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    Infineon Technologies AG 47N60S5

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    47N60S5 Datasheets Context Search

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    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    47N60

    Abstract: 47N60S5 SPW47N60S5 P-TO247
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60 47N60S5 SPW47N60S5 P-TO247

    47N60S5

    Abstract: SPW47N60S5
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 SPW47N60S5

    47N60S5

    Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
    Text: 47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		PDF SPW47N60S5 P-TO247 SPWx0N60S5 Q67040-S4240 47N60S5 47N60S5 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s

    47N60S5

    Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
    Text: 47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		PDF SPW47N60S5 SPWx0N60S5 P-TO247 47N60S5 Q67040-S4240 SPW47N60S5 47N60S5 47N60 F47A DT 94 47n60s5 to247

    47n60s5

    Abstract: SPW47N60S5 47n60 SPW47N60 47n60s
    Text: 47N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47n60s5 SPW47N60S5 47n60 SPW47N60 47n60s

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    47N60S5

    Abstract: 47n60 SPW47N60S5
    Text: 47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances


    Original     		PDF SPW47N60S5 SPWx0N60S5 SPW47N60S5 P-TO247 47N60S5 Q67040-S4140 47N60S5 47n60

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    47N60S5

    Abstract: 47N60 SPW47N60S5 spw47n60
    Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 47N60 SPW47N60S5 spw47n60