uras 14 pinout
Abstract: No abstract text available
Text: K M 4 4 V 1 0 0 0 /L J Q SAM SUNG im x 4 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG EL ECTRONI CS INC FEATUHtö •I SSE 7^4142 0 0 11 3 4 5 ATT « S I I G K GENERAL DESCRIPTION 2 V I *7 The Samsung KM 44V1000/L is a high speed
|
OCR Scan
|
PDF
|
KM44V1000/L
130ns
150ns
180ns
44V1000/L
576x4
uras 14 pinout
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The
|
OCR Scan
|
PDF
|
125AJ
KMM372V125AJ
KMM372V125A
x16bit
110ns
130ns
300mil
48pin
168-pin
|
KM44V1000C
Abstract: No abstract text available
Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C 44V1000C/CL/CLL-6 60ns 15ns 110ns 44V1000C/CL/CLL-7 70ns 20ns 130ns 44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation
|
OCR Scan
|
PDF
|
KM44V1OOOC/CL/CLL
KM44V1000C/CL/CLL-6
110ns
KM44V1000C/CL/CLL-7
130ns
KM44V1000C/CL/CLL-8
KM44V1000C/CL/CLL
150ns
20-LEAD
KM44V1
KM44V1000C
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44V1004C/CL/CLL 1 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tac tHPC 44V1004C/CL/CLL-6 60ns 15ns 110ns 24ns 44V1004C/CL/CLL-7 70ns 20ns 130ns 29ns 44V1004C/CL/CLL-8 80ns
|
OCR Scan
|
PDF
|
KM44V1004C/CL/CLL
KM44V1004C/CL/CLL-6
110ns
KM44V1004C/CL/CLL-7
130ns
KM44V1004C/CL/CLL-8
150ns
cycles/16ms
cycles/128m:
20-LEAD
|
Untitled
Abstract: No abstract text available
Text: 44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44V1004DT
1b4142
|
Untitled
Abstract: No abstract text available
Text: 44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: Ï rac tcAc tfiC 70ns 20ns 130ns 44V1000BLL-8 80ns 20ns 150ns 44V1000BLL-10 100ns 25ns 180ns 44V1000BLL-7 • • • • •
|
OCR Scan
|
PDF
|
KM44V1000BLL
KM44V1000BLL-7
KM44V1000BLL-8
KM44V1000BLL-10
100ns
130ns
150ns
180ns
KM44V1000BLL
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372V122CJ/CT KMM372V122CJ/CT Fast Page Mode 1 Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V GEN ER AL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC 60ns
|
OCR Scan
|
PDF
|
KMM372V122CJ/CT
KMM372V122CJ/CT
KMM372V122C
48pin
168-pin
20nso
|
IC07
Abstract: KM44C1000D KM44V1000D
Text: 44V1000DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Rags Mode CMOS DRAMs. Fast Pag Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44V1000DJ
71b4142
IC07
KM44C1000D
KM44V1000D
|
Untitled
Abstract: No abstract text available
Text: 44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
KM44V1004DJ
16Mx4,
512Kx8)
7Th4142
D347c
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6
|
OCR Scan
|
PDF
|
M372V225A
KMM372V225AJ
2Mx72
372V225A
KMM372V225A
Mx16bit
400mil
110ns
130ns
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS
|
OCR Scan
|
PDF
|
KMM364V120CJ/CT
KMM364V120CJ/CT
1Mx64
364V120C
KMM364V120C
110ns
130ns
48pin
|
1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
|
OCR Scan
|
PDF
|
KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
|
Untitled
Abstract: No abstract text available
Text: KMM372V122CJ/CT DRAM MODULE KM M372V122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V122C consists of sixteen CMOS
|
OCR Scan
|
PDF
|
KMM372V122CJ/CT
M372V122CJ/CT
1Mx72
KMM372V122C
KMM372V122C-7
300mil
110ns
130ns
|
Untitled
Abstract: No abstract text available
Text: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen
|
OCR Scan
|
PDF
|
KMM372V120CJ/CT
KMM372V120CJ/CT
1Mx72
KMM372V120C
300mil
48pin
168-pin
cycles/16ms
1000mil)
|
|
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 T bm M5 44V1000B/BL GGlSfiG3 SDU CMOS ORAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 44V1000B/BL is a high speed CMOS 1,048,576 b it x 4 D ynam ic Random A ccess M em ory. Its
|
OCR Scan
|
PDF
|
KM44V1000B/BL
KM44V1000B/BL
KM44V1000B/BL-7
130ns
KM44V1000B/BL-8
150ns
180ns
KM44V1000B/BL-10
20-LEAD
|
Untitled
Abstract: No abstract text available
Text: KMM332V120CT DRAM MODULE KMM332V120CT Fast Page Mode 1Mx32 DRAM DIMM based on 1Mx4 Low Power, 1K Refresh , 3.3V G EN ERA L D ESC RIPTIO N The Samsung KMM332V120CT is a 1M bit x 32 Dynamic RAM low power memory module. The Samsung KMM332V120CT consists ot eight CMOS
|
OCR Scan
|
PDF
|
KMM332V120CT
KMM332V120CT
1Mx32
20-pin
72-pin
00E004Ã
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM374F124AJ KMM374F124AJ EDO Mode without buffer 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Sam sung KM M 374F124AJ is a 1M bit x 72 • Part Identification D ynam ic RAM high density m em ory module. The
|
OCR Scan
|
PDF
|
KMM374F124AJ
KMM374F124AJ
1Mx72
1Mx16
374F124AJ
cycles/16ms
1Mx16bit
400mil
|
KM44V1004CJ
Abstract: 44V1004 ASX12
Text: CMOS DRAM 44V1004C/C L/CLL 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 44V1004C/CL/CLL is a CMOS high sp e e d 1 ,0 4 8 ,5 7 6 x 4 D y n a m ic R a n d o m A c c e s s Memory. Its design is optimized for high performance
|
OCR Scan
|
PDF
|
KM44V1004C/C
KM44V1004C/CL/CLL
20-LEAD
KM44V1004C/CL/CLL
KM44V1004CJ
44V1004
ASX12
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The S am sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The KMM364V120C - 6 K M M 364V120C - 7
|
OCR Scan
|
PDF
|
KMM364V120CJ/CT
1Mx64
KMM364V120CJ/CT
364V120C
48pin
168-pin
KMM364V120C
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372V120CJ1/CT1 KMM372V120CJ1/CT1 Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V120C - 6
|
OCR Scan
|
PDF
|
KMM372V120CJ1/CT1
KMM372V120CJ1/CT1
1Mx72
372V120C
KMM372V120C
110ns
130ns
48pin
168-pin
|
Untitled
Abstract: No abstract text available
Text: K M 4 4 V 1OOODT ELECTRONICS CMOS DRAM 1M x 4 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM44V1000DT
QG347bc
7Tb4142
003477D
|
k2624
Abstract: No abstract text available
Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#
|
OCR Scan
|
PDF
|
KM41C4000D#
C4000D
KM41V4000D#
KM41V4000W-L
KM44C1000D#
KM44C10OOD
KM44C1003D#
KM44C1004D#
KM44C1004D
KM44C1005D#
k2624
|
KM44V1000BT
Abstract: AE12A
Text: 44V1000B/BL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung 44V1000B/BL is a high speed CMOS 1,048,576 b it x 4 D ynam ic Random A ccess M emory. Its design is op tim ized fo r high perform ance a p plication s
|
OCR Scan
|
PDF
|
KM44V1000B/BL
KM44V1000B/BL-7
KM44V1000B/BL-8
KM44V1000B/BL-10
100ns
130ns
150ns
180ns
KM44V1000B/BL
KM44V1000BT
AE12A
|
