BD785
Abstract: bd786 BD787 bd788 B0786 B0788 Motorola BD785 b0787 60VOLTS NPN, Si, POWER TRANSISTOR, PLASTIC
Text: motorola sc xstrs / r 15E f D I fc,3b72S4 G G f l4 7 4cl 1 | NPN MOTOROLA BD785, BD787 SEM ICO N D U CTO R PNP TECHNICAL DATA BD786, BD788 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS . , . designed for low power audio amplifier and low current, high
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3b72s4
BD785,
BD787
BD786,
BD788
BD786
BD787,
60VOLTS
BD785
BD787
bd788
B0786
B0788
Motorola BD785
b0787
NPN, Si, POWER TRANSISTOR, PLASTIC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F SbE D • fc.3b72S4 QCH0537 5 ■ MOTOROLA SEMICONDUCTOR mmmimmmmmi TECHNICAL DATA I£ "T 1 PRELIMINARY DATA MRH1230PHXV, MRH1230PHS D PR O C ESSED TO MIL-S-19500 O m im RADIATION TOLERANT TRANSISTOR 30 VOLT, 6 AM PERE U Discrete Military
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3b72S4
QCH0537
MRH1230PHXV,
MRH1230PHS
MIL-S-19500
b3b7254
00T0S3fl
T-37-/S
MRH630PHXV
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Untitled
Abstract: No abstract text available
Text: MOTOROL A SC X S TR S/R F 1SE D | fc>3b72S4 OOöhSSl 1 | M A X I M U M R A T IN G S Sym bol Value Collector-Emitter Voltage VcEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Rating Unit Ve b o 4.0 Vdc Collector Current — Continuous 'C 50
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3b72S4
IMD4261
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3B2S
Abstract: MRF428
Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power
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3b72S4
MRF428
T--33--13
3B2S
MRF428
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Ferroxcube core
Abstract: PT8864 PT8864A VK21107-3B C3-250
Text: 15E O I fc,3b72S4 000013^ S I MO TOR OLA SC MOTOROLA r- XSTRS/R F SEMICONDUCTOR TECHNICAL DATA PT8864 PT8864A The RF Line NPN Silicon VHF Pow er Transistors . . . designed for 12,5 Volt, mid-band large-signal amplifier applications in industrial and com m ercial FM equipm ent operating in the 40 to 100 MHz range.
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PT8864
PT8864A
16AWG,
VK211-073B
Ferroxcube core
PT8864A
VK21107-3B
C3-250
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cr8s motorola
Abstract: MTM2N50 AN569 N250 mtp2n mtp2n50 transistor
Text: MOTOROLA SC XSTRS/R F bflE D fc>3b72S4 ÜO^ f l S4 7 052 M OTOROLA • SEMICONDUCTOR H TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C hannel Enhan cem en t-M ode S ilic o n Gate TMOS ROWER FET 2 AMPERES RDS(on) = 4 OHMS
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s400\
cr8s motorola
MTM2N50
AN569
N250
mtp2n
mtp2n50 transistor
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mt 1389 de
Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Text: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B
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3b72S4
MM3735
MM3737
MIL-S-19500/395B
O-116)
mt 1389 de
mt 1389 de ic
NS 8002 1151
mt 1389 de motorola
2N3737
2N3735
TO-206AB
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bfl 177
Abstract: IR 92 0151 motorola 600 ssd MTP2N50 mosfet ssd
Text: MOTOROLA SC M O TO R O LA XSTRS/R F bfl E ]> • fc>3b72S4 ÜO' îflSM? 052 ■MOTf c. ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2 AMPERES RDS(on) = 4 OHMS
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3b72S4
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
bfl 177
IR 92 0151
motorola 600 ssd
MTP2N50
mosfet ssd
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed
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3b72S4
CHflb24
MTP1N50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
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sot89 m
Abstract: LA2927
Text: MOTOROLA SC XSTRS/R F a^D D MOTOROLA S E M IC O N D U C T O R f c>3b72S4 P07T T 2Ô =i Order this data sheet by M X V109/D T~" 0 * 7 -/ f TECHNICAL DATA M X V 109 S ilic o n T u n in g D io d e . designed for electronic tuning of A M receivers and high capacitance, high tuning
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3b72S4
V109/D
OT-89
MK145BP,
F--10
MXV109
sot89 m
LA2927
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2N3495
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F b * E fc>3b72S4 ]> □ □ ‘m a ' i T^2 M A X IM U M RATINGS Rating Symbol Value Unit Em itte r-C o lle cto r V oltage v CEO -1 2 0 V dc Co lle ctor-B ase V oltag e v CBO -1 2 0 V dc Em itter-Base V oltag e VebO - 4 .5 V dc C o lle c to r Current — Co ntinu ou s
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3b72S4
2N3495
2N3495
O-205AD)
2N3497
2N3497
O-206AA)
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bsw68a
Abstract: BSW67A MOTOROLA
Text: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C
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t-3b72S4
BSW67A
BSW68A
BSW68A
BSW67A MOTOROLA
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mmbc1623l6
Abstract: L6 MMBC1623L6 transistor 6D sot23 MPS3904 transistor
Text: M O T O R O L A SC -CXSTRS/R F> 8367254 MOTOROLA SC ^ »F|t,3b72S4 CXSTRS/R F M A X IM U M R A T IN G S 9 6D 81990 f Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Vebo 5.0 Vdc ic 100 mAdc
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3b72S4
MMBC1623L3
OT-23
O-236AA/AB)
MMBC1623L4
MMBC1623L5
MMBC1623L6
MMBC1623L7
L6 MMBC1623L6
transistor 6D sot23
MPS3904 transistor
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MOTOROLA POWER TRANSISTOR
Abstract: TP2033 motorola rf Power Transistor TRANSISTOR A 225
Text: MOTOROLA SC X S T R S / R F 4bE D • b3b7254 00*15172 5 « n O T b 'T-33 -'Oa\ MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA TP2033 Advance Inform ation The RF Line V H F P o w e r T ran sisto r 30 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2033 has been specifically designed and characterized fo r 12.5 V operation in
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b3b7254
TP2033
TP2033
145D-01,
Va2033
T-33-09
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
TRANSISTOR A 225
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MJ16016
Abstract: J160 MJ16014 npn 3778
Text: I : MOTOROLA SC XSTRS/R F 12E 0 | OGaSEM MOTOROLA T | MJ16014 MJ16016 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 20 A M P E R E NPN SILICON POWER T R A N SISTO R S SW ITCHM ODE III SERIES NPN SILICON POWER TRANSISTORS 4 5 0 V O LT S
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MJ16014
MJ16016
MJ16016
MJ16014for
P-6042
J160
npn 3778
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D10N2
Abstract: marking dC
Text: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak
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MRF10070H*
1PHX312SO-1
MRF10070H/D
3b72S4
D10N2
marking dC
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TRW3001
Abstract: 3005F ax 3003
Text: MOT OR OL A SC XSTRS/R F 12E 0 | t3t?2SM 0000305 Ì | T -3 i~ C \ MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW3000 Series The RF Line M ic r o w a v e P o w e r T r a n sisto rs 5 TO 7 dB 1.5-3 GHz 1 TO 5 W A T T S M IC R O W A V E PO W ER T R A N S IS T O R S
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TRW3000
TRW3001
3005F
ax 3003
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TPM4040
Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Text: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially
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TPM4040
1N4007
TPM4040
T-33-27
ITT 1N4007
BALLAST MOTOROLA
TRANSISTOR UO 112
motorola rf Power Transistor
1N4007, ITT
1N4007 DC COMPONENTS
tantal PACKAGE
1N4007 itt
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2N3741 MOTOROLA
Abstract: 2N3740 motorola
Text: MOTOROLA SC XSTRS/R F 12E D | b3fc,7aSM üOñMMflb MOTOROLA b I 2N3740 2N3741,A SEMICONDUCTOR TECHNICAL DATA POWER TRANSISTORS MEDIUM-POWER PNP TRANSISTORS P N P S IL IC O N . . . ideal for use as drivers, switches and medium-power amplifier 6 0 -8 0 VO LTS
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2N3740
2N3741
3b72S4
2N3740,
2N3741 MOTOROLA
2N3740 motorola
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md918
Abstract: M559-01 md918 Transistor MD708B MD918A M559-02 MD708 M0708B MD708AF MD708F
Text: MOTOROLA SC - C X S TR S /R F> T b 6367254 MOTOROLA XSTRS/R SC DE^b3b?254 0002414 96D 8 2 4 1 4 F 4 D'T A 3 ~ ¿ b M A X IM U M RATINGS Symbol Value Unit VCEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage veb 6.0 Vdc Rating Collector-Emitter Voltage
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m559-01
m559-02
MD918
md918 Transistor
MD708B
MD918A
MD708
M0708B
MD708AF
MD708F
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MJ8502
Abstract: MJ8503 J8503 1N4934 AN-222 MJE200 Avalanche B00 J850
Text: MOTO R O L A SC XSTRS/R 12E 0 § b3b72SM 0004^^7 ^ | F i~ MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 5 .0 A M P E R E NPN SILICON POWER TRANSISTORS SW IT C H M O D E S E R IE S NPN S IL IC O N POW ER T R A N S IS T O R S
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b3b72SM
MJ8502
MJ8503
Time-25Â
J8503
1N4934
AN-222
MJE200
Avalanche B00
J850
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motorola MRF171
Abstract: mrf171 Helipot "RF MOSFETs" AN721 AN215A 0832
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF171,
MRF171
AN215A
3b72S4
motorola MRF171
Helipot
"RF MOSFETs"
AN721
0832
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mg50bz100
Abstract: No abstract text available
Text: 6367254 MOTOROLA SC CXSTRS/R F "Tt dF | tz.3t.7ESM ODfllM?! D u r o e r ^ n is data sheet MOTOROLA I - 3 3 SE M IC O N D U C T O R ' 0 ^ 7 by M G 5 0 B Z1 0 0 /D TECHNICAL DATA MG50BZ100 Iso la te d G a te B ip o la r P o w e r T ra n sisto r M o d u le Energy M an age m e n t Series
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MG50BZ100
K145BP,
C52267
mg50bz100
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BD807
Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Text: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
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G0fi47til
BD805
BD809
BD806
BD807
Temperatu03
AN-415)
transistor 1127
PJ 0446
pj 809
ADC ic adc 809
pj 807
MOTOROLA transistor 413
ADC 808
adc 809
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