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    4077 CMOS Search Results

    4077 CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    4077 CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    74573

    Abstract: 74574 7486 XOR GATE 7486 full adder latch 74574 7408, 7404, 7486, 7432 7490 Decade Counter 74373 cmos dual s-r latch 2 bit magnitude comparator using 2 xor gates design a BCD counter using j-k flipflop
    Text: Semiconductor Logic Device Cross-Reference Here is a comprehensive cross-reference of TTL and CMOS chips that are readily available over the counter from such places as Maplin Electronics in the UK . Tables of both TTL and CMOS devices are provided along with tables grouping chips with the same functionality together.


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    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns


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    IDT70V7288S/L 16-bit PDF

    A12L

    Abstract: A13L IDT70V7288 4077 cmos
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit x1670V7288S/L 100-pin PN100-1) 70V7288 A12L A13L IDT70V7288 4077 cmos PDF

    ci 4077

    Abstract: 4077 cmos truth table for 7 inputs OR gate A13L IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns


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    16-bit IDT70V7288S/L ci 4077 4077 cmos truth table for 7 inputs OR gate A13L IDT70V7288 PDF

    A13L

    Abstract: IDT70V7288 4077 cmos
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns


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    IDT70V7288S/L 16-bit 200mV A13L IDT70V7288 4077 cmos PDF

    4077 cmos

    Abstract: A13L IDT70V7288 ci 4077
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns


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    IDT70V7288S/L 16-bit 200mV 4077 cmos A13L IDT70V7288 ci 4077 PDF

    ci 4077

    Abstract: A12L A13L IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288 ci 4077 A12L A13L IDT70V7288 PDF

    A13L

    Abstract: IDT70V7288 ci 4077
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip


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    IDT70V7288S/L 16-bit A13L IDT70V7288 ci 4077 PDF

    A12L

    Abstract: A13L IDT70V7288
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns


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    IDT70V7288S/L 16-bit 200mV A12L A13L IDT70V7288 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns


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    IDT70V7288S/L 16-bit 200mV PDF

    lcx 574

    Abstract: STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049
    Text: Standard Logic ICs Selection guide August 2007 www.st.com/logic Family selector HCT 0 to VCC 4 12 4.5 to 5.5 0 to VCC 4 12 AC 2 to 6 0 to VCC 24 4 ACT 4.5 to 5.5 0 to VCC 24 4 VHC 2 to 5.5 0 to 5.5 8 4 VHCT 4.5 to 5.5 0 to 5.5 8 4 V1G 2 to 5.5 0 to 5.5 8 4


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    DIP-14/16 DIP-14 DIP-24 SGSTDLOG0307 lcx 574 STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049 PDF

    4001 4011 cmos

    Abstract: 4049 DIP14 4013 datasheet hct lcx 574 CMOS 4541 str 4512 C3245 4017 14 pin package CMOS4000 hcf 4541 be
    Text: Surface mounting packages Standard Logic ICs SO-8 SO-14 SO-16L SO-16 SO-20 SO-24 Selection guide TSSOP14 SOT23-8L TSSOP20 TSSOP16 SOT23-5L SOT323-5L Flip-Chip4 TSSOP48 TSSOP24 µFBGA42 Package TFBGA54 TFBGA96 H inch W (tape width mm) P (mm) D (mm) SO-8, TFBGA42


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    SO-14 SO-16L SO-16 SO-20 SO-24 TSSOP14 OT23-8L TSSOP20 TSSOP16 OT23-5L 4001 4011 cmos 4049 DIP14 4013 datasheet hct lcx 574 CMOS 4541 str 4512 C3245 4017 14 pin package CMOS4000 hcf 4541 be PDF

    E1 PCM encoder

    Abstract: E1 PCM CODEC 2b1q encoding bt8953 RELAY 4088 Bt8953B Cordless Phone circuit diagram E1 frame
    Text: network access products Bt8110B ADPCM Encoder/Decoder High-Capacity ADPCM Processor The Bt8110B multichannel ADPCM processor delivers Adaptive Differential Pulse-Code Modulation ADPCM encoding and decoding in a highly integrated CMOS package. The fixed-rate or


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    Bt8110B Bt8110B provid2734 E1 PCM encoder E1 PCM CODEC 2b1q encoding bt8953 RELAY 4088 Bt8953B Cordless Phone circuit diagram E1 frame PDF

    KLI-2113 sensor board

    Abstract: KEK-4H0349-KLI-4104-12-30 kodak kli 2113 KLI-2113 Photodiode Array 32 element Kodak KLI-8023 CCD KODAK KLI-2113 KLI14 KLI-14403 KLI-5001
    Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KLI-4104 Image Sensor High-Resolution Quadri-Linear Array 3 X 4080 Chroma, 10um Square Pixels and Array 1 X 8160 Luma, 5um Square Pixels June 7, 2004 Revision 5.0 1 KAF-4104 Revision 5.0 www.kodak.com/go/imagers


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    KLI-4104 KAF-4104 KLI-4104 4104-DAA-CBAA 4104-DAA-CBAE 4104-DAA-CPAA 4104-DAA-CPAE com/US/en/dpq/site/SENSORS/name/KLI-4104 product/show/KLI-4104 KLI-2113 sensor board KEK-4H0349-KLI-4104-12-30 kodak kli 2113 KLI-2113 Photodiode Array 32 element Kodak KLI-8023 CCD KODAK KLI-2113 KLI14 KLI-14403 KLI-5001 PDF

    IDT7M4077

    Abstract: No abstract text available
    Text: 256K x 32 BiCMOS/CMOS STATIC RAM MODULE PRELIMINARY IDT7M4077 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a multilayer ceramic substrate using eight 256Kx4


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    IDT7M4077 256Kx4 200mV IDT7M4077 PDF

    IDT7M4077

    Abstract: kw05 2814t
    Text: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a mu Itilay er ceramic substrate using eight 256Kx4


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    IDT7M4077 I/O10 I/O11 I/012 IDT7M4077 kw05 2814t PDF

    IN 4077

    Abstract: IC 4077 910UB
    Text: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit IDT70V7288 IDT70V7288S/L 100-pin PN100-1) 70V7288 IN 4077 IC 4077 910UB PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture processor communications; interrupt option Interrupt flags with programmable masking


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    IDT70V7288S/L 100-pin 16-bit O-136, PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit 100-pin PN100-1) 70V7288 PDF

    Untitled

    Abstract: No abstract text available
    Text: In te g ra te d D e v ile T e c h n o lo g y , l i e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks


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    IDT70V7288S/L 16-bit MO-136, 492-M PSC-4036 PDF

    Untitled

    Abstract: No abstract text available
    Text: C O S /M O S IN T EG R A T ED CIRCUITS p> ÀZ Ì L O T T 'S „ Eh cf S b HCC/HCF 4077B 4070B - QUAD EXCLUSIVE-O R GATE 4077B - QUAD EXCLUSIVE-NO R GATE • • • • • • MEDIUM-SPEED OPERATION tpHL= tp LH= 70 ns TYP. AT V cc = 10V, CL= 50 pF QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE


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    4077B 4070B 4077B 4070B/4077B 4070B PDF

    Bd 4070 transistor

    Abstract: 4077B 4070B 40xx cmos cmos 40xx 4077BM
    Text: C O S /M O S IW TFR R ATFn C IRC U ITS A r ^ >' 7 - \ ^ * 7 ' 7 p> 8 „ HCC/HCF 4070B • m r n r m . 4070B - Q U A D E X C L U S IV E -O R G A TE 4077B - Q U A D E X C L U S IV E -N O R G A TE • • • • • • M ED IU M -S PEE D O PE R ATIO N tp HL= t P L H = 70 ns (TYP. A T V c c = 10V, CL = 50 pF


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    4070b 4070B 4077B 4070B/4077B 14-lead 4077B Bd 4070 transistor 40xx cmos cmos 40xx 4077BM PDF

    cmos 4000 series

    Abstract: mhb 4011 cmos 4016 transistor 2248 CMOS 4024 with truth table working of IC 4017 MH 7400 4017-DECADE COUNTER mhb 4013 MHB 4012
    Text: - ¿V 'V â - -—• c^ö ö 0 0 5388 FERRANTI INTERDESIGN, INC. . " . H I ^^M ffS E R IE S HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15M Hz at 5V.


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    40MHz 15MHz cmos 4000 series mhb 4011 cmos 4016 transistor 2248 CMOS 4024 with truth table working of IC 4017 MH 7400 4017-DECADE COUNTER mhb 4013 MHB 4012 PDF

    ferranti array

    Abstract: No abstract text available
    Text: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input


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    40MHz 15MHz ferranti array PDF