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    Abstract: No abstract text available
    Text: 3SK106-2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)100m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)210m‚ Minimum Operating Temp (øC)


    Original     		PDF 3SK106-2