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Catalog Datasheet	MFG & Type	Document Tags	PDF
2SJ195 Abstract: EN3768 37684 Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5	Original	EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195 EN3768 37684	PDF
2SK1923 Abstract: No abstract text available Text: Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode trr=120ns . unit:mm 2052C [2SK1923] 10.2 3.6 4.5 5.1 18.0 15.1	Original	EN4312 2SK1923 120ns) 2052C 2SK1923] O-220AB 2SK1923	PDF
2SJ195 Abstract: No abstract text available Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5	Original	EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195	PDF
2SJ195 Abstract: No abstract text available Text: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage	OCR Scan	2SJ195 2083a 42693TH 2SJ195	PDF
C085 Abstract: No abstract text available Text: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).	OCR Scan	2SK1923 2052B 120ns) VQQ-200V TCl-220AB 42693TH AX-9260 C085	PDF
2052B Abstract: 2SK1923 24n700 Text: Ordering num ber: E N 4 3 1 2 * 2SK1923 No.4312 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 120ns . b so lu te M aximum R atings a tT a = 25°C	OCR Scan	2SK1923 120ns) 2052B 2SK1923 24n700	PDF
Untitled Abstract: No abstract text available Text: 2SJ195 2083A 2092A LD L o w D rive Series VDs s = 1 0 0 V P Channel Power MOSFET 3768 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta=25°C Drain to Source Voltage V d ss Gate to Source Voltage	OCR Scan	2SJ195 42693TH	PDF
2092A Abstract: 2SJ195 Text: Ordering number: EN3768A _ 2SJ195 N0.3768A P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage	OCR Scan	EN3768A 2SJ195 -100V 2092A	PDF