Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
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MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
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300b tube
Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
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FBGA-11
24-SOJ-300
-SOJ-300
-TSOP2-300AF
-SOJ-300B
28-SOJ-300
28-SOJ-300A
28-SOJ-400
300b tube
90-FBGA-11
165-FBGA-1517
48-TSOP1-1220F
44-TSOP2-400BF-Lead-Free
SAMSUNG MCP
dram
0X13
SAMSUNG MCP 153
tray bga 64
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Z04B
Abstract: MARK Z04D
Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as
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FEDR27T1641L-02-H1
MR27T1641L
MR27T1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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Untitled
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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SOP40 eprom
Abstract: SOP40 prom MR27V402E MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
Text: OKI Semiconductor MR27V402E FEDR27V402E-01-03 Issue Date: Jan. 15, 2004 262,144–Word x 16–Bit or 524,288–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit One Time Programmable Read-Only Memory that can be electrically switched
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MR27V402E
FEDR27V402E-01-03
MR27V402E
144-word
16-bit
288-word
16-bit/524
SOP40 eprom
SOP40 prom
MR27V402EMP
MR27V402ERP
MR27V402ETP
SOJ42-P-400-1
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Z04B
Abstract: MARK Z04D
Text: OKI Semiconductor MR27V1641L FEDR27V1641L-02-H1 Issue Date: April 21, 2006 16M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as 16,777,216 word × 1-bit. The MR27V1641L supports a simple read operation using a single 3.0V or 3.6V power
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MR27V1641L
FEDR27V1641L-02-H1
MR27V1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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MR27V402E
Abstract: MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
Text: OKI Semiconductor MR27V402E FEDR27V402E-02-03 Issue Date: Jan.20, 2003 262,144–Word x 16–Bit or 524,288–Word × 8–Bit Production Programmed Read Only Memory P2ROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit Production Programmed Read-Only Memory (P2ROM ) that can be electrically
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MR27V402E
FEDR27V402E-02-03
MR27V402E
144-word
16-bit
288-word
16-bit/524
MR27V402EMP
MR27V402ERP
MR27V402ETP
SOJ42-P-400-1
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Z04B
Abstract: MARK Z04D Z04D so-8 mark a18 MR27V3241L 40DIP 48TSOP2 CODE z04a
Text: OKI Semiconductor MR27V3241L FEDR27V3241L-02-H2 Issue Date: April 4, 2005 32M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V3241L is a 32 Mbit Production Programmed Read-Only Memory, which is configured as 33,554,432 word × 1-bit. The MR27V3241L supports a simple read operation using a single 3.3V power supply
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MR27V3241L
FEDR27V3241L-02-H2
MR27V3241L
50MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
Z04D
so-8 mark a18
40DIP
48TSOP2
CODE z04a
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MR27V402E
Abstract: SOP40 prom SOJ42-P-400-1.27 PACKAGE OUTLINE MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MR27V402E
FEDR27V402E-01-03
MR27V402E
144-word
16-bit
288-word
16-bit/524
SOP40 prom
SOJ42-P-400-1.27 PACKAGE OUTLINE
MR27V402EMP
MR27V402ERP
MR27V402ETP
SOJ42-P-400-1
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SOJ42-P-400-1.27 PACKAGE OUTLINE
Abstract: MR27V402E MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27V402E
Abstract: MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
Text: Discontinued Product OKI Semiconductor MR27V402E FEDR27V402E-02-03 Issue Date: Jan.20, 2003 262,144–Word x 16–Bit or 524,288–Word × 8–Bit Production Programmed Read Only Memory P2ROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit Production Programmed Read-Only Memory (P2ROM ) that can be electrically
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MR27V402E
FEDR27V402E-02-03
MR27V402E
144-word
16-bit
288-word
16-bit/524
MR27V402EMP
MR27V402ERP
MR27V402ETP
SOJ42-P-400-1
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MR27V402E
Abstract: MR27V402EMP MR27V402ERP MR27V402ETP SOJ42-P-400-1
Text: Discontinued Product OKI Semiconductor MR27V402E FEDR27V402E-01-03 Issue Date: Jan. 15, 2004 262,144–Word x 16–Bit or 524,288–Word × 8–Bit One Time PROM GENERAL DESCRIPTION The MR27V402E is a 4 Mbit One Time Programmable Read-Only Memory that can be electrically switched
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Original
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MR27V402E
FEDR27V402E-01-03
MR27V402E
144-word
16-bit
288-word
16-bit/524
MR27V402EMP
MR27V402ERP
MR27V402ETP
SOJ42-P-400-1
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msm5232
Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
Text: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites
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99J595RB
msm5232
d2b bus
MSM5230
MSM6920
MSM7731-02
2016 RAM
MSM66P589
MSM6411
18QFJ
3ch-10bit
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DIP40 weight
Abstract: MR27V402E SOJ42 MR27V402ETP SOJ42-P-400-1 MR27V402EMP MR27V402ERP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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GM71C17403CJ6
Abstract: GM71C18163CJ6 GM71C17403CJ-6 GM71V18163CT6 1M x 16 EDO RAM SOJ24 GM71C18163CJ-6 GM71C16403CJ-60 GM71C17403CJ GM71V16163CT-6
Text: CMOS DYNAMIC RAM CMOS DRAM’S • • • • • • • The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Part Number GM71C16403CJ-60 EDO GM71C16403CT-60 EDO GM71C17403CJ-60 EDO GM71C17403CT-60 EDO
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GM71C16403CJ-60
GM71C16403CT-60
GM71C17403CJ-60
GM71C17403CT-60
GM71V16403CJ-60
GM71V16403CT-60
GM71V17403CJ-60
GM71V17403CT-60
GM71C16163CJ-60
GM71C16163CT-60
GM71C17403CJ6
GM71C18163CJ6
GM71C17403CJ-6
GM71V18163CT6
1M x 16 EDO RAM
SOJ24
GM71C18163CJ-6
GM71C17403CJ
GM71V16163CT-6
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LH61664AK-50
Abstract: LH61665AK lh61665 LH5PV8512 16256S
Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating
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LH5P864N
5P1632/N-80/15
32SOP
DIP/40SOP
32DIP/32SOP/32TSOP
32TSOP
DIP/32SOP/32TSOP(
/32TS
44TSO
LH61664AK-50
LH61665AK
lh61665
LH5PV8512
16256S
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Untitled
Abstract: No abstract text available
Text: GM71 V S 16163C(CL) 1Mx16, 3.3V, 4K Ref, EDO Description Features The G M 7 1 V (S )1 6 1 6 3 C /C L is the new generation d y n a m ic R A M o r g a n iz e d 1 ,0 4 8 ,5 7 6 x 16 b it. G M 7 1 V (S )1 6 1 6 3 C /C L h as realiz ed h igh er density, higher perform ance and various functions by utilizing
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OCR Scan
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16163C
1Mx16,
GM71V
42SOJ
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PDF
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Untitled
Abstract: No abstract text available
Text: # GM71V16163C GM71VS16163CL 1,048,576 WORDS 16 b i t p »^isrsis^i'bin> Lr ¡iu e m iC O fi l _ ,0 . ,JiL i< t irSL x CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation
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GM71V16163C
GM71VS16163CL
GM71V
16163C/CL
42pin
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PDF
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The
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GM71C
16160B/BL
42SOJ
GGQ4C544
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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42-SDIP-600
Abstract: CF RM sot89 P2400F 12-DIPH-300
Text: PACKAGE DIMENSIONS Dim ensions in Milimeters 8-DIP-300 .n n n n LJ LI o U LJ 12-DIPH-300 12 n ri a n n n o tx u lj" 'U L J 'T T 6 KP 283 Cl C ff ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters •K-DIPH-300 16-DIP-300A nrn¡~ir~ir-|¡~ir~in o LJ LJ LJ LJ LJ LJ U
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8-DIP-300
12-DIPH-300
K-DIPH-300
16-DIP-300A
22-DIP-400
24-DIP-600B
OT-23
OT-89
-220-F
42-SDIP-600
CF RM sot89
P2400F
12-DIPH-300
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lh61664k
Abstract: LH62260K-70 LH61664 LH64260K-70 LH6B4400AK-70 LH61664K/S-70
Text: MEMORES ★Under development • Dynamic RAMs Configuration CapacíBy words x bits 256k x 4 Model No. Supply current Access time Cycle time (ns) MAX. (ns) MIN. Operating Standby (mA) MAX. (mA) MAX. 1 Supply voltage (V) Operation mode 5 ± 10% Fast page mode
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LH64256CD/CK/CZ-60
LH64256CD/CK/CZ-70
LH6V4256K-10
LH68128K-554SOP/40SOJ/
44TSOP
LH61664AN/AK/AS-70
LH61664K/S-70
LH61664K/S-80
LH62805K-60
44SOP/40SOJ/
lh61664k
LH62260K-70
LH61664
LH64260K-70
LH6B4400AK-70
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Si1014
Abstract: GM71C16160AJ-6
Text: GM71C16160A GM71CS16160AL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C16160A has realized higher density, higher performance and various functions by utilizing
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OCR Scan
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GM71C16160A
GM71CS16160AL
Si1014
GM71C16160AJ-6
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