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    44N50P Search Results

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    44N50P Price and Stock

    Littelfuse Inc IXFH44N50P

    MOSFET N-CH 500V 44A TO247AD
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    DigiKey IXFH44N50P Tube 291 1
    • 1 $11.67
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    Newark IXFH44N50P Bulk 300
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    RS IXFH44N50P Bulk 8 Weeks 30
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    Littelfuse Inc IXFR44N50P

    MOSFET N-CH 500V 24A ISOPLUS247
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    DigiKey IXFR44N50P Tube 289 1
    • 1 $11.41
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    • 100 $8.63567
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    Newark IXFR44N50P Bulk 300
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    Littelfuse Inc IXFK44N50P

    MOSFET N-CH 500V 44A TO264AA
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    DigiKey IXFK44N50P Tube 260 1
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    RS IXFK44N50P Bulk 8 Weeks 25
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    Littelfuse Inc IXTQ44N50P

    MOSFET N-CH 500V 44A TO3P
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    DigiKey IXTQ44N50P Tube 300
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    Littelfuse Inc IXFT44N50P

    MOSFET N-CH 500V 44A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT44N50P Tube 1
    • 1 $13.87
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    • 100 $8.441
    • 1000 $7.05375
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    Newark IXFT44N50P Bulk 300
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    44N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    44N50

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 44N50P 405B2 44N50

    44N50P

    Abstract: ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247

    44n50

    Abstract: 44N50P IXFH44N50P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 44N50P IXFT 44N50P IXFK 44N50P VDSS ID25 RDS on trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2 IXFH44N50P 44n50 44N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 44N50P O-247 O-264 IXFH44N50P 03-21-06-B

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω ≤ 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM


    Original     		PDF 44N50P 03-21-06-B

    IXFH44N50P

    Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original     		PDF 44N50P O-247 IXFH44N50P 03-21-06-B 44n50p ixfh 44n50p C4455 IXFK44N50P

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2

    44N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2 44N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 44N50P ISOPLUS247TM 03-21-06-B

    44N50

    Abstract: 44N50P IXTQ
    Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A ≤ 140 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM


    Original     		PDF 44N50P 03-21-06-B 44N50 44N50P IXTQ

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p