Junction to case for DC for 2n2919
Abstract: 2N2919 md7002 MD7002A
Text: MOTOROLA SC XSTRS/R i¿E q | fe,3b7254 QGflbSt.G 5 | F M AXIM U M RATINGS Symbol Value Unit Coliector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc 'c 30 mAdc Rating Collector Current — Continuous Total Device Dissipation
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3b7254
MD7002,
MD7002A
MD7002B
MD7002B
Junction to case for DC for 2n2919
2N2919
md7002
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SC 3044
Abstract: et 3045
Text: MOTOROLA SC {XSTRS/R 6367254 F> Tb M OT O R O L A SC XSTRS/R D eT | L>3b7254 F 00053^1 96D 82391 D r - ^ - T - 7 2N3043 thru 2N3045 2N3048 M A XIM U M RATINGS CASE 610A-04, STYLE 1 Sym bol V alue Unit Collector-Emitter V oltage VCEO 45 V dc Collector-Base V oltage
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3b7254
2N3043
2N3045
2N3048
10A-04,
2N3044
SC 3044
et 3045
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TRANSISTOR c801
Abstract: PT9785 Stackpole ferrite arco 467 CL-425 A723
Text: j'- S S -jÇ ' 12E 0 § fc>3b7254 GDââlbb fl | MOT OROL A SC MOTOROLA XSTRS/R F SEM ICO N D U CTO R TECHNICAL DATA PT9785 The RF Line S S B Pow er Transistor . designed primarily for wideband, large-signal output and driver amplifier stages In the 2 to 30 MHz frequency range.
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PT9785
10/iH
A723-1838.
TRANSISTOR c801
PT9785
Stackpole ferrite
arco 467
CL-425
A723
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2hE D t>3b7254 GOiOSST MOTOROLA h r r -V i-iS SEMICONDUCTOR! TECHNICAL DATA PRELIMINARY DATA DM0 mini MRH630PHXV, MRH630PHS PR O C ESSED TO MIL-S-19500 RADIATION TOLERANT TRANSISTOR 30 VOLT, 3 AM PERE Discrete Military Operation BIPOLAR PNP
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3b7254
MRH630PHXV,
MRH630PHS
MIL-S-19500
fa3L7E54
T-31-/5
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2N3726
Abstract: 2N3726 motorola
Text: MOTOROLA SC XSTRS/R F 12E D I fc,3b7254 0 a a t , 3 S cJ T | M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VcBO 45 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Base Current Ib 100 mAdc Collector Current — Continuous
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3b7254
2N3726
2N3727
2N3726 motorola
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BC317B
Abstract: BC317A
Text: MOT OROL A SC X S TR S/ R F 12E D | k.3b7254 0005041 5 | M A X IM U M RATINGS Unit Symbol Value Collector-EmiUer Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 50 • Vdc Emitter-Base Voltage Rating Ve b o 6.0 Vdc Collector Current — Continuous ic 100 mAdc
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3b7254
BC317A
BC317B
X10-4
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2N6428
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R 12E D I F fe,3b7254 QOaSf lE] , M A X I M U M R A T IN G S Sym bol V a lu e C otle c tor-E m itte r V o ltag e R a ting VCEO 50 U n it Vdc Collector-B ase V o lta g e VCBO 60 V dc E m itter-B ase V o ltag e Ve b o 6 .0 V dc C ollec to r C u rre n t — C ontin uous
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3b7254
2N6428
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TP3024A
Abstract: transistor 355 uhf amplifier design Transistor 35 W 960 MHz RF POWER TRANSISTOR NPN motorola rf Power Transistor Gan on silicon transistor Gan transistor MOTOROLA POWER TRANSISTOR for power amplifier
Text: MOTOROLA SC X S T R S / R F 4bE D • fc>3b7254 D O T S S l b MOTOROLA T ■ FIOTb »“’3 3 - 11 ■ SEM ICO NDUCTOR TECHNICAL DATA TP3024A Advance Inform ation The RF Line UHF Linear Power Transistor 35.5 W — 960 M H z UHF LINEAR POWER TRANSISTOR
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F33-11
TP3024A
transistor 355
uhf amplifier design Transistor
35 W 960 MHz RF POWER TRANSISTOR NPN
motorola rf Power Transistor
Gan on silicon transistor
Gan transistor
MOTOROLA POWER TRANSISTOR for power amplifier
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NS 8002 1151
Abstract: MQ3251A
Text: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)
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3b7254
MIL-S-19500/323
O-116)
NS 8002 1151
MQ3251A
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MTP10N10M
Abstract: Current Mirror FET Motorola 3-326 transistor mosfet current mirror sensefet 25CC AN569 MC33034 MC34129 MM614
Text: MOTOROLA SC XSTRS/R F bêt D • fc,3b7254 DGTft 72G 771 « f lO T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP10N10M Advance Information P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate w ith Current Sensing Capability
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MC34129
MTP10N10M
Current Mirror FET
Motorola 3-326 transistor
mosfet current mirror
sensefet
25CC
AN569
MC33034
MC34129
MM614
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MRFQ17
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F L.3b7254 010DÖ34 IMOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable fo r use as a Class A, B or C output driver or
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3b7254
IS21I
IS12I
MRFQ17
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Scans-007982
Abstract: 714g 714G-01 CR2425 CR2424 CR2424H CR2424R 90 HYBRID 70 mhz rf power
Text: MOTOROLA SC XSTRS/R F 4bE D • L>3b7254 □0^5512 3 MMOTb T -n*4-cn-o\ MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA C R 2424 C R 2424H C R 2425 i The RF Line Video Driver Hybrid Am plifiers . . . designed specifically for use as the video channel final stage in high resolution
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CR2424R
CR2425R.
b3b7254
Temperatur25
Scans-007982
714g
714G-01
CR2425
CR2424
CR2424H
90 HYBRID 70 mhz rf power
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Untitled
Abstract: No abstract text available
Text: 12E D I b3fc>7554 0000115 Ö | MOTORO LA SC MOTOROLA XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA M R T 0 1 05-75 The RF Line UHF Power Transistor . designed primarily for wideband, large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.
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T39 diode
Abstract: No abstract text available
Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,
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3b7254
IRFZ34/D
C65M2
IRFZ34
T39 diode
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IR 92 0151
Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8
Text: MOTORCLA SC XSTRS/R F 12E D | fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection
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MJ12002
14-MAXIMUM
IR 92 0151
MJ12002
MJ-12002
TC204A
4229PL00-3C8
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MTW8N50E
Abstract: MOTOROLA N-Channel MOSFET motorola power FET
Text: MOTOROLA SC XSTRS/R F bflE D • b3b?SSH DG' I ßfi a? SSb ■ MOTb M OTOROLA ■i SEMICONDUCTOR TECHNICAL DATA Advance Information MTW8N50E TMOS E-FET Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancem ent-Mode Silicon G ate
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MTP3055EL
Abstract: MTP-3055EL 221A-06 AN569
Text: MO T O R O L A SC XSTRS/R F bflE D • b3fc.725M GGTÖßS? TD7 MOTOROLA ■ i SEMICONDUCTOR TECHNICAL DATA M TP3055EL Designer's Data Sheet Motorola Preferred Device T M O S IV P o w er Field E ffe c t T ransistor N-Channel Enhancem ent-Mode Silicon Gate
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MTP3055EL
MTP3055EL
MTP-3055EL
221A-06
AN569
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552 MOSFET TRANSISTOR motorola
Abstract: 552 transistor motorola Z71A
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w
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BUZ71
BUZ71A
b3b725M
552 MOSFET TRANSISTOR motorola
552 transistor motorola
Z71A
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B44 transistor
Abstract: fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed fo r high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
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IRF840
IRF840
fcj3b7254
G1G2742
B44 transistor
fet IRF840
TRANSISTOR mosfet IRF840
mosfet b44
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017Q
Abstract: MOTOROLA TRANSISTOR 210
Text: MOTOROLA SC XSTRS/R F MbE D b3b?254 00*^73 b inoTt MOTOROLA Order this data sheet by MRA1618-35H/D SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power Transistor . . . designed primarily for wideband, large signal output and driver amplifier stages in the
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MRA1618-35H/D
MRA1618-35H
017Q
MOTOROLA TRANSISTOR 210
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TMS 3727
Abstract: MRF9511ALT1 sot-23 marking 7z RF9511 Motorola 8039 TMS 3748 MARKING T21 SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors . . . designed for use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951
MRF951
MRF957
RF9511
OT-23
MMBR951LT1,
MMBR951ALT1,
MRF951
MRF957T10
MRF957T1,
TMS 3727
MRF9511ALT1
sot-23 marking 7z
Motorola 8039
TMS 3748
MARKING T21 SOT23
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MRW2005
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pow er Transistors MRW2001 MRW 2005 Designed prim arily for large-signal output and driver am plifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for C lass B o r C, Comm on Base Power Amplifiers
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MRW2001
MRW2005
b3b7254
D107321
3b7254
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Untitled
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM
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cr122
340F-03
O-247)
O-251)
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BUZ71L
Abstract: BUZ-71L T39 diode S3848 Z71L
Text: MOTOROLA SC XSTRS/R F (□3b7254 5bE.D Q D T C HC m b Order this data sheet by BUZ71L/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA BU Z71L MTP14IM05L Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silico n Gate These T M O S Pow er FETs are designed for low voltage,
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3b7254
BUZ71L/D
MTP14IM05L
BUZ71L
BUZ71L
BUZ-71L
T39 diode
S3848
Z71L
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