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    48 13NHG Search Results

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    13nhg

    Abstract: 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH

    13nhg

    Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G

    13nhg

    Abstract: 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices


    Original     		PDF NTD4813NH 25aws NTD4813NH/D 13nhg 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH NTD4813NH/D

    4813NH

    Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4813NH, NVD4813NH NTD4813NH/D