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    3F40 Search Results

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    3F40 Price and Stock

    TE Connectivity CPF0603F40K2C1

    RES SMD 40.2K OHM 1% 1/16W 0603
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    DigiKey CPF0603F40K2C1 Reel 21,000 1,000
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    Newark CPF0603F40K2C1 Cut Tape 101 1
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    Avnet Abacus CPF0603F40K2C1 11 Weeks 1,000
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    Sunlord SDNT1005X303F4050HTF

    THERM NTC 30KOMH 4050K 0402
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    DigiKey SDNT1005X303F4050HTF Digi-Reel 18,830 1
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    SDNT1005X303F4050HTF Cut Tape 18,830 1
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    SDNT1005X303F4050HTF Reel 10,000 10,000
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    Panasonic Electronic Components ERJ-UP3F4020V

    RES 402 OHM 1% 1/4W 0603
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    DigiKey ERJ-UP3F4020V Cut Tape 7,388 1
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    ERJ-UP3F4020V Digi-Reel 7,388 1
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    ERJ-UP3F4020V Reel 5,000 5,000
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    Bourns Inc SF-0603F400-2

    FUSE BOARD MOUNT 4A 32VDC 0603
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    DigiKey SF-0603F400-2 Reel 5,000 5,000
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    Newark SF-0603F400-2 Cut Tape 2,987 10
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    NXP Semiconductors UJA1132AHW-3F4-0Y

    UJA1132AHW/3F4/0Y
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    DigiKey UJA1132AHW-3F4-0Y Reel 1,500 1,500
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    UJA1132AHW-3F4-0Y Digi-Reel 1,500 1
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    UJA1132AHW-3F4-0Y Cut Tape 1,500 1
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    3F40 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3F40 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    3F40 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    3F40 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    3F40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    PDF W19B320AT/B w19b320

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    PDF W28J320B/T 16/4M

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: DAC8165 DA C8 165 www.ti.com . SBAS409A – FEBRUARY 2008 – REVISED FEBRUARY 2008 14-Bit, Quad Channel, Ultra-Low Glitch, Voltage Output


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    PDF DAC8165 SBAS409A 14-Bit, DAC8165 14-bit

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    PDF 3582B AT49BV322D AT49BV322DT AT49BV

    DAC7564

    Abstract: DAC7565 DAC8164 DAC8165 DAC8564 DAC8565 TSSOP-16
    Text: DA DAC8165 C8 165 SBAS409B – FEBRUARY 2008 – REVISED MARCH 2011 www.ti.com 14-Bit, Quad Channel, Ultra-Low Glitch, Voltage Output Digital-to-Analog Converter with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC8165 FEATURES DESCRIPTION • Relative Accuracy: 1LSB


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    PDF DAC8165 SBAS409B 14-Bit, 15nV-s 14-Bit DAC7564 DAC7565 DAC8164 DAC8165 DAC8564 DAC8565 TSSOP-16

    edi PB60

    Abstract: mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15
    Text: Suites 2202-7, 22/F, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel 852 2123 3289 Fax (852) 2123 3393 E-mail: [email protected] HomePage: http://www.jesstech.com WT5082 V0.97 DESCRIPTION The WT5082 is a high-performance, low-cost, CMOS 8-bit single-chip micro-controller with POCSAG


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    PDF WT5082 WT5082 decoder12KB 296KB 56x32 56x33 x55y25 x55y24 x07y32 x06y32 edi PB60 mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15

    cxm8

    Abstract: xsxx 05F4 05611 333c 4N 3SM G7M datasheet RSFX 3F40
    Text: &101$=>-0?$@-A"$! &-B-%C-:$' ! !"#$µ µ%$&'#( *+,-$&./.012 345210-6$&78$914-:$;56<27-10<:-4 • !"#$%&'#$()*+#,-'.),/*.'#*& ■ 012345067)-*8+'#,9.$):+)#*)1;<=>504?<@A ■ ■ N*F)(,/+$&/,*")+$"'.#O)C*&).*"%<&$'-B)'"() $P#$"($(<&$'-B)'+.,-'#,*"/ ■ !"(:/#&O</#'"('&(D)@=<+,")9:##$&C.O)+'-K'%$


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    PDF

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    PDF DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


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    PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    mx29lv320ttc

    Abstract: MX29LV320T Q0-Q15 SA10
    Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


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    PDF MX29LV320T/B 32M-BIT 200nA 10-year 64K-Byte FEB/10/2003 MAR/26/2003 APR/23/2003 JUL/04/2003 mx29lv320ttc MX29LV320T Q0-Q15 SA10

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    28F256L30

    Abstract: 28F128L30 28F640L30
    Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode


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    PDF 28F640L30, 28F128L30, 28F256L30 50MHz 16K-Word 64K-Word com/design/flcomp/packdata/298049 28F256L30 28F128L30 28F640L30

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION


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    PDF IS71VPCF32XS04 73-ball CF32ES04-8570BI IS71VPCF32FS04-8570BI IS71VPCF32AS04-8585BI IS71VPCF32BS04-8585BI IS71VPCF32CS04-8585BI

    DL322

    Abstract: DL323 DL324
    Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features


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    PDF Am41DL32x4G 16-Bit) 8-Bit/256 73-Ball FLB073--73-Ball DL322 DL323 DL324

    SA70

    Abstract: 22a17
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V


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    PDF DS05-50207-4E MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 71-ball SA70 22a17

    324T

    Abstract: 2MWx16bit
    Text: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C


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    PDF MX69LW322/324T/B 32M-BIT X8/X16] X8/X16) 70/90ns 70/85ns AuP44 APR/17/2002 APR/18/2002 MAY/31/2002 324T 2MWx16bit

    Untitled

    Abstract: No abstract text available
    Text: PUMA 3F4003 m o la ic PUMA 3F4003-12/15/20 Issue 1.0 : March 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module Pin Definition Features 1 12 23 O o o O o o O o o O o o o o o o o o o o o o o o o o o o o o o o o


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    PDF 3F4003 3F4003-12/15/20 10styp) A0-A16 3F4003I-12

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC 40E D ^ b B S B a ? 11! 0 0 0 0 4 7 ^ M SMOC r-V4~l3-'27 PUMA 3F4003 PUMA 3F4003-12/15/20 Issue 1.0 : March 1991 Mosaic Semiconductor ADVANCE PRODUCT INFORMATION Inc. 4,194,304 bit CMOS FLASH Memory Module Pin Definition Features Block Diagram


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    PDF 3F4003 3F4003-12/15/20 3F4003I-12 CA92121

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    PDF Am29DL32xC 16-Bit) 29DL32xC L323C

    TDD 1605

    Abstract: lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S PLCC44 SEL24 STLC3040
    Text: STLC3040 S U BSC R IBER LINE INTERFACE CODEC FILTER, CO FISLIC PRELIM IN ARY DATA PLCC44 O RDERING NUM BER: STLC3040FN Figure 1 : Pin Connection Top view o > [ « [ <° \ Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­


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    PDF STLC3040 PLCC44 TDD 1605 lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S SEL24 STLC3040

    MD-720-3

    Abstract: srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga
    Text: CL-GD7548 * ’CIRRUS LOGIC9 A d v a n c e H a rd w a re Reference M a n u a l FEATURES • Single-chip XGA/Super VGA LCD controller — Pin-compatible superset of CL-GD7541/7543 SVGA LCD controllers G U I-A ccelerated X G A /S V G A LCD C on troller w ith Low -C ost M ultim edia


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    PDF CL-GD7541/7543 16-bit MD-720-3 srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga