4221 MOSFET Search Results

4221 MOSFET Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

4221 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10a h-bridge driver Abstract: No abstract text available Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 75 VOLT 8 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER 4221 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: Low Cost Complete H-Bridge 8 Amp Capability, 75 Volt Maximum Rating Self-contained Smart Lowside/Highside Drive Circuitry	Original	MSK4221 10a h-bridge driver	PDF
PWM Four quadrant control Abstract: 4221 mosfet 200 Amp bridge mosfet 300 Volt mosfet schematic circuit 4221 transistor datasheet MSK4221 10a h-bridge driver Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 75 VOLT 8 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER 4221 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Low Cost Complete H-Bridge 8 Amp Capability, 75 Volt Maximum Rating Self-contained Smart Lowside/Highside Drive Circuitry	Original	MSK4221 PWM Four quadrant control 4221 mosfet 200 Amp bridge mosfet 300 Volt mosfet schematic circuit 4221 transistor datasheet MSK4221 10a h-bridge driver	PDF
marking BM Abstract: "MARKING BM" 2SJ285 EN4221 Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5	Original	EN4221 2SJ285 2SJ285] marking BM "MARKING BM" 2SJ285 EN4221	PDF
2SJ285 Abstract: marking BM Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5	Original	EN4221 2SJ285 2SJ285] 2SJ285 marking BM	PDF
Untitled Abstract: No abstract text available Text: LTC4221 Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 4221 is a 2-channel Hot SwapTM controller that allows a board to be safely inserted and removed from a	Original	LTC4221 LTC4230 LTC4251 S0T-23 LTC4252 LTC4253 4221fa	PDF
4221 transistor Abstract: RX2 0841 G07 15S rx1 1240 hot 95a RX2 0817 WSL25126L000F WSL25126L000 IRF7413 LTC4221 Text: LTC4221 Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4221 is a 2-channel Hot SwapTM controller that allows a board to be safely inserted and removed from a	Original	LTC4221 LTC4230 LTC4251 S0T-23 LTC4252 LTC4253 4221fa 4221 transistor RX2 0841 G07 15S rx1 1240 hot 95a RX2 0817 WSL25126L000F WSL25126L000 IRF7413 LTC4221	PDF
rx1 1240 Abstract: resistor 56k 0617 lt 8220 4221 transistor datasheet 8205 A mosfet transistor g25 mosfet 4221 transistor LT 8195 Text: LTC4221 Dual Hot Swap Controller/ Power Sequencer with Dual Speed, Dual Level Fault Protection U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4221 is a 2-channel Hot SwapTM controller that allows a board to be safely inserted and removed from a	Original	LTC4221 LTC4230 LTC4251 S0T-23 LTC4252 LTC4253 4221f rx1 1240 resistor 56k 0617 lt 8220 4221 transistor datasheet 8205 A mosfet transistor g25 mosfet 4221 transistor LT 8195	PDF
Untitled Abstract: No abstract text available Text: SSE90N10-14 90A , 100V , RDS ON 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)	Original	SSE90N10-14 O-220P O-220P 12-Dec-2011	PDF
Untitled Abstract: No abstract text available Text: Analog Power AM90N10-14P N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits	Original	AM90N10-14P AM90N10-14P	PDF
Untitled Abstract: No abstract text available Text: Analog Power AM7410N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 15 @ VGS = 10V 19 @ VGS = 5.5V DFN5X6-8L Typical Applications: • White LED boost converters	Original	AM7410N AM7410N	PDF
irf710 datasheet Abstract: IRF710 and its equivalent IRF710 TB334 Text: IRF710 Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of	Original	IRF710 O-220AB irf710 datasheet IRF710 and its equivalent IRF710 TB334	PDF
TC4469 Abstract: TC4404 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405 TC4405COA TC4405CPA Text: 1 TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so	Original	TC4404 TC4405 TC4404 TC4405 TC4469 TC4469 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405COA TC4405CPA	PDF
ZRA124 Abstract: ZRA124A01 ZRA124F01 ZRA124N801 ZRA124R01 ZRA124Y01 capacitor 1c5 Text: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZRA124 ISSUE 3 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZRA124 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.24 volts. The device is available in small outline surface mount	Original	ZRA124 ZRA124 ZRA124A01 ZRA124F01 ZRA124N801 ZRA124R01 ZRA124Y01 capacitor 1c5	PDF
h bridg mosfet out Abstract: No abstract text available Text: ISO 9001 CERTIFIED BY DESC 80 VOLT 10 AMP MOSFET H-BRIDGE PWM MOTOR 8170 T h o m p so n Road 4221 DRIVER/AMPLIFIER M.S. KENNEDY CORP. C ic e ro , N.Y. 13039 31 5 699-9201 FEATURES: Low 10 C o st Am p C o m p le te S e lf-c o n ta in e d Four 80 S m a rt	OCR Scan	MSK4221 h bridg mosfet out	PDF

RF1S70N03SM9A Abstract: No abstract text available Text: RFP70N03, RF1S70N03SM in t e r r ii D ata S h eet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power M O SFETs are manufactured using the M egaFE T process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	OCR Scan	RFP70N03, RF1S70N03SM TA49025. 010C2 AN7254 AN7260. RF1S70N03SM9A	PDF
IRF254 Abstract: No abstract text available Text: ^ n a s? ! 2 J H A R R oDsaiafl I • has I R F S 2 5 / R F 2 , I R F 4 5 6 , 2 5 5 / R F 2 5 7 N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -2 0 4 A E • 22A and 20A, 275V - 250V BOTTOM VIEW • rDS on = 0-14H and 0 .1 7 ii	OCR Scan	0-14H IRF254, IRF255, IRF256, IRF257 RF255, Figure16. IRF254	PDF
TA17444 Abstract: No abstract text available Text: IRF710 Semiconductor Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	OCR Scan	IRF710 O-220AB TA17444	PDF
IRF254 Abstract: No abstract text available Text: SI H ARRIS IRF254, IRF255 IRF256, IRF257 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 22A and 20A , 2 75 V - 250V BOTTOM VIEW • r o s o n = 0 . 1 4 i l a n d 0 . 1 7 0 SOURCE • S in g le P u ls e A v a la n c h e E n e rg y R a te d	OCR Scan	Figure16. IRF254	PDF
Untitled Abstract: No abstract text available Text: Semiconductor, Inc. TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so	OCR Scan	TC4404 TC4405 TC4404 TC4405 V-18V)	PDF
4221 motorola transistor Abstract: transistor ba rn S2P02 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors ir M iniM OS™ devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface	OCR Scan	MMSF2P02E 4221 motorola transistor transistor ba rn S2P02	PDF
4221 mosfet Abstract: No abstract text available Text: ~ Semiconductor, Inc. TC4404 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the	OCR Scan	TC4404 TC4405 TC4404 TC4405 V-18V) TC4469 4221 mosfet	PDF
4311 mosfet transistor Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760	OCR Scan	2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r	PDF
Untitled Abstract: No abstract text available Text: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N\| = 0.10 @ VGS = 10V. power field effect transistors are produced using	OCR Scan	NDS9958	PDF
4-221 Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET	PDF

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4221 MOSFET Search Results

4221 MOSFET Result Highlights (5)

4221 MOSFET Datasheets Context Search

10a h-bridge driver

PWM Four quadrant control

marking BM

2SJ285

Untitled

4221 transistor

rx1 1240

Untitled

Untitled

Untitled

irf710 datasheet

TC4469

ZRA124

h bridg mosfet out

RF1S70N03SM9A

IRF254

TA17444

IRF254

Untitled

4221 motorola transistor

4221 mosfet

4311 mosfet transistor

Untitled

4-221