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    Abstract: No abstract text available
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG15N06S3L-45 Product Summary V DS 55 V 2 x 45 mΩ R DS on ,max5) ID 15 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPG15N06S3L-45 3N03L45

    IPG15N06S3L-45

    Abstract: 3n03 PG-TDSON-8-4
    Text: IPG15N06S3L-45 OptiMOS -T Power-Transistor Product Summary V DS 55 V 2 x 45 mΩ R DS on ,max5) ID 15 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG15N06S3L-45 3N03L45 IPG15N06S3L-45 3n03 PG-TDSON-8-4