ASI10683
Abstract: ULBM25 470 6L
Text: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 25 W/470 MHz • Omnigold Metalization System
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ULBM25
ULBM25
ASI10683
470 6L
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ASI10685
Abstract: ULBM45 U 318 m
Text: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold Metalization System
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ULBM45
ULBM45
ASI10685
ASI10685
U 318 m
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ULBM35
Abstract: ASI10684
Text: ULBM35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM35 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Internal Input matching Network • PG = 6.0 dB at 35 W/470 MHz
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ULBM35
ULBM35
ASI10684
ASI10684
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ULBM15
Abstract: No abstract text available
Text: ULBM15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM15 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.5 dB at 15 W/470 MHz • Omnigold Metalization System
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ULBM15
ULBM15
ASI10905
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MRF650
Abstract: 470 6L
Text: MRF650 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF650 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold Metalization System
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MRF650
MRF650
470 6L
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Untitled
Abstract: No abstract text available
Text: BLU20/12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLU20/12 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 20 W/470 MHz • Omnigold Metalization System
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BLU20/12
BLU20/12
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CM20-12A
Abstract: No abstract text available
Text: CM20-12A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CM20-12A is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.2 dB at 20 W/470 MHz • Omnigold Metalization System
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CM20-12A
CM20-12A
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capacitor 22PF
Abstract: capacitor 330pF microstrip line M142 SD1391 120142 210PF
Text: SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . PRELIMINARY DATA 470 MHZ 24 VOLTS EFFICIENCY 50% MIN. POUT = 15 W WITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER .230 x .360 6LFL M142 BRANDING SD1391 ORDER CODE SD1391 PIN CONNECTION
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SD1391
SD1391
capacitor 22PF
capacitor 330pF
microstrip line
M142
120142
210PF
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Untitled
Abstract: No abstract text available
Text: i, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS COMMON EMITTER POUT = 45 W MIN. WITH 5.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1434 BRANDING SD1434 PIN CONNECTION
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SD1434
SD1434
045/L14
B65/gl.
blO/12
73J/18
10S/E
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Unelco
Abstract: M111 SD1434 Transistor sd1434
Text: SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . 470 MHz 12.5 VOLTS COMMON EMITTER POUT = 45 W MIN. WITH 5.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1434 BRANDING SD1434 PIN CONNECTION DESCRIPTION The SD1434 is a 12.5 V Class C epitaxial silicon
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SD1434
SD1434
Unelco
M111
Transistor sd1434
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Unelco
Abstract: SD1434 teflon M111 M111
Text: SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . 470 MHz 12.5 VOLTS COMMON EMITTER P OUT = 45 W MIN. WITH 5.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1434 BRANDING SD1434 PIN CONNECTION DESCRIPTION The SD1434 is a 12.5 V Class C epitaxial silicon
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SD1434
SD1434
Unelco
teflon M111
M111
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SD1488
Abstract: M111
Text: SD1488 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS EFFICIENCY 50% COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 dB GAIN .500 6LFL M111 EPOXY SEALED ORDER CODE SD1488 BRANDING SD1488 PIN CONNECTION DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon
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SD1488
SD1488
M111
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SD1488
Abstract: M111
Text: SD1488 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS EFFICIENCY 50% COMMON EMITTER POUT = 38 W MIN. WITH 5.8 dB GAIN .500 6LFL M111 EPOXY SEALED ORDER CODE SD1488 BRANDING SD1488 PIN CONNECTION DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon
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SD1488
SD1488
M111
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MRF648
Abstract: MRF648 applications MRF648 Data Sheet MRF648 equivalent
Text: MRF648 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF648 is Designed for 12.5 V UHF large signal amplifier applications up to 512 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 4.4 dB at 60 W/470 MHz
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MRF648
MRF648
MRF648 applications
MRF648 Data Sheet
MRF648 equivalent
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MSC1429
Abstract: No abstract text available
Text: SD1429 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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SD1429
SD1429
MSC1429
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M111
Abstract: MS1504 MS1510 6lfl
Text: MS1510 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Efficiency 55% !" Common Emitter !" POUT = 38 W Min.
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MS1510
MS1510
MSC1627
M111
MS1504
6lfl
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trim capacitor
Abstract: 606-LF SD1391 microstrip line
Text: SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . P RELIMINARY DATA 470 MHZ 24 VOLTS EFFICIENCY 50% MIN. POUT = 15 W WITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER .2 30 x .3 60 6LF L M1 4 2 BRANDING SD1391 O R DE R CODE SD1391 PIN CONNECTION
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SD1391
SD1391
trim capacitor
606-LF
microstrip line
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MRF641
Abstract: No abstract text available
Text: MRF641 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF641 is Designed for Class C, FM Land Mobile Applications up to 512 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.8 dB at 15 W/470 MHz • Omnigold Metalization System
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MRF641
MRF641
VEBO67
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MRF646
Abstract: Transistor MRF646 5460a
Text: MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512 MHz. A C 1 3 2x Ø N FU LL R D FEATURES: • Internal Input Matching Network • PG = 4.8 dB at 45 W/470 MHz
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MRF646
MRF646
Transistor MRF646
5460a
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SD1429
Abstract: M111 2SD1429
Text: SD1429 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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SD1429
SD1429
V12-20
MSC1644
M111
2SD1429
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Untitled
Abstract: No abstract text available
Text: <£e.mi-Condu.cioi {Products., fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227*6005 FAX: (973) 376-8960 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz
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BLU30/28
OT119)
MCA451
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transistor marking code 12W
Abstract: transistor marking code 12W 80 8w RF POWER TRANSISTOR NPN M111 15 w RF POWER TRANSISTOR NPN TRANSISTOR C 460 865 RF transistor marking code 12w INTEGRATED CIRCUIT DATE code stmicroelectronics marking 12W
Text: SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ POUT = 38 W MIN. WITH 5.8 dB GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon
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SD1488
SD1488
transistor marking code 12W
transistor marking code 12W 80
8w RF POWER TRANSISTOR NPN
M111
15 w RF POWER TRANSISTOR NPN
TRANSISTOR C 460
865 RF transistor
marking code 12w
INTEGRATED CIRCUIT DATE code stmicroelectronics
marking 12W
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TRF559
Abstract: XO 18 XO-72 11324 CE125
Text: 450. 5 1 2 M H z C L A S S C FOR M O BILE A P P L IC A T IO N S P « rt m in W *o Pin Gp m in (V) (M H z) (WJ (dB) 7,5 7,5 7,5 0,25 0,8§ 3 470 470 470 0,02 0,2 0,475 11 6 8 V cc PACKAGE TYPE C O N F IG . T O -46 (CB-401 ) SD 1132-4 SD 1115-2 SD 1482 XO-72 SL
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XO-72
CB-401
CB-71
CB-438)
CB-3011
ICB-3121
TRF559
XO 18
11324
CE125
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BLU45/12
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E D • 711002b 00b273b b25 ■ PHIN BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features
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711002b
00b273b
BLU45/12
OT-119
G0bS743
BLU45/12
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