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    CEM9410A

    Abstract: B250P ID73
    Text: M a rc h 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 .3 A , RDS ON =28mQ @ V g s =1 0V. Rds(on)=42itiQ @V gs=4.5V. D D D • Super high dense cell design for extremely low R ds (on ). • High power and current handing capability.


    OCR Scan     		PDF 28ITIQ CEM9410A yf-90% CEM9410A B250P ID73