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    J242

    Abstract: No abstract text available
    Text: blE D • 44TbS0S GDlgTTi bOb ■ H I T M 2 S J 2 4 2 L , 2 S J2 4 2 s -H I T A C H I / OPTOELECTRONICS ) Silicon P Channel MOS FET Application LDPAK High speed power switching Features • • • • Low on-resistance High speed switching Low drive current


    OCR Scan     		PDF 2SJ242L 2SJ242S 44TbS0S 2SJ215. -2SJ242 2SJ242 J242

    2SK1665

    Abstract: RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16
    Text: 44Tb2D5 0D134ÛE 7^5 « H i m 2SK1665- tlE T> HITACHI/ O P T O E L E C T R O N I C S SILICON N -CHANNEL MOS FET 5 .0 m u . T ii HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device


    OCR Scan     		PDF 44Tb2D5 0D134Ã 44clbS0S 2SK1665 2SK1665 RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16