Untitled
Abstract: No abstract text available
Text: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is
|
Original
|
GHz20060
GHz20060
|
PDF
|
MIL-STD-462C
Abstract: connectors m24308 AB1275 DBMME25PF ab35s 4-40 UNC-2B SPECIFICATION AB100 MIL-S-901C
Text: www.martekpower.com Series AB DC/DC Converters NOTE: THE AB SERIES IS NOT RECOMMENDED FOR NEW DESIGNS DUE TO PARTS OBSOLESCENCE. WE RECOMMEND THE RB SERIES AS A 100% COMPATIBLE DIRECT REPLACEMENT. 200 watt 50 watt 20 watt 35 watt 100 watt A comprehensive line of full military DC-DC converters ideally suited for
|
Original
|
-55oC
MIL-STD-810C
MIL-S-901C
MIL-STD-462C
connectors m24308
AB1275
DBMME25PF
ab35s
4-40 UNC-2B SPECIFICATION
AB100
MIL-S-901C
|
PDF
|
TRANSISTOR MOTOROLA MAC 223
Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),
|
Original
|
|
PDF
|
16 pin 4x4 amplifier gsm
Abstract: amplifier QFN16 MCH185A3R3CK
Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%
|
Original
|
ECP100
2300MHz
96GHz
PCS/CDMA2000/IMT2000/UMTS
QFN-16
ECP100
ECP100G
ECP100G-500
ECP100G-1000
ECP100D
16 pin 4x4 amplifier gsm
amplifier QFN16
MCH185A3R3CK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE
|
Original
|
ECP200
2300MHz
96GHz
PCS/CDMA2000/IMT2000/UMTS
QFN-16
ECP200
ECP200G
ECP200G-500
ECP200G-1000
ECP200D
|
PDF
|
ALC5622
Abstract: ALC5622-GRT ALC5622-GR JATR-1076-21 MAX11111 ALC56
Text: ALC5622-GR ALC5622-GRT I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.0 08 April 2008 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047
|
Original
|
ALC5622-GR
ALC5622-GRT
JATR-1076-21
ALC5622
includin8000
QFN-32
ALC5622
ALC5622-GRT
ALC5622-GR
JATR-1076-21
MAX11111
ALC56
|
PDF
|
ALC5621
Abstract: ALC5621-GRT ALC56 REG26 JATR-1076-21 bluetooth headphone
Text: ALC5621 I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.0 27 December 2007 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047
|
Original
|
ALC5621
JATR-1076-21
ALC5621-GR
QFN-32
ALC5621-GRT
ALC5621
ALC5621-GRT
ALC56
REG26
JATR-1076-21
bluetooth headphone
|
PDF
|
ALC5622
Abstract: ALC5622-GR ALC5622-GRT ALC56 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM audio mixer JATR-1076-21 36ah
Text: ALC5622-GR ALC5622-GRT I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.1 13 November 2008 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047
|
Original
|
ALC5622-GR
ALC5622-GRT
JATR-1076-21
ALC5622
QFN-32
ALC5622
ALC5622-GR
ALC5622-GRT
ALC56
5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM
audio mixer
JATR-1076-21
36ah
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
|
Original
|
MRFG35003AN
MRFG35003ANT1
|
PDF
|
CPE 2-129
Abstract: N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
|
Original
|
MRFG35003AN
MRFG35003ANT1
CPE 2-129
N 341 AB
PANASONIC MA 645 911
ZO 607 MA
A113
A114
A115
AN1955
C101
JESD22
|
PDF
|
ATC 1084
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
|
Original
|
MRFG35003AN
MRFG35003ANT1
ATC 1084
A113
A114
A115
AN1955
C101
JESD22
MRFG35003ANT1
transistor c 413
ATC 1084 -33
|
PDF
|
MRFG35003ANT1
Abstract: ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 0, 4/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
|
Original
|
MRFG35003AN
MRFG35003ANT1
MRFG35003ANT1
ATC 1084
ic atc 1084
PANASONIC MA 645 911
A113
A114
A115
AN1955
C101
JESD22
|
PDF
|
MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
|
Original
|
714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: www.martekpower.com Series AM AC-DC / DC-DC Converters 50 watt triple output 50 watt single output 100 watt The AM series AC-DC/DC-DC power supplies can accept a wide range of input powers making them true multiple input power supplies. The AM models are uniquely qualified for a variety of military applications
|
Original
|
MIL-STD-810C
MIL-S-901C
50Vdc
|
PDF
|
|
|
IS95A
Abstract: IS-95A AP501 AP501-PCB JESD22-A114
Text: AP501 The Communications Edge TM PCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1930 – 1990 MHz Functional Diagram The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage
|
Original
|
AP501
AP501
IS-95A
JESD22-A114
JESD22-C101
1-800-WJ1-4401
IS95A
AP501-PCB
JESD22-A114
|
PDF
|
6 FMR 40
Abstract: No abstract text available
Text: AM011037WM-BM-R AM011037WM-FM-R February 2010 Rev 2 DESCRIPTION AMCOM’s AM011037WM-BM-R and AM011037WM-FM-R are part of the GaAs pHEMT MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at +8V. The input and
|
Original
|
AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM-R
AM011037WM-FM-R
38dBm)
AM011037WM-BM/FM-R
6 FMR 40
|
PDF
|
AM011037WM-BM/FM-R
Abstract: amcomusa mmics
Text: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover
|
Original
|
AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM/FM-R
38dBm)
AM011037WM-BM/FM-R
10mils
1000pF,
50ohms,
10ohms,
amcomusa
mmics
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19030LR3 MRF19030LSR3 Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
|
Original
|
MRF19030LR3
MRF19030LSR3
|
PDF
|
MRF19030
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
|
Original
|
MRF19030R3
MRF19030SR3
MRF19030
|
PDF
|
MRF19030
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
|
Original
|
MRF19030
MRF19030S
|
PDF
|
j721
Abstract: j435 MRF19030
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and
|
Original
|
Gain990
MRF19030
MRF19030R3
MRF19030S
MRF19030SR3
j721
j435
|
PDF
|
40watt amplifier
Abstract: SA1106 40-watt IS-136
Text: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1106 TDMA 40-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module • ■ ■ ■ 40 Watts TDMA IS-136 +48 dBm P1dB 45 dB Gain -30°C to +85°C W OUTLINE DRAWING 4 PIN, 4.48
|
Original
|
SA1106
40-Watt
IS-136
40watt amplifier
SA1106
40-watt
IS-136
|
PDF
|
W050
Abstract: No abstract text available
Text: PACIFIC PM2105 MONOLITHICS DATASHEET 1 Watt RFIC Power Amplifier - 800 to 2000 MHz Operation . Features • • • • >1 Watt Output Power @ 5 V 55% Efficiency Multiple Biasing Modes 3 to 6 Volt Operation o nn cm ¡S m □ r PM2105 mu □r Applications •
|
OCR Scan
|
PM2105
PM2105
W050
|
PDF
|
W050
Abstract: No abstract text available
Text: PM2105 PACIFIC MONOUTHICS DATASHEET 1 Watt RFIC Power Amplifier - 800 to 2000 MHz Operation . Features • • • • >1 W att Output Power @ 5 V 55% Efficiency Multiple Biasing Modes 3 to 6 Volt Operation □r o r PS m mu □ r PM2105 m or Applications •
|
OCR Scan
|
PM2105
PM2105
2105FNL
W050
|
PDF
|
