TO-247 65c7045
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R045C7 1Description TO-247
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IPW65R045C7
O-247
TO-247 65c7045
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65c7045
Abstract: IPZ65R045C7 SMD qf
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R045C7 1Description PG-TO247-4
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650VCoolMOSTMC7PowerTransistor
IPZ65R045C7
IPZ65R045C7
PG-TO247-4
65c7045
SMD qf
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TO-247 65c7045
Abstract: IPW65R045C7 65C7045
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R045C7 1Description TO-247
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650VCoolMOSTMC7PowerTransistor
IPW65R045C7
IPW65R045C7
O-247
TO-247 65c7045
65C7045
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65C7045
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab
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650VCoolMOSTMC7PowerTransistor
IPP65R045C7
IPP65R045C7
O-220
65C7045
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65C7045
Abstract: TO-247 65c7045
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab
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IPP65R045C7
O-220
65C7045
TO-247 65c7045
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK
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IPB65R045C7
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65C7045
Abstract: DT80A
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK
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650VCoolMOSTMC7PowerTransistor
IPB65R045C7
IPB65R045C7
65C7045
DT80A
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smd diode 46A
Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC260D,
FSYC260R
smd diode 46A
1E14
2E12
FSYC260D
FSYC260D1
FSYC260D3
FSYC260R
FSYC260R1
FSYC260R3
46a transistor smd
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
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FSYC260D,
FSYC260R
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1E14
Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC260D,
FSYC260R
1E14
2E12
FSYC260D
FSYC260D1
FSYC260D3
FSYC260R
FSYC260R1
FSYC260R3
Rad Hard in Fairchild for MOSFET
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1E14
Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 46A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSYC260D,
FSYC260R
36MeV/mg/cm2
MIL-PRF-19500,
MIL-PRF-19500.
1E14
2E12
FSYC260D
FSYC260D1
FSYC260D3
FSYC260R
FSYC260R1
FSYC260R3
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC260D,
FSYC260R
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smd transistor 46B
Abstract: smd transistor marking 47B SMD TRANSISTOR MARKING 46B 46B smd SMD TRANSISTOR MARKING 1B NPN marking 47b smd transistor marking 1E smd marking 47B SMD TRANSISTOR MARKING 1F TRANSISTOR SMD catalog
Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number BC847A product family SOT-23 Plastic-Encapsulate Biploar Transistors
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BC847A
OT-23
100mA
225mW
100MHz
smd transistor 46B
smd transistor marking 47B
SMD TRANSISTOR MARKING 46B
46B smd
SMD TRANSISTOR MARKING 1B
NPN marking 47b
smd transistor marking 1E
smd marking 47B
SMD TRANSISTOR MARKING 1F
TRANSISTOR SMD catalog
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smd transistor 46B
Abstract: SMD TRANSISTOR MARKING 46B smd transistor marking 47B 46B smd smd transistor 1g SMD TRANSISTOR MARKING 1B sot23 marking 47C BC849C BC846A BC847A
Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number BC847B product family SOT-23 Plastic-Encapsulate Biploar Transistors
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BC847B
OT-23
100mA
225mW
100MHz
smd transistor 46B
SMD TRANSISTOR MARKING 46B
smd transistor marking 47B
46B smd
smd transistor 1g
SMD TRANSISTOR MARKING 1B
sot23 marking 47C
BC849C
BC846A
BC847A
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1E14
Abstract: 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET
Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYC164R,
FSPYC164F
FSPYC164F
1E14
2E12
FSPYC164D1
FSPYC164R3
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC160D,
FSYC160R
2E12
FSYC160D
FSYC160D1
FSYC160D3
FSYC160R
FSYC160R1
FSYC160R3
FSYC160R4
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2E12
Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSYC160D,
FSYC160R
2E12
FSYC160D
FSYC160D1
FSYC160D3
FSYC160R
FSYC160R1
FSYC160R3
FSYC160R4
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1E14
Abstract: 2E12 FSPYC164D1 FSPYC164R3 relay 12V, 70A
Text: FSPYC164R, FSPYC164F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYC164R,
FSPYC164F
1E14
2E12
FSPYC164D1
FSPYC164R3
relay 12V, 70A
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2E12
Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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FSYC160D,
FSYC160R
2E12
FSYC160D
FSYC160D1
FSYC160D3
FSYC160R
FSYC160R1
FSYC160R3
FSYC160R4
Rad Hard in Fairchild for MOSFET
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1E14
Abstract: 2E12 FSPYC164D1 FSPYC164R3
Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYC164R,
FSPYC164F
to300K
FSPYC164F
1E14
2E12
FSPYC164D1
FSPYC164R3
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Untitled
Abstract: No abstract text available
Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPYC164R,
FSPYC164F
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSYC260D,
FSYC260R
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smd code 46n
Abstract: SPB46N03L smd diode 46A 46n03l
Text: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q
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SPP46N03L
SPB46N03L
SPB46N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4147-A2
Q67040-S4743-A3
smd code 46n
smd diode 46A
46n03l
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Untitled
Abstract: No abstract text available
Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSYC160D,
FSYC160R
FSYC160R
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