itt 4116
Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
Text: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)
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ITT4116
16384-Bit
ITT4116
6251-121-5E
itt 4116
itt capacitors
4116 memory
4116 ITT
IC 4027 pin diagram
4116
4027 itt
ITT SEMICONDUCTORS
ITT4
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SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
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2114L
6116P3
6116LP3
AY-3-1270
AY-3-1350
AY-3-8910
AY-3-8912
AY-5-1230
CA3080E
CA3130E
SN76477
TNY 176 PN EQUIVALENT
2n4401 free transistor equivalent book
tis43
XR2206 application notes
Semiconductor Data Handbook mj802
2N3866 s2p
bc149c
TIP35C TIP36C sub amplifier circuit diagram
LM131
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P55i
Abstract: No abstract text available
Text: Electronics 8 ~ B i t C M O S M i c r o c o n t r o 11 e r Product Specification OVERVIEW The K S 88C 4116 single-chip 8-bit m icrocontroller is fabricated using a highly advanced C M O S process. Its fast and reliable CPU is based on Zilog's S u pe r8 architecture. W ith six 8-bit I/O ports, a fu ll-duplex serial port, two
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16-bit
KS88C4116
P55i
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SMS 20 1000A
Abstract: PU3116 PU3216 PU4116 PU4216 PU4416 PU4516
Text: P o w er T ra n s is to r A rra y s P U 3 1 1 6 , P U 4 1 1 6 , PU441Ó P U 3116 , P U 4116 , P U 4 4 1 6 P a c k a g e D im e n s io n s PU3116 Silicon NPN Epitaxial Planar Type 20.5max. sT s P o w e r Amplifier, S w itching C o m p l e m e n ta r y P a ir with P U 3 2 1 6 , P U 4 2 1 6 , P U 4 5 1 6
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PU3116,
PU411Ã
PU441Ã
PU4116,
PU4416
PU3216,
PU4216,
PU4516
PU3116:
SMS 20 1000A
PU3116
PU3216
PU4116
PU4216
PU4416
PU4516
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4116 ram ic
Abstract: 4116 ram RAM 4116 4116 dynamic ram 4116 memory M5K4116P 4116 ic ram M5K4116P-3 4116 M5K4116
Text: MITSUBISHI LSIs M5K 4116 P-2, S-2; P-3, S-3; P-4, S-4 1 6 3 8 4 -B IT 1 6 3 8 4 -W O R D BY 1-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW ) T h is is a fa m ily o f 16 3 8 4 - w o r d by 1 -b it d y n a m ic R A M s , fa b ric a te d w ith th e N -ch an n e l silicon-gate M O S process, and
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384-BIT
384-WORD
16-pin
50ns/DIVISION
4116 ram ic
4116 ram
RAM 4116
4116 dynamic ram
4116 memory
M5K4116P
4116 ic ram
M5K4116P-3
4116
M5K4116
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vfd 5x7
Abstract: JIS-C-6220 T90MS EIS BMW 4116 ram ic 6 digit VFD BCM sdk M66004SP VFd 5X7 DOT M66004
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66004SP/FP
16-DIGIÃ
vfd 5x7
JIS-C-6220
T90MS
EIS BMW
4116 ram ic
6 digit VFD
BCM sdk
M66004SP
VFd 5X7 DOT
M66004
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information applikation
Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond
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JIS-C-6220
Abstract: 4116 ram DIG03
Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segment vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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M66004SP/FP
16-DIGIT
M66004
JIS-C-6220.
JIS-C-6220)
JIS-C-6220
4116 ram
DIG03
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LM 4138
Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Text: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,
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TLCS-870/X
000FC
00102H
00FCH
11110000B
11011000B
11111111B
00001111B
10100110B
LM 4138
HL 482
RAM 4163
cd 4162
GFIJ
c 4161
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Untitled
Abstract: No abstract text available
Text: 0 3.9 O t°10 P.C.B. LAYOUT 7.62 2.54 't io csi -e — & -6 - 5 x 0 0.80 T oo 1.27 CODE DRR4116 1 2 4 8 Tolerances: • • CIRCUIT CHARACTERISTIC POSITION « on I 1 2 3 4 5 6 7 8 9 A B c D E F • • • • • • • • • • • • • • • • • •
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DRR4116
UL94V-0,
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1F0620
Abstract: ADF4116
Text: ANALOG DEVICES PLLFrequencySynthesizer Preliminary Technical Data ÆDF4116/ÆDF4117/ÆDF4118 FEATURES A D F4116: 550 M H z A D F4117: 1.2 GHz A D F4118: 3.0 GHz +2.7 V to +5.5 V Pow er Supply 3-W ire Serial Interface Digital Lock Detect Pow er Down M ode GENERAL
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F4116:
F4117:
F4118:
DF4116/
DF4117/
DF4118
F4117
F4118
1F0620
ADF4116
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ms-6535
Abstract: AA51 4116 lf 4116 16k ram 18-PIN BOX225012 TMS4132JDL 3as1 tms 375 CA31
Text: MOS LSI 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY i- 32,768 X — i- NOVEMBER 1978 1 Organization • 10% Tolerance on All Supplies All Inputs including Clocks TTL-Compatible 18-PIN SIDEBRAZE DUAL-IN-LINE PACKAGE TOP VIEW • Unlatched Three-State Fully TTL-Compatible
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768-BIT
18-Pin
300-Mil
TMS4132JDL
ms-6535
AA51
4116 lf
4116 16k ram
BOX225012
TMS4132JDL
3as1
tms 375
CA31
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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M66004SP/FP
16-DIGIT
M66004
DIG11
4V4170J,
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11308
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, m PA RT NUM BER REV. SSB-CEL1 0555UWW c E.C.N. NUM BER AND REVISIO N COMMENTS DATE E.C.N. # 1 1 2 7 7 . 1 0 .6 .0 5 E.C.N. # 1 1 3 0 2 . 1.24.06 E.C.N. #11305. 2.2.06 ELECTRO-OPTICAL CHARACTERISTICS TA= 25T PER MODULE lf = BO mA
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0555UWW
550nm
180ohms
DECL05URE
11308
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2N2386
Abstract: 2N2386A
Text: TYPES 2N2386, 2N2386A P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . DL-S 6 8 1 0 9 1 6 , S E P T E M B E R 196 8 AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N2386A offers the following improvements resulting from process innovation:
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2N2386,
2N2386A
2N2386
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to48c
Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
Text: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 ‘ 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA
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0T17bG2
2N2432
2N2432A
2N4138
2N2432/4138
flT17i
a00b5
to48c
IC LA 4138
TO-48C
LA 4138
2N2432A TELEDYNE
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diode zener c25
Abstract: IGBT FF 300
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in
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OT223)
MMG05N60D
318E-04
0E-05
0E-04
4-T19
diode zener c25
IGBT FF 300
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TMS4116
Abstract: TMS4132
Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible
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768-BIT
18-PIN
200ACCESS
4132JD
TMS4116
TMS4132
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PDF
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz
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AT-41435
AT-41435
Rn/50
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F190
Abstract: F191 F-190
Text: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter W ith Preset and Ripple Clock m Oo[T 77| c p c l [7 1 3| RC / d |T Ï 2 l TC Q2 T T T | PL 03 [ 7 7 3 ] P2 Description The ’F190 is a reversible BCD (8421 decade co u n te r featuring synchronous cou ntin g and asynchronous presetting. The preset feature
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54F/74F
F190
F191
F-190
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M66004SP
Abstract: 16 Digit 5x7 Segment VFD 4116 ram ic JIS-C-6220 ely transformers 6 digit VFD M66004 vfd 5x7
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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90isto
M66004SP/FP
16-DIGIT
-SEG35
DIG15
M66004SP
16 Digit 5x7 Segment VFD
4116 ram ic
JIS-C-6220
ely transformers
6 digit VFD
M66004
vfd 5x7
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PDF
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vfd 5x7
Abstract: DIGITAL VFD CLOCK IC vfd 14 segment 34 pin 4 digit 7 segment display 14 pin 2 digit 7 segment display
Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M 66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech nology. It contains 160 ROM characters and 16 user-defined RAM
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M66004SP/FP
16-DIGIT
JIS-C-6220.
JIS-C-6220)
vfd 5x7
DIGITAL VFD CLOCK IC
vfd 14 segment 34 pin
4 digit 7 segment display 14 pin
2 digit 7 segment display
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4116 2n
Abstract: BFG 99
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC
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2N5484
2N9486
4116 2n
BFG 99
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PDF
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Untitled
Abstract: No abstract text available
Text: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter With Preset and Ripple Clock Description The ’F190 is a reversible BCD 8421 decade co u n te r fea tu ring synchronous c o u n tin g and asynchronous presetting. The preset feature allow s the ’F190 to be used in program m able dividers. The C ount Enable
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54F/74F190
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PDF
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