siemens 3tb44
Abstract: 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor
Text: 3RT, 3RH, 3TB, 3TC, 3TH, 3TK Contactors for Special Applications Contactors with Extended Tolerance 0.7 . 1.25 x Us , for Railway Applications 3RT10 motor contactors, 5.5 . 45 kW DC operation • DC solenoid system Screw terminals For screw and snap-on mounting onto standard mounting rail
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3RT10
483-0B.
503-0B.
523-0B.
543-0B.
563-0B.
683-0D.
693-0D.
3TK19
siemens 3tb44
3tb52
SIEMENS 3TH 82
catalog for 3RT series contactor* siemens
3TH43
siemens 3th42
3TH42
siemens contactor IEC 60947 VDE 0660
3TB44
siemens magnetic contactor
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catalog for 3RT series contactor* siemens
Abstract: catalog for 3tf series contactor* siemens 3RT siemens siemens contactor 3TF siemens magnetic contactor siemens contactor 3rt 3th42 siemens 3th42 catalog for 3RT Power contactor* siemens 3TB siemens contactor
Text: Controls – Contactors and Contactor Assemblies 3/2 3/4 3/8 3/30 3/31 3/34 3/35 3/38 3/43 3/46 3/53 3/54 3/55 3/56 3/58 3/61 3/62 3/64 3/66 3/67 3/68 3/69 3/73 3/74 3/75 Introduction 3RT, 3TB, 3TF Contactors for Switching Motors General data 3RT10 contactors, 3-pole, 3 . 250 kW
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3RT10
3RT12
3RA13,
3RA14
3RA13
46-3KF44-0LA0
catalog for 3RT series contactor* siemens
catalog for 3tf series contactor* siemens
3RT siemens
siemens contactor 3TF
siemens magnetic contactor
siemens contactor 3rt
3th42
siemens 3th42
catalog for 3RT Power contactor* siemens
3TB siemens contactor
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BDV64
Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Text: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general
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BDV64;
BDV64B;
711002b
T-33-3!
BDV65,
BDV64
7Z7749I-
philips BDV64A
bdv64b transistor
transistors BDV64B
bdv64s
BDV64B
BDV65
BDV64 C
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Y182
Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
Text: i BDV64; 64A _ I l BDV64B; 64C PHILIPS INTERNATIONAL SbE D • 711DÖ2b 0D43342 3Tb ■ PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general
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BDV64;
BDV64B;
0D43342
BDV64
-BDV64B:
711002b
T-33-31
Y182
transistor K 1413
bdv64
transistors BDV64B
BDV64B
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transistor T43
Abstract: BUK553-60A BUK553-60B
Text: N AMER PHILIPS/DISCRETE b^E » b b iB 'm □G3G7E1D 3TB • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK553-60A/B
t0220ab
BUK553-60A/B
transistor T43
BUK553-60A
BUK553-60B
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EUPEC DD 89
Abstract: EUPEC DD 600 RPER GDD1257 EUPEC powerblock
Text: EUPEC bl E ]> m 34Q35T? 0001555 3Tb •IUPEÇ 4>1 DD 89 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t»] - - 4 0 ° C .tvj max V rrm Stoßspitzenspannung
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tviS25Â
EUPEC DD 89
EUPEC DD 600
RPER
GDD1257
EUPEC powerblock
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Untitled
Abstract: No abstract text available
Text: N Af1ER PHILIPS/DISCRETE b'lE D hh53^3l □QSfl441 3Tb I IAPX BUT18F BUT18AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control
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QSfl441
BUT18F
BUT18AF
OT186
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Untitled
Abstract: No abstract text available
Text: S â fllb b Z G ÜEISbD 3Tb PRELIMINARY CY2278A Pentium and Pentium II™ Compatible Clock Synthesizer/Driver for Mobile PCs Features Functional Description • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirements of mo bile Pentium™ and Pentium II™ motherboards
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CY2278A
CY2278A
82430TX
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Untitled
Abstract: No abstract text available
Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)
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HLX6408
5x10srad
1x101
1x109
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JE13070
Abstract: No abstract text available
Text: File Number 1841 MJE13070, MJE13071 HARRIS SErilCOND SECTOR 5bE Î • 4302271 ODMGÒTl 3Tb H H A S 7 ^ 3 5 -/? 5-A S w itchM aif II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features:
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MJE13070,
MJE13071
O-220AB
92CS-39969
MJE13070
PW-300
MJE13071
JE13070
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2MB150L-120
Abstract: 2MB1200L-120 6MB150L-120 2mb1200 6MB150F 6MB115L-120 6MB125LB-120 1mb1300 1mb1300l-120 2mb1150
Text: m 22307^2 O O O B ^ T 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2M BI25F-120 2M BI50F-120 2M BI75F-120 2M BI100F-120 2M BI150F-120 SINGLES 1M BI200F-120 1M BI300F-120 VcE sat V ge =15V S w itching Tim e (Max.) lc Pc Cont.
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2MBI25F-120
2MBI50F-120
2MBI75F-120
2MBI100F-120
2MBI150F-120
1MBI200F-120
6MBI8L-120
6MBI15L-120
6MBI25L-120
6MBI25LB-120
2MB150L-120
2MB1200L-120
6MB150L-120
2mb1200
6MB150F
6MB115L-120
6MB125LB-120
1mb1300
1mb1300l-120
2mb1150
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IRL530
Abstract: No abstract text available
Text: 4ÛS54S2 001SÖS0 3Tb • INR International e Rectifier PD-9.562C IRL530 bSE J> INTERNATIONAL R E C T IF IE R HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature
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S54S2
IRL530
MflS54S2
IRL530
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Untitled
Abstract: No abstract text available
Text: m 22307^2 □ 0 D 3 ci cn 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2MBI25F-120 2MBI50F-120 2MBI75F-120 2MBI100F-120 2MBI150F-120 SINGLES 1MBI200F-120 1MBI300F-120 VcE sat V ge=15V Switching Time (Max.) lc Pc R th RTH VF
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M218B-120
6MBI50L-120
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Untitled
Abstract: No abstract text available
Text: b3E D m • 4302271 0D4A424 3Tb « H A S CA Series HARRIS S E M I C O N D U C T O R Industrial High Energy Metal-Oxide HARRIS SEP1IC0ND SECTOR _ Disc Varistors vaiismia August 1993 Features • Provided Unpackaged For Unique Packaging By Customer • Solderable Electrode Finish Also Provides Pressure Contacts for
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0D4A424
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2N3553
Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes
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bbS3T31
2N3375
2N3553
2N3632
2N3553
2N3375
2N3632
T0-60
ic 2n35 data
inductor 4312 020 36640
4312 020 36640
ic 2n35
Transistor 2n3375
2N35
2n3375 transistor
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FAH 23 LT
Abstract: 6810V 6730R E750R
Text: LEDTRONICS 27E D • 542370S 000034? 0 ■ '"pq\-3Tb C14.B2mm liS lT lm T i LEDTRONICS,Inc LEDTB D R X C S P R R T HD. LTD- DUAL DIG IT 7 SEGM ENT O.S6" NUMERIC DISPLAYS TELE:E13-B7B-7l»t1fc FAH* 213-676-0108 STD RED. HI-RED, HI-EFF RED/YELLOW/GREEN con.
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542370S
E13-B7B-7l
6710R
B710P
6610E
6H10G
6730R
MRNGR10
MHNBB10
MRNB810
FAH 23 LT
6810V
E750R
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BMR10
Abstract: 78Q8360-CGT HTR12
Text: SILICON SYSTEMS INC b lE ]> • f l SSB Tb S -T -1 5 -H 9 ¿ é m ó ifs k m 00D83D3 3Tb S S I 7 8 Q 8 3 6 0 Ethernet Controller/ ENDEC Combo s A TDK Group/Company Prelim inary Data December 1992 DESCRIPTION FEATURES The SSI 78Q8360 is a combination Media Access
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00D83D3
78Q8360
78Q8330
78Q902
10BaseT
1292-rev.
BMR10
78Q8360-CGT
HTR12
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Tater
Abstract: No abstract text available
Text: SflE D I N T E G R A T E D DE V I C E 4Û B S 7 7 1 CMOS STATIC RAM 256K 32K x 8-BIT D O l l b ö S 3Tb • IDT PRELIMINARY IDT71256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed CMOS static RAM • Equal access and cycle times
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4AB5771
IDT71256SA
17/20ns
15/17ns
MIL-STD-883,
28-pin
32-pin
ID71256SA
144-bit
200mV
Tater
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2n3375
Abstract: 2n3375 transistor 2N3553
Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes
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2N3375
2N3553
2N3632
2N3553
The2N3375
2N3375
2N3632
2n3375 transistor
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SPB-26
Abstract: No abstract text available
Text: • 7fi 2 flcm GGD603D 3Tb ■ RHM K /L ig h t Emitting Diodes SPB-26 SPB-26 Series 1.9 X 4.9mm Rectangular Dual-Color Lamps S erie s ÿt-fÿ-cj-jiS/Dimensions (Unit : mm) SPB-26 v ij - X l i , 2fe£3fc<7) JFi ( 1 .9 X 4 . 9 m m ) ¥ ® £ 3 t7 > 7 T ' t „ 3§
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GGD603D
SPB-26
SPB-26
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Untitled
Abstract: No abstract text available
Text: m • PM15RHB120 S IE J> POlilEREX INC m 7 E * ï4 t S l DD0S7S4 3Tb WÊPRX Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 ln tB lH m o d ^ ^ -3 M o d u l& S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re ß p h a s e + Brake
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PM15RHB120
BP107,
Amperes/460
20kHz)
72T4L
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18AF
Abstract: BUT18AF BUT18F UT18 BUT18
Text: N AMER P H I L I P S / D I S C R E T E bTE T> m 0020441 3Tb I IAPX BUT18F BUT18AF SILICO N D IFFU SED PO W ER T R A N SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control
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bbS3R31
BUT18F
BUT18AF
OT186
18AF
BUT18AF
UT18
BUT18
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video auxiliary data
Abstract: CXD8
Text: •I Ö3ÖS3ÜB QQDSbSM 3Tb « S O N Y SO N Y CXD8129K Preliminary D2 Video Receiver Coprocessor Description T h e C X D 8 1 2 9 K is th e co-processor of th e serial interface transmitter in conformity with th e S erial Digital inter fa ce form at for Com posite Video. It's a C M O S G ate Array IC m ade by Sony. T h e device m akes up a transmitter
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CXD8129K
video auxiliary data
CXD8
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Untitled
Abstract: No abstract text available
Text: Ö U AL IT Y T E C H N O L O G I E S CORP 57E » 74bbñ51 0 0 0 H im 3Tb •■ 3TY Optolsolator Specifications _ H 11A520, H 11A550, H 11A 5100 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H 1 1 A 5 2 0 , H 1 1 A 5 5 0 a n d H 1 1 A 5 1 0 0 co n s is t o f a g a lliu m
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11A520,
11A550,
7Mbbfi51
H11A520,
H11A550,
H11A5100
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