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    3TC2 Search Results

    3TC2 Result Highlights (4)

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    4513TC-245XGLB Coilcraft Inc General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4614, ROHS COMPLIANT Visit Coilcraft Inc
    4513TC-245XGL Coilcraft Inc RFID transponder coil, SMT, RoHS Visit Coilcraft Inc
    4513TC-245X Coilcraft Inc RFID transponder coil, SMT, RoHS Visit Coilcraft Inc
    4513TC-245XGLD Coilcraft Inc General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4614, ROHS COMPLIANT Visit Coilcraft Inc
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    3TC2 Price and Stock

    Microchip Technology Inc MCP73223T-C2SI-MF

    IC BAT CNTL IRON PHOS 1-2C 10DFN
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    DigiKey MCP73223T-C2SI-MF Cut Tape 3,925 1
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    MCP73223T-C2SI-MF Reel 3,300 3,300
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    Bourns Inc 2020-23T-C2LF

    GDT 180V 10KA 3 POLE TH
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    DigiKey 2020-23T-C2LF Tray 2 1
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    Mouser Electronics 2020-23T-C2LF 1,257
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    Master Electronics 2020-23T-C2LF 800
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    JRH Electronics TS-103-T-C-2

    .100" SINGLE ROW SCREW MACHINE T
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    DigiKey TS-103-T-C-2 Bulk 1
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    Samtec Inc TS-103-T-C-2

    .100" SINGLE ROW SCREW MACHINE T
    Free Sample
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    DigiKey TS-103-T-C-2 Bulk 1
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    Samtec Inc HTS-103-T-C-2

    .100" HIGH-TEMP SINGLE ROW SCREW
    Free Sample
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    DigiKey HTS-103-T-C-2 Bulk 1
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    3TC2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rs808

    Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
    Text: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low


    Original     		PDF HUF76112SK8 HUF76112SK8 725pF rs808 HUF76112SK8T AN7254 AN7260 AN9321 AN9322 MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		PDF ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS

    AN9321

    Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
    Text: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUFA75639S3R4851 115opment. AN9321 AN9322 HUFA75639S3R4851 TB334 TC217

    76439S

    Abstract: HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334
    Text: HUFA76439P3, HUFA76439S3S Data Sheet January 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76439P3 HUFA76439S3S • Ultra Low On-Resistance


    Original     		PDF HUFA76439P3, HUFA76439S3S O-220AB O-263AB HUFA76439P3 O-220opment. 76439S HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334

    fairchild to-220ab 75343P

    Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3S fairchild to-220ab 75343P 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321D3ST

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S

    76407DK8

    Abstract: No abstract text available
    Text: HUFA76407DK8T_F085 October 2010 Data Sheet 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V JEDEC MS-012AA BRANDING DASH


    Original     		PDF HUFA76407DK8T MS-012AA 76407DK8

    76645P

    Abstract: 76645S TB334 HUFA76645P3 HUFA76645S3S HUFA76645S3ST
    Text: HUFA76645P3, HUFA76645S3S Data Sheet January 2002 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76645P3 HUFA76645S3S Features • Ultra Low On-Resistance


    Original     		PDF HUFA76645P3, HUFA76645S3S O-220AB O-263AB HUFA76645P3 O-220AB 76645P 76645S TB334 HUFA76645P3 HUFA76645S3S HUFA76645S3ST

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76609D3S October 2013 Data Sheet N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ Packaging Features JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models


    Original     		PDF HUF76609D3S O-252AA HUF76609D3ST 76609D HUF76609D3S

    Untitled

    Abstract: No abstract text available
    Text: HUF75645P3, HUF75645S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V


    Original     		PDF HUF75645P3, HUF75645S3S O-220AB O-263AB HUF75645P3 HUF75645S3ST 75645P

    siemens 3tb44

    Abstract: 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor
    Text: 3RT, 3RH, 3TB, 3TC, 3TH, 3TK Contactors for Special Applications Contactors with Extended Tolerance 0.7 . 1.25 x Us , for Railway Applications 3RT10 motor contactors, 5.5 . 45 kW DC operation • DC solenoid system Screw terminals For screw and snap-on mounting onto standard mounting rail


    Original     		PDF 3RT10 483-0B. 503-0B. 523-0B. 543-0B. 563-0B. 683-0D. 693-0D. 3TK19 siemens 3tb44 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor

    HUF75321D3

    Abstract: 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334
    Text: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321D3, HUF75321D3S 49e-1 61e-2 HUF75321D 10e-3 72e-2 67e-2 30e-1 HUF75321D3 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334

    fairchild to-220ab 75343P

    Abstract: 75343G 75343P 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST TA75343 TB334
    Text: HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75343G3, HUFA75343P3, HUFA75343S3S fairchild to-220ab 75343P 75343G 75343P 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST TA75343 TB334

    75631P

    Abstract: 75631S AN9321 HUFA75631P3 HUFA75631S3ST TB334
    Text: HUFA75631P3, HUFA75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST Features • Ultra Low On-Resistance


    Original     		PDF HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 75631P 75631P 75631S AN9321 HUFA75631P3 HUFA75631S3ST TB334

    75631P

    Abstract: AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
    Text: HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features • Ultra Low On-Resistance


    Original     		PDF HUF75631P3, HUF75631S3ST O-220AB O-263AB HUF75631P3 75631P 75631P AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334

    76609D

    Abstract: AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
    Text: HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3 Features • Ultra Low On-Resistance


    Original     		PDF HUF76609D3, HUF76609D3S O-251AA O-252AA HUF76609D3 76609D 76609D AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334

    76419D

    Abstract: AN9321 HUFA76419D3 HUFA76419D3S HUFA76419D3ST TB334 AN-7254 HUFA76419D
    Text: HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76419D3S HUFA76419D3 Features • Ultra Low On-Resistance


    Original     		PDF HUFA76419D3, HUFA76419D3S O-251AA O-252AA HUFA76419D3 O-251AAopment. 76419D AN9321 HUFA76419D3 HUFA76419D3S HUFA76419D3ST TB334 AN-7254 HUFA76419D

    76437S

    Abstract: HUF76437S3ST AN9321 HUF76437P3 HUF76437S3S TB334
    Text: HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S Features • Ultra Low On-Resistance


    Original     		PDF HUF76437P3, HUF76437S3S O-220AB O-263AB HUF76437P3 76opment. 76437S HUF76437S3ST AN9321 HUF76437P3 HUF76437S3S TB334

    76423P

    Abstract: AN9321 HUF76423P3 HUF76423S3S HUF76423S3ST TB334 76423S
    Text: HUF76423P3, HUF76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76423P3 HUF76423S3S Features • Ultra Low On-Resistance


    Original     		PDF HUF76423P3, HUF76423S3S O-220AB O-263AB HUF76423P3 76423P HUF764opment. 76423P AN9321 HUF76423P3 HUF76423S3S HUF76423S3ST TB334 76423S

    tda 3310

    Abstract: SAA2003 SAA2013 SAA2013H
    Text: P r e lim in a r y s p e c if ic a tio n P h ilip s S e m ic o n d u c to r s Adaptive allocation and scaling for PASC coding in DCC systems_ SAA2013 FEATURES • Wide operating voltage range: 2.7 to 5.5 V • Low power consumption: 13 mW; 3.0 V


    OCR Scan     		PDF SAA2013 OT307) SAA2013 TC256 FS256. CLK24. 711002b tda 3310 SAA2003 SAA2013H