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    3N06 Search Results

    3N06 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    NP33N06YDG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, HSON, /Embossed Tape Visit Renesas Electronics Corporation
    NP33N06YDG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP23N06YDG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP23N06YDG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, HSON, /Embossed Tape Visit Renesas Electronics Corporation
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    3N06 Price and Stock

    onsemi FQU13N06LTU-WS

    MOSFET N-CH 60V 11A IPAK
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    DigiKey FQU13N06LTU-WS Tube 23,558 1
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    Newark FQU13N06LTU-WS Bulk 957 1
    • 1 $1.32
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    Rochester Electronics FQU13N06LTU-WS 3,960 1
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    Flip Electronics FQU13N06LTU-WS 10,080
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    Renesas Electronics Corporation NP23N06YDG-E1-AY

    MOSFET N-CH 60V 23A 8HSON
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    DigiKey NP23N06YDG-E1-AY Reel 7,500 2,500
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    Avnet Silica NP23N06YDG-E1-AY 20 Weeks 2,500
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    Renesas Electronics America NP23N06YDG-E1-AY Tape & Reel (TR) 7,500 2,500
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    Vishay Siliconix SUD23N06-31-GE3

    MOSFET N-CH 60V 21.4A TO252
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    DigiKey SUD23N06-31-GE3 Cut Tape 7,246 1
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    SUD23N06-31-GE3 Digi-Reel 7,246 1
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    SUD23N06-31-GE3 Reel 6,000 2,000
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    RS SUD23N06-31-GE3 Bulk 2,000
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    Micro Commercial Components MCAC5D3N06YHE3-TP

    MOSFET N-CH 60 75A DFN5060
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    DigiKey MCAC5D3N06YHE3-TP Reel 5,000 5,000
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    Vishay Siliconix SUD23N06-31L-T4-E3

    MOSFET N-CH 60V TO252
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    DigiKey SUD23N06-31L-T4-E3 Cut Tape 3,278 1
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    SUD23N06-31L-T4-E3 Digi-Reel 3,278 1
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    SUD23N06-31L-T4-E3 Reel 2,500 2,500
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    Find more 3N06 price and stock on Findchips.com

    3N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13N06

    Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
    Text: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6


    Original     		PDF ME4N20 ME4N20-F* ME8N06E O-252* 3N06E ME13NOGE-F* ME4P06 ME4P06-F* ME8P06 ME8P06-F* 13N06 8N06 13N06E 13-N06 13n0 4N20 ldo25 smd marking QTA

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06

    Untitled

    Abstract: No abstract text available
    Text: 3N06VL Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


    Original     		PDF MMDF3N06VL MMDF3N06VL/D

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L

    3N0625

    Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
    Text: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0625 IPI25N06S3-25 3N0625 ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2

    3N0607

    Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
    Text: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0607 IPI80N06S3-07 3N0607 IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004

    smd diode code F45

    Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
    Text: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0616 IPI45N06S3-16 smd diode code F45 ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23

    PG-TDSON-8-4

    Abstract: 3N06L23 3n06l IPG20N06S3L-23
    Text: IPG20N06S3L-23 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-23 3N06L23 PG-TDSON-8-4 3N06L23 3n06l IPG20N06S3L-23

    3N06L06

    Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 3N06L06 3N06L06 ANPS071E IPD50N06S3L-06 PG-TO252-3-11

    3N0607

    Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11
    Text: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3-07 PG-TO252-3-11 3N0607 3N0607 ANPS071E IPD50N06S3-07 PG-TO252-3-11

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2

    Untitled

    Abstract: No abstract text available
    Text: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 24.8 25 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 EIA/JESD22-A114-B PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI25N06S3-25

    N06CL

    Abstract: 3N06C diode ESM 182 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE TB334 742E-12
    Text: 3N06CLE, 3N06CLESM, 3N06CLE Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs July 1999 File Number 3948.5 Features • 0.30A, 60V [ /Title • rDS ON = 6.0Ω (RLD0 These are intelligent monolithic power circuits which


    Original     		PDF RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 150oC 3N06C RLD03 N06CL diode ESM 182 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE TB334 742E-12

    3N0607

    Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
    Text: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1


    Original     		PDF IPI80N06S3-07 IPP80N06S3-07 IPB80N06S3-07 IPP80N06S3-07 3N0607 BIPP80N06S3-07, 3N0607 ANPS071E IPB80N06S3-07 IPI80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2

    4n03

    Abstract: 1N04 BA 1N11
    Text: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs 概 要 AK5730 はDCエラー検出用SAR ADC内蔵の4チャンネルのA/Dコンバータです。ラインマイク入力に 対応し、マイクアレイアプリケーションに最適です。TDMオーディオフォーマットによりDSPと接続


    Original     		PDF AK5730] AK5730 65Vrms, 100dB MS1577-J-02 4n03 1N04 BA 1N11

    smd diode code F45

    Abstract: marking code D23 smd Diode smd code f45 3N0616 IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2
    Text: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 15.4 45 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02224 3N0616 smd diode code F45 marking code D23 smd Diode smd code f45 3N0616 IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2

    PG-TDSON-8-4

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-23 Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-23 3N06L23 PG-TDSON-8-4

    3N06L05

    Abstract: SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80N06S3L-05 PG-TO263-3-2 3N06L05 SMD MARKING CODE g23

    THB11

    Abstract: 4N06
    Text: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to


    Original     		PDF AK5730] AK5730 AK5730 65Vrms, 100dB 48kHz MS1577-E-02 THB11 4N06

    MMDF3N06VL

    Abstract: MMDF3N06VLR2
    Text: 3N06VL Product Preview Power MOSFET 3 Amps, 60 Volts N–Channel SO–8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


    Original     		PDF MMDF3N06VL r14525 MMDF3N06VL/D MMDF3N06VL MMDF3N06VLR2