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    441M Search Results

    441M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SLC1480-441MLB Coilcraft Inc General Purpose Inductor, 0.44uH, 20%, 1 Element, Ferrite-Core, SMD, 5351, ROHS COMPLIANT Visit Coilcraft Inc
    SLC1480-441MLD Coilcraft Inc General Purpose Inductor, 0.44uH, 20%, 1 Element, Ferrite-Core, SMD, 5351, ROHS COMPLIANT Visit Coilcraft Inc
    SLC1480-441ML Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc
    U773GA441M2071 Amphenol Communications Solutions 1X4 SFP ULTRA PORT CAGE Visit Amphenol Communications Solutions
    U77A441M2081 Amphenol Communications Solutions ExpressPort SFP+, High Speed Input Output Connectors, SFP PLUS 1X4 ELAST GASKET. Visit Amphenol Communications Solutions
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    441M Price and Stock

    Murata Manufacturing Co Ltd DLP31DN441ML4L

    CMC 70MA 4LN 440 OHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DLP31DN441ML4L Cut Tape 7,110 1
    • 1 $1.73
    • 10 $1.343
    • 100 $1.0422
    • 1000 $0.80698
    • 10000 $0.80698
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    DLP31DN441ML4L Reel 6,000 3,000
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    • 10000 $0.71375
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    Bristol Electronics DLP31DN441ML4L 3,829
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    TTI DLP31DN441ML4L Reel 3,000
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    • 10000 $0.714
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    Avnet Abacus DLP31DN441ML4L 11 Weeks 3,000
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    Microchip Technology Inc ATTINY441-MU

    IC MCU 8BIT 4KB FLASH 20QFN
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    DigiKey ATTINY441-MU Tray 2,043 1
    • 1 $1.16
    • 10 $1.16
    • 100 $1.16
    • 1000 $1.16
    • 10000 $1.16
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    Microchip Technology Inc ATTINY441-MU Tray 1,344 6 Weeks
    • 1 $1.16
    • 10 $1.16
    • 100 $0.96
    • 1000 $0.89
    • 10000 $0.85
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    NAC ATTINY441-MU Tray 980 1
    • 1 $1.26
    • 10 $1.26
    • 100 $1.14
    • 1000 $1.02
    • 10000 $1.02
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    Avnet Silica ATTINY441-MU 8 Weeks 490
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    EBV Elektronik ATTINY441-MU 7 Weeks 490
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    Microchip Technology Inc ATTINY441-MMH

    IC MCU 8BIT 4KB FLASH 20VQFN
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    DigiKey ATTINY441-MMH Tray 1,631 1
    • 1 $1.18
    • 10 $1.18
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    • 1000 $1.18
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    Microchip Technology Inc ATTINY441-MMH Tray 2,632 6 Weeks
    • 1 $1.18
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    • 100 $0.97
    • 1000 $0.9
    • 10000 $0.86
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    TME ATTINY441-MMH 1
    • 1 $1.16
    • 10 $1.12
    • 100 $1.05
    • 1000 $1.05
    • 10000 $1.05
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    NAC ATTINY441-MMH Tray 2,940 1
    • 1 $1.28
    • 10 $1.28
    • 100 $1.15
    • 1000 $1.04
    • 10000 $1.04
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    Avnet Silica ATTINY441-MMH 8 Weeks 490
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    Chip1Stop ATTINY441-MMH Tray 950
    • 1 $0.786
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    • 100 $0.778
    • 1000 $0.774
    • 10000 $0.774
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    EBV Elektronik ATTINY441-MMH 7 Weeks 490
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    United Chemi-Con Inc ELVA451VSN441MA35S

    CAP ALUM 450V POLAR
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    DigiKey ELVA451VSN441MA35S Bulk 794 1
    • 1 $9.58
    • 10 $6.801
    • 100 $9.58
    • 1000 $5.53625
    • 10000 $5.53625
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    Mouser Electronics ELVA451VSN441MA35S 200
    • 1 $10.06
    • 10 $8.73
    • 100 $7.42
    • 1000 $5.7
    • 10000 $5.7
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    United Chemi-Con Inc EKHE421VSN441MA25Z

    CAP ALUM 420V POLAR
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    DigiKey EKHE421VSN441MA25Z Bulk 400 1
    • 1 $9.98
    • 10 $7.011
    • 100 $9.98
    • 1000 $4.58196
    • 10000 $4.58196
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    441M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Revision 1.1 (November, 2004)


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    PDF 512Mb DDR400 400mil 441mil) 200MHz 400Mbps

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review


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    PDF 512Mb 400mil 441mil)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF 512Mb 400mil 441mil)

    Untitled

    Abstract: No abstract text available
    Text: THE EDGE LED Round Area Light – Type V Short ARE-EDR-5S-R3 BetaLED Catalog #: ARE - EDR - 5S - R3 - -D- - - - Rev. Date: 9/15/11 ø 23" [ 584mm ] 4.0" [ 102mm ] 21.4" [ 543mm ] 13.5" [ 344mm ] 17.4" [ 441mm ] 3.9" [ 98mm ] Notes: Product Family ARE Optic


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    PDF 584mm 102mm 543mm 344mm 441mm 118mm 350mA 525mA 700mA ITL68092

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8 Pb-Free DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.1 October, 2004 Rev. 1.1 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) Pb-Free DDR SDRAM 512Mb B-die Revision History


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    PDF 512Mb 400mil 441mil)

    DDR333 512MB CL2.5

    Abstract: DDR266 DDR333 DDR400
    Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF 512Mb 400mil 441mil) DDR333 512MB CL2.5 DDR266 DDR333 DDR400

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003)


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    PDF 512Mb DDR400 400mil 441mil) 200MHz 400Mbps

    DDR333

    Abstract: DDR400
    Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Rev. 1.0 October 2003


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    PDF 512Mb DDR400 400mil 441mil) 200MHz 400Mbps DDR333

    DDR266

    Abstract: DDR333
    Text: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.1 Rev. 0.1 Agust. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)


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    PDF 512Mb 400mil 441mil) DDR266 DDR333

    DDR266

    Abstract: DDR333 DDR400
    Text: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF 512Mb 400mil 441mil) DDR266 DDR333 DDR400

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.0 Rev. 0.0 Feb. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)


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    PDF 512Mb 400mil 441mil)

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


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    PDF SCT2450KE 450mW O-247 R1102B

    SLIM-MOX20403

    Abstract: EX035D-16.000M SLIM-MOX10603 SLIM-MOX10102 EX035D20.000M SLIM-MOX10003 SM10203 EX031E-12.000M SLIM-MOX104RD SLIM-MOX20802
    Text: Ohmite’s Slim-Mox provides stable performance for a wide range of resistance values, with voltage ratings up to 25K. Low temperature coefficients are available for high stability circuit applications. The spacesaving planar package offers and alternative to traditional


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    PDF SM102031006FE SM102 SM100 1-866-9-OHMITE SLIM-MOX20403 EX035D-16.000M SLIM-MOX10603 SLIM-MOX10102 EX035D20.000M SLIM-MOX10003 SM10203 EX031E-12.000M SLIM-MOX104RD SLIM-MOX20802

    Untitled

    Abstract: No abstract text available
    Text: Slim-Mox Ohmite’s Slim-Mox provides stable performance for a wide range of resistance values, with voltage ratings up to 25K. Low temperature coefficients are available for high stability circuit applications. The spacesaving planar package offers and alternative to traditional


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    PDF SLIM-MOX100 SLIM-MOX101 SLIM-MOX102 SLIM-MOX103 SLIM-MOX104 SLIM-MOX106 SLIM-MOX108 SLIM-MOX202 SLIM-MOX204 SLIM-MOX206

    K4S280832CNL

    Abstract: No abstract text available
    Text: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8


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    PDF K4S280832C-N K4S280832C-N 54-sTSOP K4S280832CNL

    MacroChip Series

    Abstract: High Voltage Surface Mount Thick Film
    Text: Macrochip Series High Voltage/High Resistance Precision Thick Film Surface Mount Ohmite’s MacroChip resistors bring precision high voltage capabilities to surface mount applications. Designed with thick film on alumina substrate technology, the resistors can be provided in precision tolerances, high voltage ratings, and high resistance values.


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    PDF MC102827501JE MC102821002JE MC102821252JE MC102821502JE MC102821752JE MC102822002JE MC102822502JE 1-866-9-OHMITE MC102825002JE MC102827502JE MacroChip Series High Voltage Surface Mount Thick Film

    ISLA110P50

    Abstract: ISLA110P50IRZ ISLA112P50 ISLA118P50 500MSPS 0x60-0x64
    Text: ISLA110P50 Features The ISLA110P50 is a low-power, high-performance, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard CMOS process. The ISLA110P50 is part of a pin-compatible portfolio of 8, 10 and 12-bit A/Ds. This


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    PDF ISLA110P50 ISLA110P50 500MSPS 12-bit KAD551XP-50 250MSPS 500MSPS. 500MHz JESD-MO220. ISLA110P50IRZ ISLA112P50 ISLA118P50 0x60-0x64

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


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    PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


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    PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP


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    PDF KM48S16030BN 128Mb A10/AP

    MAX643

    Abstract: MAX630/MAX4193 MAX8212 equivalent max630 inverter /S69 2LF
    Text: 19-0915; Rev 1; 12/03 CMOS Micropower Step-Up Switching Regulator Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum-size DC-DC converter circuits in the 5mW to 5W range. The MAX630 and MAX4193 provide all control and power


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    PDF MAX630 MAX4193 375mA MAX643 MAX630/MAX4193 MAX8212 equivalent inverter /S69 2LF

    l55b

    Abstract: 2200 microfarad electrolytic capacitor J501M 148X E1600c mil-c-3965 22000 microfarad capacitor 200D607X0040A1
    Text: A COMPANY TYPE 2 0 0 D. 202D W et Tantalum C apacitors OF SPRAGUE W et Sintered Anode T a n t a l e x Components T a n t a p a k ® C apacitor Assem blies FEATURES Wet Sintered Anode capacitor assemblies are widely used in filter, coupling, bypass and time-delay circuits in


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    max630

    Abstract: No abstract text available
    Text: y n y j x i y H CMOS M icropow er S tep-U p S w itch in g R egulator Features General Description Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum size DC-DC converter circuits in the 5 milliwatt to 5 watt range. The MAX630 and MAX4193 provide all


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    PDF MAX630 MAX4193 375mA currMAX641 AX642 AX643

    DHS43

    Abstract: 40KV 461Z-30KV
    Text: HIGH VOLTAGE CERAMIC CAPACITORS CLASS I & CLASS III mtifintn PART NUMBERING SYSTEM CLASS I 1 VOLTAGE Identified by a two-digit number in KVDC. TEMPERATURE CHARACTERISTICS AND T.C. TOLERANCE Per standard EIA specifications. CAPACITANCE TOLERANCE . M=±20% CAPACITANCE VALUE


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    PDF DHS20 N4700561M-10KV DHS30 N4700122M-10KV N4700 182M-10KV DHS38 282M-10KV DHS43 40KV 461Z-30KV