Untitled
Abstract: No abstract text available
Text: Series 28 Vdc PC 2-25A, 28 Vdc DC Solid-State Power Controller Part Number Description PC1502825-4800 25A, 28 Vdc Solid-State Power Controller PC1502815-4800 15A, 28 Vdc Solid-State Power Controller PC1502807-4800 7A, 28 Vdc Solid-State Power Controller PC1502802-4800
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PC1502825-4800
PC1502815-4800
PC1502807-4800
PC1502802-4800
MIL-STD-1275.
MIL-STD-883,
1500g,
MIL-STD-833,
MIL-PRF-28750
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PC170
Abstract: pw125 AMS-QQ-N-290 ITR110
Text: Series 28 Vdc PC170 MICROELECTRONICS 2-15A, 28 Vdc DC Solid-State Power Controller Part Number Description PC1702802-4800 2A, 28 Vdc Solid-State Power Controller PC1702807-4800 7A, 28 Vdc Solid-State Power Controller PC17028152-4800 15A, 28 Vdc Solid-State Power Controller
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PC170
PC1702802-4800
PC1702807-4800
PC17028152-4800
MIL-STD-1275.
MIL-PRF-28750
MIL-STD-883,
1500g,
PC170
pw125
AMS-QQ-N-290
ITR110
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VIBRATION MIL-STD-883-method 2007 TEST CONDITION A
Abstract: pw125 PC1502 pc150 PC1502802-4800 AMS-QQ-N-290 4800 FET
Text: Series 28 Vdc PC150 MICROELECTRONICS 2-25A, 28 Vdc DC Solid-State Power Controller Part Number Description PC1502825-4800 25A, 28 Vdc Solid-State Power Controller PC1502815-4800 15A, 28 Vdc Solid-State Power Controller PC1502807-4800 7A, 28 Vdc Solid-State Power Controller
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PC150
PC1502825-4800
PC1502815-4800
PC1502807-4800
PC1502802-4800
MIL-STD-1275.
MIL-PRF-28750
MIL-STD-883,
MIL-STD-833,
VIBRATION MIL-STD-883-method 2007 TEST CONDITION A
pw125
PC1502
pc150
PC1502802-4800
AMS-QQ-N-290
4800 FET
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Pacific Wireless
Abstract: PM2117 C2304 C2304TR
Text: Pacific Wireless C2304. 2844 Mar Vista Dr. Suite 101 Aptos, CA 95003 TEL 831 684-2474 FAX (831) 684-2494 www.pacwireless.com DATA SHEET MMDS / ISM / S-Band Downconverter 1800 to 4800 MHz Operation RF IN Features • • • • • • • 1800 to 4800 MHz RF
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C2304.
C2304
C2304TR
C2304Spec
Pacific Wireless
PM2117
C2304
C2304TR
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PM2117
Abstract: C2304 C2304TR 4800 8 PIN IC S-Band Power Amplifier intercept point
Text: Pacific Wireless C2304. 2844 Mar Vista Dr. Suite 101 Aptos, CA 95003 TEL 831 684-2474 FAX (831) 684-2494 www.pacwireless.com DATA SHEET MMDS / ISM / S-Band Downconverter 1800 to 4800 MHz Operation RF IN Features • • • • • • • 1800 to 4800 MHz RF
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C2304.
C2304
C2304TR
C2304Spec
PM2117
C2304
C2304TR
4800 8 PIN IC
S-Band Power Amplifier intercept point
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EPA480C-CP083
Abstract: No abstract text available
Text: Excelics EPA480C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED
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EPA480C-CP083
160MIL
Idss25
EPA480C-CP083
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EPA480C
Abstract: 408 7443 Excelics Semiconductor
Text: Excelics EPA480C DATA SHEET High Efficiency Heterojunction Power FET 680 • • • • • • +36.0dBm TYPICAL OUTPUT POWER 19.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA480C
120mA
EPA480C
408 7443
Excelics Semiconductor
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VP 4932
Abstract: EPA480C-180F
Text: Excelics EPA480C-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +36.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE
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EPA480C-180F
180MIL
VP 4932
EPA480C-180F
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EFA480C
Abstract: No abstract text available
Text: EFA480C Low Distortion GaAs Power FET FEATURES • • • • • • 680 104 +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE
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EFA480C
EFA480C
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EFA480B
Abstract: EFA480BV EPA480BV gm 90 156 369
Text: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480B/EFA480BV
EFA480B
EFA480BV
12GHz
EPA480BV
EFA480B
EFA480BV.
gm 90 156 369
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EPA480BV
Abstract: IGD 75a 12v EPA480B
Text: Excelics EPA480B/EPA480BV PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 12.0dB FOR EPA480BV AT 12GHz 0.4X 4800 MICRON RECESSED “MUSHROOM” GATE
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EPA480B/EPA480BV
EPA480B
EPA480BV
12GHz
120mA
20micons
EPA480B
EPA480BV
IGD 75a 12v
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EFA480C-CP083
Abstract: No abstract text available
Text: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480C-CP083
160MIL
EFA480C-CP083
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EFA480C-180F
Abstract: 180MIL
Text: Excelics EFA480C-180F PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +34.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA480C-180F
180MIL
EFA480C-180F
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IGD 75a 12v
Abstract: EPA480B EPA480BV
Text: EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA480B/EPA480BV
EPA480B
EPA480BV
12GHz
120mA
EPA480B
EPA480BV
EPA480BV.
IGD 75a 12v
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EFA480C
Abstract: No abstract text available
Text: Excelics EFA480C DATA SHEET Low Distortion GaAs Power FET 680 • • • • • • +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE
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EFA480C
EFA480C
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EFA480B
Abstract: No abstract text available
Text: Excelics EFA480B DATA SHEET Low Distortion GaAs Power FET • • • • • • 960 +34.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 8GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE
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EFA480B
12GHz
EFA480B
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EFC480C
Abstract: No abstract text available
Text: Excelics EFC480C PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +33.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK
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EFC480C
---S12--Mag
---S22--Mag
EFC480C
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VP 1176
Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
Text: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications
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TGF4250-EEU
34dBm
TGF4250-EEU
VP 1176
VP 1176 datasheet
TriQuint Semiconductor
bvgs
VP+1176
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet February 22, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications
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TGF4250-EEU
34dBm
TGF4250-EEU
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STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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product25
HV9961
2N7002 MARKING 1702
HV9963
HV9910
hv9910b
SR087
str 6655
STR 6656
DN2450
HV509
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PDF
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MwT-22
Abstract: 2w, GaAs FET
Text: MwT-22 2W High Linearity GaAs FET Preliminary Data Sheet June 2006 Features: • • • • • • • +33 dBm typical Output Power at 6 GHz 12 dB typical Small Signal Gain at 6 GHz 40% typical PAE at 6 GHz 0.5 x 4800 Micron Refractory Metal/Gold Gate Sorted into 100 mA Idss Bin Ranges
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MwT-22
MwT-22
2w, GaAs FET
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13A 56
Abstract: b5407-17
Text: R208/201 Integral Modems * Rockwell R208/201 Bell 208A/B and Bell 201C Modem INTRODUCTION The Rockwell R208/201 is a synchronous 4800, 2400 and 1200 bits per second bps modem. It is designed for operation over the public switched telephone network (PSTN) as well as leased
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R208/201
R208/201
08A/B
08A/B,
RS-232-C)
5001B
J22198
13A 56
b5407-17
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