33
1t211
39S16400
JEM AC3
ml 721 T1-1
P-TSOPII-44
SP 1191
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Untitled
Abstract: No abstract text available
Text: SIEMENS 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns Multiple Burst Read with Operation Automatic Command and Controlled Single Write Precharge Data Mask for Read / Write control x4, x8
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OCR Scan
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PDF
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fl235b05
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