Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    416 J50 Search Results

    SF Impression Pixel

    416 J50 Price and Stock

    KEMET Corporation SMR5474J50J04L16.5CBULK

    Film Capacitors 0.47uF 50V 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMR5474J50J04L16.5CBULK 1,689
    • 1 $3.11
    • 10 $2.22
    • 100 $1.81
    • 1000 $1.8
    • 10000 $1.8
    		Buy Now

    KEMET Corporation SMR15475J50B14L16.5CBULK

    Film Capacitors 4.7uF 50V 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMR15475J50B14L16.5CBULK
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $9.21
    		Get Quote

    416 J50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEA4263

    Abstract: Troubleshooting varistor 4263B 2110-0202
    Text: Agilent 4263B LCR Meter Service Manual SERIAL NUMBERS This manual applies directly to instruments with serial number pre x JP1KD. For additional important information about serial numbers, read \Instruments Covered by This Manual" in Chapter 1 of this manual.


    Original     		PDF 4263B TEA4263 Troubleshooting varistor 2110-0202

    Untitled

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 FCSI0598M200

    FLC317MG-4

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4 FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4

    FLC317MG-4

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		PDF FLC317MG-4 FLC317MG-4

    FLM7785-18F

    Abstract: No abstract text available
    Text: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7785-18F -45dBc FLM7785-18F FCSI0500M200

    417-116

    Abstract: FLM5964-6F
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 417-116

    Untitled

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM5359-25F -46dBc FLM5359-25F FCSI0499M200

    FLM5359-25F

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5359-25F -46dBc FLM5359-25F FCSI0499M200

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F FCSI0598M200

    417-116

    Abstract: FLM5964-6F 26dBm
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F 417-116 26dBm

    Untitled

    Abstract: No abstract text available
    Text: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM5972-8F -45dBc FLM5972-8F FCSI0599M200

    FLM5359-25F

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5359-25F -46dBc FLM5359-25F Powe4888

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7785-18F -45dBc FLM7785-18F

    FLM5964-6F

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F

    FLM5972-8F

    Abstract: No abstract text available
    Text: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5972-8F -45dBc FLM5972-8F FCSI0599M200

    FLM7785-18F

    Abstract: No abstract text available
    Text: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7785-18F -45dBc FLM7785-18F

    Tamagawa TS-2014N181E32

    Abstract: tamagawa power flex 700 vfd motor wiring diagram Allen-Bradley VFD Powerflex 700S TS-2014N182E32 20-HIM-C3 tamagawa ts ts2087n1e9 TS-2014N181E32 1321-3R130-B
    Text: Technical Data Phase I Control PowerFlex 700S High Performance AC Drive 2 PowerFlex 700S AC Drives Technical Data — Phase I Control The Allen-Bradley PowerFlex® 700S AC drive, a version of PowerFlex 700 power platform, offers high performance drive control, advanced features and more


    Original     		PDF 20D-TD001G-EN-P 20D-TD001F-EN-P Tamagawa TS-2014N181E32 tamagawa power flex 700 vfd motor wiring diagram Allen-Bradley VFD Powerflex 700S TS-2014N182E32 20-HIM-C3 tamagawa ts ts2087n1e9 TS-2014N181E32 1321-3R130-B

    Untitled

    Abstract: No abstract text available
    Text: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5972-8F -45dBc FLM5972-8F

    17800

    Abstract: No abstract text available
    Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FMM5805GJ-1 FMM5805GJ-1 FCSI0301M200 17800

    FMM5805

    Abstract: No abstract text available
    Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FMM5805GJ-1 FMM5805GJ-1 FCSI0500M200 FMM5805

    FLM5972-8F

    Abstract: No abstract text available
    Text: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5972-8F -45dBc FLM5972-8F

    17800

    Abstract: FMM5805GJ-1
    Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FMM5805GJ-1 FMM5805GJ-1 17800

    2SC3606

    Abstract: c3c3 transistor
    Text: TOSHIBA 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + 0 .5 2 . 5 - 0 .3 • Low Noise Figure, High Gain. . NF = l.ld B , |S 2lel 2—lld B f=lG H z M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3606 SC-59 -j250 /-jl50 2SC3606 c3c3 transistor