STP4407
Abstract: mosfet 407 mosfet vgs 5v
Text: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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STP4407
STP4407
-30V/-12A,
-30V/-10A,
mosfet 407
mosfet vgs 5v
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mosfet 4407 8pin
Abstract: MOSFET 4407 a MIC4606 MOSFET 4407 4407 mosfet MIC4607 1800pf IR 4607 MIC4606/4607
Text: MIC4606/4607 Micrel MIC4606/4607 Dual 3A-Peak Open-Drain MOSFET Driver Preliminary Information General Description Features The MIC4606 and MIC4607 are BiCMOS/DMOS bufferdrivers constructed with complementary MOS outputs, where the drains of the final output totem pole have been left
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MIC4606/4607
MIC4606
MIC4607
1800pF
mosfet 4407 8pin
MOSFET 4407 a
MOSFET 4407
4407 mosfet
IR 4607
MIC4606/4607
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MOSFET 4407
Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
Text: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR410,
IRFU410
TA17445.
MOSFET 4407
IFR410
4406 mosfet
IFU410
IFR-410
MOSFET 4407 a
4404 mosfet
IRFU410
4407 mosfet
ADVANCED LINEAR DEVICES 4407
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MOSFET 4407
Abstract: irfu420 MOSFET 4407 a IRFR420 IRFR4209A TB334
Text: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR420,
IRFU420
TA17405.
MOSFET 4407
irfu420
MOSFET 4407 a
IRFR420
IRFR4209A
TB334
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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LP 1610
Abstract: SCHEMATIC VGA board
Text: LH7A400 User’s Guide 2007 August 27 Content Revisions This document contains the following changes to content, causing it to differ from previous versions. Minor typographical changes, where they do not affect content, are not tracked here. Record of Revisions
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LH7A400
LP 1610
SCHEMATIC VGA board
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Untitled
Abstract: No abstract text available
Text: IMPORTANT NOTICE Dear customer, As from June 1st, 2007 NXP Semiconductors has acquired the LH7xxx ARM Microcontrollers from Sharp Microelectronics. The following changes are applicable to the attached data sheet. In data sheets where the previous Sharp or Sharp Corporation references remain, please use the new
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MOSFET 4407 a
Abstract: MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin TC4407 c4407 4407E 4407M TC4406
Text: leluom Semiconductor, Inc. TC4406 TC4407 3A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The T C 4406 and T C 4407 are CM O S buffer-drivers constructed with com plem entary M OS outputs, w here the drains of the totem -pole output have been left separated so
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TC4406
TC4407
V-18V)
TC4406
TC4407
MOSFET 4407 a
MOSFET 4407
4406 mosfet
4407 mosfet
mosfet 4407 8pin
c4407
4407E
4407M
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MOSFET 4407
Abstract: mosfet 4407 8pin MOSFET 4407 a 4407 mosfet 1800pf
Text: MIC4606/4607 Dual 3A-Peak Open-Drain MOSFET Driver Preliminary Information General Description Features The M IC4606 and MIC4607 are BiCMOS/DM OS bufferdrivers constructed with complem entary MOS outputs, where the drains of the final output totem pole have been left
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MIC4606/4607
IC4606
MIC4607
1800pF
1800pF
MOSFET 4407
mosfet 4407 8pin
MOSFET 4407 a
4407 mosfet
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MOSFET 4407
Abstract: MOSFET 4407 a irfu420 IRFR4209A IRFR420 TB334
Text: IRFR420, IRFU420 S e m iconductor Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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TA17405.
IRFR420
O-252AA
IRFR420
IRFU420
O-251AA
IRFU420
IRFR420,
MOSFET 4407
MOSFET 4407 a
IRFR4209A
TB334
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diode 222r
Abstract: MOSFET 4407 a circuit 4407
Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*
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IRFD220R/221R/222R/223R
diode 222r
MOSFET 4407 a
circuit 4407
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Untitled
Abstract: No abstract text available
Text: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*
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IRFD220/221/222/223
IRFD220R/221R/222R/223R
s4-406
OOS4114
IRFD220,
RFD222,
IRFD223
RFD220R.
IRFD221R,
IRFD222R,
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IC4606
Abstract: MIC4606 MIC4607 4606B 1800pf MIC4606AJ
Text: MIC4606/4607 3A Dual O pen-Drain M O SFET Driver Preliminary Information General Description Features The MIC4606 and MIC4607 are BiCMOS/DMOS bufferdrivers constructed with complem entary MOS outputs, where the drains of the final output totem pole have been left
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MIC4606/4607
MIC4606
MIC4607
1800pF
1800pF
IC4606
4606B
MIC4606AJ
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Untitled
Abstract: No abstract text available
Text: LTC1148 LTC1148-3.3/LTC1148-5 u r m TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ nTU R€ S D €SCRIPTIOn • Ultra-High Efficiency: Over 95% Possible ■ Current-Mode Operation for Excellent Line and Load Transient Response
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LTC1148
LTC1148-3
3/LTC1148-5
160jaA
20juA
14-Pin
4VT014V
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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