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    mosfet 63ng

    Abstract: 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4863N NTD4863N/D mosfet 63ng 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng

    mosfet 63ng

    Abstract: 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    PDF NTD4863N NTD4863N/D mosfet 63ng 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N

    mosfet 63ng

    Abstract: 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4863N NTD4863N/D mosfet 63ng 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original
    PDF NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N