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    44TSO Search Results

    44TSO Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CY74FCT2244TSOC Texas Instruments Octal Buffers/Line Drivers with 3-State Outputs and Series Damping Resistors 20-SOIC -40 to 85 Visit Texas Instruments Buy
    CY74FCT244TSOCT Texas Instruments Octal Buffers and Line Drivers with 3-State Outputs 20-SOIC -40 to 85 Visit Texas Instruments Buy
    CY74FCT244TSOC Texas Instruments Octal Buffers and Line Drivers with 3-State Outputs 20-SOIC -40 to 85 Visit Texas Instruments Buy
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    44TSO Price and Stock

    Texas Instruments CY74FCT2244TSOC

    IC BUF NON-INVERT 5.25V 20SOIC
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    DigiKey CY74FCT2244TSOC Tube 825 1
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    Mouser Electronics CY74FCT2244TSOC 864
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    Ameya Holding Limited CY74FCT2244TSOC 3,125
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    Texas Instruments CY74FCT244TSOC

    IC BUF NON-INVERT 5.25V 20SOIC
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    DigiKey CY74FCT244TSOC Tube 376 1
    • 1 $0.97
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    Mouser Electronics CY74FCT244TSOC 1,946
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    Bristol Electronics CY74FCT244TSOC 8
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    Rochester Electronics CY74FCT244TSOC 17,537 1
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    Texas Instruments CY74FCT244TSOCT

    IC BUF NON-INVERT 5.25V 20SOIC
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    DigiKey CY74FCT244TSOCT Cut Tape 11 1
    • 1 $0.84
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    CY74FCT244TSOCT Reel 2,000
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    CY74FCT244TSOCT Digi-Reel 1
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    Mouser Electronics CY74FCT244TSOCT 952
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    Bristol Electronics CY74FCT244TSOCT 89
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    Rochester Electronics CY74FCT244TSOCT 23,105 1
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    Rochester Electronics LLC QS74FCT544TSO

    IC BUS INTERFACE/TXRX 5V
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    DigiKey QS74FCT544TSO Bulk 185
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    Rochester Electronics LLC QS74FCT244TSO

    IC BUF/DRIVER 5V
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    DigiKey QS74FCT244TSO Bulk 355
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    44TSO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


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    PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    KS32P6632

    Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
    Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor


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    PDF 056KB KS32P6632 NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


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    PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    K6X4016C3F

    Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
    Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.


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    PDF K6X4016C3F 256Kx16 44-TSOP2-400R K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


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    PDF K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


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    PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    MCP3909 application note

    Abstract: PIC18 example codes Spi slave PIC18 example C18 codes ADC TM162JCAWG1 hOW TO READ mcp3909 Explorer-16 PIC18 external interrupt example codes PIC18 example codes SPI master mini project using PIC microcontroller with sources code LCD control using dsPIC33
    Text: MCP3909 ADC Evaluation Board for 16-Bit MCUs User’s Guide 2008 Microchip Technology Inc. DS51777A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF MCP3909 16-Bit DS51777A DS51777A-page MCP3909 application note PIC18 example codes Spi slave PIC18 example C18 codes ADC TM162JCAWG1 hOW TO READ mcp3909 Explorer-16 PIC18 external interrupt example codes PIC18 example codes SPI master mini project using PIC microcontroller with sources code LCD control using dsPIC33

    MR0A16A

    Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
    Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    PDF MR0A16A 64Kx16 20-years 44-TSOP 48-BGA MR0A16A SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35

    MR2A16A

    Abstract: MR2A16ATS35C
    Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The


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    PDF MR2A16A 16-Bit MR2A16A 304-bit MR2A16ATS35C

    tsop 48 PIN type2

    Abstract: 48BGA MR0A16AMA35
    Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature


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    PDF MR0A16A 20-years MR0A16A 576-bit EST354 tsop 48 PIN type2 48BGA MR0A16AMA35

    0.35mm pitch BGA

    Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


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    PDF MR4A08B 20-years AEC-Q100 MR4A08B 216-bit MR4A08B, EST356 0.35mm pitch BGA MR4A08BCYS35R MR4A08BC mr4a08bcys MR4A08BCYS35

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


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    PDF 1000E-TC 16M-Bit /1Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


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    PDF 1000B-TC 64M-Bit /4Mx16) 100ns 120ns 100pF 44-TSOP2-400

    MR27T802F

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    MR27V6402G

    Abstract: OKI marking code
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    MR27T3202F

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF FEDR27T3202F-02-04 MR27T3202F 152-word 16-bit 304-word MR27T3202F-xxxMA 44-pin OP44-P-600-1 MR27T3202F-xxxTP MR27T3202F

    MR27V802F

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    MR27T1602F

    Abstract: mr27t1602
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    MR27V1602F

    Abstract: oki marking OKI date code
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    K6T4016C3B-TB70

    Abstract: K6T4016C3B-B
    Text: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996


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    PDF K6T4016C3B 256Kx16 15/75mA 130mA 100pF K6T4016C3B-TB70 K6T4016C3B-B

    54TSOP2

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'


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    PDF 44TSOP2-400F 50-TSOP2-400F 54-TSOP2-400F 86-TSOP2-400F 54TSOP2

    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


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    PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    Scans-0012741

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


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    PDF KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 KM616V4002BI/BLI 44-SOJ-400 44-TSO P2-400F Scans-0012741