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Micro Commercial Components SK28-LTP Schottky Diodes & Rectifiers DIODE SCHOTTKY 80V 2A DO214AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SK28-LTP		42			1 $0.27 10 $0.184 100 $0.092 1000 $0.079 10000 $0.055	Buy Now
Toshiba America Electronic Components 3SK284
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	3SK284		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

3SK28 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
3SK28	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
3SK28	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
3SK28	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
3SK28	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
3SK28	Unknown	FET Data Book	Scan	PDF
3SK28	National Semiconductor	Shortform National Semiconductor Datasheet	Short Form	PDF
3SK28	Toshiba	Differential Amplifier Applications	Scan	PDF
3SK28	Toshiba	Japanese Transistor Data Book	Scan	PDF
3SK283	Toshiba	Field Effect Transistor GaAs N-Channel Dual Gate MOS Type	Scan	PDF
3SK283	Toshiba	N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)	Scan	PDF
3SK284	Toshiba	Field Effect Transistor GaAs N-Channel Dual Gate MOS Type	Scan	PDF
3SK284	Toshiba	N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)	Scan	PDF
3SK285	Panasonic	MOSFET: UHF RF Amp.	Scan	PDF
3SK286	Panasonic	Silicon MOS FETs	Scan	PDF

3SK288	Hitachi Semiconductor	Silicon N Channel Dual Gate MOS FET	Original	PDF
3SK28A	Toshiba	Japanese Transistor Data Book	Scan	PDF
3SK28/B	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
3SK28/G	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
3SK28M	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
3SK28/Y	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

3SK28 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3SK286 Abstract: 4-PIN MARKING Text: High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Small variation (∆Ciss) of the input capacitance during AGC operation ● Mini-type package, allowing downsizing of the sets and automatic	Original	3SK286 210MHz 3SK286 4-PIN MARKING	PDF
3sk285 Abstract: No abstract text available Text: 3SK285 High Frequency FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95	Original	3SK285 3SK302 3SK306 3SK302 800MHz 3sk285	PDF
3sk285 Abstract: No abstract text available Text: 3SK285 High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS 3SK301 For VHF amplification 1.5 –0.3 0.65±0.15 0.5R 0.95 1.9±0.2 4 1 3 2 +0.1 0.4 –0.05 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the conventional product.	Original	3SK285 3SK301 3SK305 3SK301 200MHz 3sk285	PDF
Untitled Abstract: No abstract text available Text: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95	Original	3SK285 3SK304 3SK308 3SK304 800MHz	PDF
Untitled Abstract: No abstract text available Text: High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG ● Small variation (∆Ciss) of the input capacitance during AGC operation	Original	3SK286	PDF
3SK286 Abstract: No abstract text available Text: High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 Unit VDS Symbol 15 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current	Original	3SK286 3SK286	PDF
3sk286 Abstract: No abstract text available Text: 3SK286 High Frequency FETs 3SK286 Silicon N-Channel MOS Unit : mm For VHF amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 ● Downsizing of sets by mini power package and automatic insertion 3 2 +0.1 Small variation (∆Ciss) of the input capacitance in AGC operation	Original	3SK286 190MHz 3sk286	PDF
3SK285 Abstract: No abstract text available Text: High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VDS 13 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID	Original	3SK285 3SK285	PDF
3SK285 Abstract: 4-PIN MARKING Text: High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.	Original	3SK285 800MHz 3SK285 4-PIN MARKING	PDF
Untitled Abstract: No abstract text available Text: 3SK285 High Frequency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N-Channel MOS 3SK303 For VHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95	Original	3SK285 3SK303 3SK307 3SK303 200MHz	PDF
3sk285 Abstract: No abstract text available Text: High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic	Original	3SK285 3sk285	PDF
3SK288 Abstract: transistor zo 107 Hitachi DSA00498 Text: 3SK288 Silicon N Channel Dual Gate MOS FET Application VHF TV tuner RF amplifier MPAK-4 Features 2 3 • Low nose figure. NF = 1.5 dB typ.at f = 200 MHz • High gain. PG = 28.5 dB typ.at f = 200 MHz 1 4 1. Source 2. Gate 1 3. Gate 2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C	Original	3SK288 SC-61AA 3SK288 transistor zo 107 Hitachi DSA00498	PDF
3SK284 Abstract: No abstract text available Text: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK284 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 v G2DO VG1S VG2S lGl <N Oi i— CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage	OCR Scan	3SK284 800MHz 3SK284	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3 s K2 84 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK284	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3 S K2 8 3 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK283	PDF
3sk284 Abstract: No abstract text available Text: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK284 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK284 3sk284	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK283	PDF
TRANSISTOR marking 789 code Abstract: No abstract text available Text: H ITACHI 3SK288-Silicon N Channel Dual Gate MOS FET Application V HF TV tuner RF amplifier MPAK-4 Features • Low nose figure. NF = 1.5 dB typ.at f = 200 MHz • High gain. PG = 28.5 dB typ.at f = 200 MHz 1. 2. 3. 4. Source Gate 1 Gate 2 Drain	OCR Scan	3SK288-------------Silicon 3SK288 SC-61AA TRANSISTOR marking 789 code	PDF
Q2SC Abstract: No abstract text available Text: Panasonic High Frequency FETs 3SK286 Silicon N-Channel MOS FET For VHF a m p lific a tio n unit: mm • Features 0 Low noise-figure NF 0 Large power gain PG 0 Small variation (ACiss) of the input capacitance during AGC operation 0 Mini-type package, allowing downsizing of the sets and automatic	OCR Scan	3SK286 Q2SC	PDF
Nf804 Abstract: 3SK284 Text: 3SK284 GaAs N CHANNEL DUAL GATE MES TYPE FIELD EFFECT TRANSISTOR U nit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC G ate 1-D rain V oltage G ate 2-D rain V oltage G ate 1-Source V oltage G ate 2-Source V oltage	OCR Scan	3SK284 Nf804 3SK284	PDF
3sk283 Abstract: Y025 Text: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 v G2DO VG1S VG2S lGl <N Oi i— CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage	OCR Scan	3SK283 800MHz 3sk283 Y025	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK283	PDF
3SK284 Abstract: tv circiut Text: TOSHIBA 3SK284 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK284 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK284 800MHz 3SK284 tv circiut	PDF
3sk283 Abstract: No abstract text available Text: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AM PLIFIER APPLICATIONS Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage Gate 1-Source Voltage Gate 2-Source Voltage	OCR Scan	3SK283 800MHz 3sk283	PDF

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3SK28 Datasheets (20)

3SK28 Datasheets Context Search

3SK286

3sk285

3sk285

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3SK286

3sk286

3SK285

3SK285

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3sk285

3SK288

3SK284

Untitled

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3sk284

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TRANSISTOR marking 789 code

Q2SC

Nf804

3sk283

Untitled

3SK284

3sk283