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    41C1R HALL EFFECT Search Results

    41C1R HALL EFFECT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    41C1R HALL EFFECT Datasheets Context Search

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    TLE4941-1C

    Abstract: 4101R TLE4941 41C1R hall effect 41C1R Infineon DEVICES marking format TLE4941-1 Hall sensor see
    Text: D a ta S h e e t S u p pl e m e nt , V 2 . 1 , F e b ru a r y 20 0 5 Differential Two-Wire Hall Effect S e n s o r - I C f o r W h e el S p e e d A p p l i c a t i o n s TLE4941-1 TLE4941-1C Sensors N e v e r s t o p t h i n k i n g . Edition 2004-03-19 Published by Infineon Technologies AG,


    Original     		PDF TLE4941-1 TLE4941-1C TLE4941-1C 4101R TLE4941 41C1R hall effect 41C1R Infineon DEVICES marking format Hall sensor see