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    4800 SERIES POWER MOSFET LIST Search Results

    4800 SERIES POWER MOSFET LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4800 SERIES POWER MOSFET LIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B667

    Abstract: MOSFET and parallel Schottky diode FDP 38 FDB6676S FDP6676 FDP6676S
    Text: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDP6676S FDB6676S FDP/B6676S FDP/B6676S FDP/B6676 B667 MOSFET and parallel Schottky diode FDP 38 FDB6676S FDP6676

    S 566 b

    Abstract: 7095 7085 VOLTAGE REGULATOR
    Text: FEATURES Power input voltage range: 2.95 V to 20 V On-board bias regulator Minimum output voltage: 0.6 V 0.6 V reference voltage with ±1.0% accuracy Supports all N-channel MOSFET power stages Available in 300 kHz, 600 kHz, and 1.0 MHz options No current sense resistor required


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    PDF ADP1878/ADP1879 ADP1879 14-Lead CP-14-2 CP-14-2 S 566 b 7095 7085 VOLTAGE REGULATOR

    V5500

    Abstract: BSC042N03MS 220V 5A Automatic Voltage Regulator 555 timer hiccup mode MARKING 5A regulator 5V
    Text: FEATURES Power input voltage range: 2.95 V to 20 V On-board bias regulator Minimum output voltage: 0.6 V 0.6 V reference voltage with ±1.0% accuracy Supports all N-channel MOSFET power stages Available in 300 kHz, 600 kHz, and 1.0 MHz options No current sense resistor required


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    PDF ADP1879 14-lead ADP1878/ CP-14-2 V5500 BSC042N03MS 220V 5A Automatic Voltage Regulator 555 timer hiccup mode MARKING 5A regulator 5V

    16SVPC270M

    Abstract: 7443551200 J 3305-1 BSC042N03MS pdcr 318 adp1870 3225A
    Text: Synchronous Buck Controller with Constant On-Time and Valley Current Mode ADP1870/ADP1871 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB COUT Q2 SW VREG DRVL PGND RRES LOAD Figure 1. 100


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    PDF ADP1870/ADP1871 ADP1870/ ADP1871 ADP1871 10-Lead RM-10 16SVPC270M 7443551200 J 3305-1 BSC042N03MS pdcr 318 adp1870 3225A

    wurth inductor

    Abstract: adp1870 pdcr 960
    Text: Synchronous Buck Controller with Constant On-Time and Valley Current Mode ADP1874/ADP1875 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VREG VOUT BST EN DRVH FB SW GND CIN CBST RRES Q1 L VOUT COUT Q2 LOAD DRVL RPGD VREG PGOOD SS VREG_IN CVREG VEXT


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    PDF ADP1874/ADP1875 ADP1875 16-lead RQ-16 RQ-16 wurth inductor adp1870 pdcr 960

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL APPLICATIONS CIRCUIT FEATURES VIN = 2.95V TO 20V VOUT RTOP CIN BST CBST EN DRVH FB SW RBOT GND Q1 L VOUT COUT Q2 LOAD DRVL RPGD VREG PGOOD SS VREG_IN CVREG VEXT CSS RTRK2 RES RRES TRACK VMASTER RTRK1 PGND Figure 1. Typical Applications Circuit 100


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    PDF ADP1875 16-lead RQ-16

    step down high current

    Abstract: No abstract text available
    Text: FEATURES TYPICAL APPLICATIONS CIRCUIT Power input voltage range: 2.95 V to 20 V On-board bias regulator Minimum output voltage: 0.6 V 0.6 V reference voltage with ±1.0% accuracy Supports all N-channel MOSFET power stages Available in 300 kHz, 600 kHz, and 1.0 MHz options


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    PDF ADP1878/ADP1879 ADP1879 14-Lead CP-14-2 CP-14-2 step down high current

    7085 VOLTAGE REGULATOR

    Abstract: GRM32ER61C476KE15L pdcr 318 circuit digram using ic 880
    Text: FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V The ADP1874/ADP1875 are versatile current mode, synchronous step-down controllers. They provide superior transient response, optimal stability, and current-limit protection by using a constant on-time, pseudo fixed frequency with a programmable current


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    PDF ADP1874/ADP1875 ADP1875 16-Lead RQ-16 RQ-16 7085 VOLTAGE REGULATOR GRM32ER61C476KE15L pdcr 318 circuit digram using ic 880

    mosfet 4800

    Abstract: FDS6676 FDS6676S
    Text: FDS6676S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDS6676S FDS6676S mosfet 4800 FDS6676

    mosfet 4800

    Abstract: 6676s mosfet 4800 circuit MOSFET and parallel Schottky diode FDS6676 FDS6676S
    Text: FDS6676S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDS6676S FDS6676S mosfet 4800 6676s mosfet 4800 circuit MOSFET and parallel Schottky diode FDS6676

    mosfet 4800

    Abstract: FDS6676S mosfet with schottky body diode FDS6676
    Text: FDS6676S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDS6676S FDS6676S mosfet 4800 mosfet with schottky body diode FDS6676

    wurth inductor

    Abstract: pdcr 318 adp1870 CEP125U-R80 744325072 a 1712 mosfet
    Text: FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB GND CVREG2 COUT Q2 SW VREG DRVL PGND RRES LOAD 100 VIN = 5V PSM 95 90 75 EFFICIENCY (%) 80 VIN = 16.5V 70 65 VIN = 13V 60 VIN = 13V (PSM)


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    PDF ADP1870/ADP1871 ADP1871 10-lead RM-10 CP-10-9 wurth inductor pdcr 318 adp1870 CEP125U-R80 744325072 a 1712 mosfet

    FDS6676S

    Abstract: FDS6676
    Text: FDS6676S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDS6676S FDS6676S FDS6676

    J 3305-1

    Abstract: 16SVPC270M wurth inductor ADP1870 transistor J 3305-1 GRM32ER71E226KE15L pdcr 960 7443551200 ACS 085 infineon cool MOSFET dynamic characteristic test
    Text: Synchronous Buck Controller with Constant On-Time and Valley Current Mode ADP1870/ADP1871 FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB COUT Q2 SW VREG DRVL PGND RRES LOAD Figure 1. 100


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    PDF ADP1870/ADP1871 ADP1870/ ADP1871 ADP1871 10-Lead RM-10 J 3305-1 16SVPC270M wurth inductor ADP1870 transistor J 3305-1 GRM32ER71E226KE15L pdcr 960 7443551200 ACS 085 infineon cool MOSFET dynamic characteristic test

    DB25H

    Abstract: C300h A-100 AN2010 AN2013 AN2015 Si3434DV T-25 ZL2005
    Text: Current Protection and Measurement Application Note May 01, 2009 AN2015.0 Introduction This application note describes the current-sensing apparatus incorporated in the ZL2005 power management and conversion IC. The various modes of using the hardware, appropriate settings and limitations


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    PDF AN2015 ZL2005 DB25H C300h A-100 AN2010 AN2013 Si3434DV T-25

    Untitled

    Abstract: No abstract text available
    Text: FEATURES TYPICAL APPLICATIONS CIRCUIT VIN = 2.95V TO 20V VIN CC VOUT RTOP RC ADP1870/ ADP1871 CC2 COMP/EN BST CBST FB GND CVREG2 L VOUT COUT Q2 SW VREG DRVL PGND RRES LOAD CVREG Figure 1. 100 VIN = 5V PSM 95 90 85 Telecom and networking systems Mid to high end servers


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    PDF ADP1871 10-lead ADP1870/ ADP1871 RM-10

    mosfet 4800

    Abstract: FDS6299S 4800 N-channel mosfet
    Text: tm FDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


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    PDF FDS6299S FDS6299S mosfet 4800 4800 N-channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: FDMS8350L N-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


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    PDF FDMS8350L

    FDS7766

    Abstract: No abstract text available
    Text: FDS7766 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS7766 FDS7766

    FDS7766

    Abstract: No abstract text available
    Text: FDS7766 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS7766 FDS7766

    FDS7066N3

    Abstract: C810
    Text: FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS7066N3 FDS7066N3 C810

    si7738

    Abstract: Deltron power FT
    Text: ZXGD3102EV1 USER GUIDE Description Performance • • • • • • • This evaluation circuit demonstrates a shared power system using low-side wired-OR switching for two -48V 5A supplies, and uses two ZXGD3102 Active Or-ing Controllers. The circuit is suitable for Telecom and other shared


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    PDF ZXGD3102EV1 ZXGD3102 150ns 195mV D-81541 si7738 Deltron power FT

    FDS7066N3

    Abstract: No abstract text available
    Text: FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    PDF FDS7066N3 FDS7066N3

    jrc 2100 audio amplifier

    Abstract: HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555
    Text: 2004.4 Management Linear ICs/ Renesas Standard Linear ICs Power Multi-Purpose Linear ICs Status List Topic 1—Series of Small Multi-Purpose Linear ICs for Low-Voltage Operation •··················································2


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    PDF M62249FP HA17431UPA M5295AP M51945AL M51945BL M51952AL M51952BL M51955AL M51955BL M51958AL jrc 2100 audio amplifier HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555