Untitled
Abstract: No abstract text available
Text: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a [email protected], *corresponding author
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DEAR0000112)
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1N8024-GA SPICE
Abstract: No abstract text available
Text: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8024-GA
1N8024-GA.
05-SEP-2013
1N8024-GA
1N8024
TEMP-24)
88E-18
1N8024-GA SPICE
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1N8031-GA SPICE
Abstract: PIN diode SPICE model
Text: 1N8031-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8031-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8031-GA
1N8031-GA.
05-SEP-2013
1N8031-GA
1N8031
57E-18
1N8031-GA SPICE
PIN diode SPICE model
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Untitled
Abstract: No abstract text available
Text: Rapidly Maturing SiC Junction Transistors Featuring Current Gain β > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation S.G. Sundaresan, S. Jeliazkov, B. Grummel, R. Singh GeneSiC Semiconductor, Inc. 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA
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1N8034-GA SPICE
Abstract: No abstract text available
Text: 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8034-GA
1N8034-GA
05-SEP-2013
1N8034
46E-17
00E-05
26E-09
1N8034-GA SPICE
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Untitled
Abstract: No abstract text available
Text: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a [email protected], *corresponding author
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N00014-C-10-0104,
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1N8026-GA SPICE
Abstract: No abstract text available
Text: 1N8026-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8026-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8026-GA
1N8026-GA.
05-SEP-2013
1N8026-GA
1N8026
TEMP-24)
45E-15
1N8026-GA SPICE
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anode gate thyristor
Abstract: No abstract text available
Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a [email protected], *corresponding author
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5x1014
1x107
DEAR0000112)
anode gate thyristor
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1N8028-GA SPICE
Abstract: No abstract text available
Text: 1N8028-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8028-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8028-GA
1N8028-GA.
05-SEP-2013
1N8028-GA
1N8028
74E-13
1N8028-GA SPICE
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GA01PNS100-CAL SPICE
Abstract: No abstract text available
Text: GA01PNS100-CAL SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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GA01PNS100-CAL
05-SEP-2013
GA01PNS100-CAL
GA01PNS100
00E-25
28E-11
00E-03
GA01PNS100-CAL SPICE
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GA01PNS100-CAU SPICE
Abstract: No abstract text available
Text: GA01PNS100-CAU SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAU device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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GA01PNS100-CAU
05-SEP-2013
GA01PNS100-CAL
GA01PNS100
00E-25
28E-11
00E-03
GA01PNS100-CAU
GA01PNS100-CAU SPICE
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1N8035-GA SPICE
Abstract: No abstract text available
Text: 1N8035-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8035-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8035-GA
1N8035-GA
05-SEP-2013
1N8035
46E-17
00E-05
26E-09
1N8035-GA SPICE
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1N8030-GA SPICE
Abstract: No abstract text available
Text: 1N8030-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8030-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8030-GA
1N8030-GA.
05-SEP-2013
1N8030-GA
1N8030
57E-18
1N8030-GA SPICE
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Untitled
Abstract: No abstract text available
Text: Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Siddarth Sundaresan, Brian Grummel and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Place, Suite 155, Dulles VA 20166, U.S.A. ABSTRACT Electrical performance and reliability of SiC Junction Transistors SJTs and Schottky
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thyristor lifetime
Abstract: No abstract text available
Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: [email protected]; Phone: 703-996-8200x105.
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703-996-8200x105.
DE-FG0207ER84712,
thyristor lifetime
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Untitled
Abstract: No abstract text available
Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA [email protected] Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.
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DE-FG02-07ER84712)
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1N8033-GA SPICE
Abstract: No abstract text available
Text: 1N8033-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8033-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8033-GA
1N8033-GA
05-SEP-2013
1N8033
99E-17
87E-05
38E-10
1N8033-GA SPICE
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Untitled
Abstract: No abstract text available
Text: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.
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GA100XCP12
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1N8032-GA SPICE
Abstract: No abstract text available
Text: 1N8032-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8032-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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1N8032-GA
1N8032-GA
05-SEP-2013
1N8032
99E-17
87E-05
38E-10
1N8032-GA SPICE
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2CSC400002D0903
Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente
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2CSC400002D0903
2CSG210200R1211
ABB E 257 C30-230
S465502
2CSG035100R1211
2CSG210100R1211
ABB SACE sn 125
EA1733
LCD TV SCHEMA
S550284
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Untitled
Abstract: No abstract text available
Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA040TH65
OT-227
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Untitled
Abstract: No abstract text available
Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor
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GA060TH65
OT-227
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GA20JT06-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: GA20JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA20JT06-CAL.
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GA20JT06-CAL
sic/baredie/sjt/GA20JT06-CAL
GA20JT06-CAL.
27-FEB-2014
GA20JT06
00E-47
26E-28
2281E-10
33957E-9
20E-03
GA20JT06-CAL SPICE
high-temperature-sic-bare-die
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Untitled
Abstract: No abstract text available
Text: GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package • RoHS Compliant 100 V Schottky rectifier 225 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability
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GB02SHT01-46
Mil-PRF-19500
GB02SHT01
57E-18
40E-05
12E-11
00E-10
00E-03
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