Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
48BGA
CS16LV81923low
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. 2.0 2.1 History Issue Date Initial issue with new naming rule Feb.15, 2005 Add 48CSP-6x8mm package outline Mar. 08.2005 Remark 1 Rev. 2.1 Chiplus reserves the right to change product or specification without notice.
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CS16LV81923
48CSP-6x8mm
CS16LV81923
48Ball
400mil
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CS16LV81923
Abstract: 850C SRAM 512K
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
48BGA
CS16LV8192
CS16LV81923
850C
SRAM 512K
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. 2.0 2.1 History Issue Date Initial issue with new naming rule Feb.15, 2005 Add 48CSP-6x8mm package outline Mar. 08.2005 Remark 1 Rev. 2.1 Chiplus reserves the right to change product or specification without notice.
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CS16LV81923
48CSP-6x8mm
CS16LV81923
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
48BGA
CS16Llow
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. 2.0 2.1 2.2 History Initial issue with new naming rule Add 48CSP-6x8mm package outline Revise 48CSP-8x10mm pkg code from W to K Issue Date Feb.15, 2005 Mar. 08, 2005
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
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AS6UA25616
Abstract: AS6UA25616-BC
Text: October 2000 AS6UA25616 2.3V to 3.6V 256Kx16 Intelliwatt low-power CMOS SRAM with one chip enable • Low power consumption: STANDBY - 72 µW max at 3.6V - 41 µW max at 2.7V • 1.2V data retention • Equal access and cycle times • Easy memory expansion with CS, OE inputs
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AS6UA25616
48-ball
400-mil
44-pin
AS6UA25616
AS6UA25616-BC
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lh28f320bjd
Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.
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November/1/2003
LH28F008BJ
LH28F008BJT-TTLxx
LH28F008BJT-BTLxx
40TSOP
LHF00L02
LHF00L03
lh28f320bjd
HI-LO SYSTEMS all11
LH28F320BJD-TTL
LRS13A8
minato Model 1890A
AF-9706
lh28f128bfht-pw
LH28F128BFHED
AF9706
AF9723
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100-PIN TQFP XILINX DIMENSION
Abstract: xilinx xc9536 digital clock xc9536-pc44 XC95216XL xc95144 pin diagram XC95108XL XC9536 XC95144 XC9500 pinout XC9536XL Series
Text: Ann Duft Xilinx, Inc. 408 879-4726 [email protected] Kathy Keller Oak Ridge Public Relations (408) 253-5042 [email protected] FOR IMMEDIATE RELEASE XILINX ANNOUNCES NEWEST MEMBER OF INDUSTRY’S FASTEST GROWING CPLD FAMILY New XC95144 device targets sweet spot of ISP CPLD market with lowest price per macrocell
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XC95144
1998--Xilinx,
XC9500
100-PIN TQFP XILINX DIMENSION
xilinx xc9536 digital clock
xc9536-pc44
XC95216XL
xc95144 pin diagram
XC95108XL
XC9536
XC9500 pinout
XC9536XL Series
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K6R1016C10
Abstract: k6r1016c1c
Text: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.
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K6R1016C1C-C/C-L,
K6R1016C1C-I/C-P
64Kx16
48-fine
K6R1016C1C-Z
K6R1016C1C-F
80/Typ.
25/Typ.
K6R1016C10
k6r1016c1c
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Untitled
Abstract: No abstract text available
Text: KM616FS4010 Family CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 1.0 Finalize - DC characteristics change ICC1 : 3mA → 4mA
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KM616FS4010
48-CSP
25/Typ.
45/Typ.
68/Typ.
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KM68FR1000AFI-10
Abstract: KM68FR1000AFI-7 KM68FR1000ATGI-10 KM68FR1000ATGI-7
Text: Advance KM68FR1000A Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Design target November 3, 1998 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
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KM68FR1000A
128Kx8
fabr75)
KM68FR1000AFI-10
KM68FR1000AFI-7
KM68FR1000ATGI-10
KM68FR1000ATGI-7
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Untitled
Abstract: No abstract text available
Text: K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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K6R1016V1C-C/C-L,
K6R1016V1C-I/C-P
64Kx16
48-fine
K6R1016V1C-Z
K6R1016V1C-F
I/O16
002MIN
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Untitled
Abstract: No abstract text available
Text: $GYDQFHLQIRUPDWLRQ $6& // 9.ð,QWHOOLZDWWORZSRZHU&02665$0 HDWXUHV • Smallest footprint packages - 48 ball FBGA - 400 mil TSOP II • Center power and ground pins for low noise • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA
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I/O15
AS7C34098LL)
AS7C254098LL
098LL-55TC
AS7C184098LL-70TC
AS7C184098LL-100TC
AS7C184098LL-70TI
AS7C184098LL-100TI
AS7C184098LL-70BC
AS7C184098LL-100BC
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Untitled
Abstract: No abstract text available
Text: KM616FS2010A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft June 25, 1998 1.0 Finalize - IDR test condition change: Vcc=1.5V to Vcc=1.2V
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KM616FS2010A
48-CSP
25/Typ.
45/Typ.
68/Typ.
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Untitled
Abstract: No abstract text available
Text: Advance information Features • Intelliw att active p o w e r red u ction circuitry • Easy m em o r y exp an sion w ith CEI, CE2, OË in p uts • 1.6 5 V to 1.9 5 V op eratin g range 0ESD 8 -7 • TTL/LVTTL-com patible, three-state I /O • JEDEC registered packaging
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AS7C181024U-35TC
AS7C181024IX-35TI
AS7C181024LL-3SBC
AS7C181024LL-35BÍ
AS7C18102411-5
AS7C181024LL-55TI
AS7C181024LL-5SBC
AS7C181024LL-55BÏ
AS7C181024LL-70TC
AS7C181024I1-70TI
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ 7C254096LL 2.5V 512K x8 IntelliwatT low power CMOS SRAM Features • • • • • Organization: 524,288 w ords x 8 bits Intelliwatt active pow er circuitry 2.3V to 3.0V operating range 2 5 /3 5 /5 5 /7 0 /1 0 0 ns address access tim e
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7C254096LL
44-pin
-54096LL-25TC
7C254096LL-25TI
7C254096LL-25BC
7C254096LL-25BI
7C254096LL-35TC
7C254096LL-35TI
7C254096LL-35BC
7C254096LL-35BI
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS7C251024LL A 2.5V 128K X 8 lntelliwatt,v low power CM O S SRAM Features • • • • Intelliwatt active power reduction circuitry 2.3V to 3.0V operating range Organization: 131,072 words x 8 bits High speed - 5 5 * /7 0 /1 0 0 ns address access time
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AS7C251024LL
32-pin
48-ball
Industr24LL-55TC
AS7C251024LL-70TC
AS7C251024LL-100TC
AS7C251024LL-55TT
AS7C251024LL-70TI
AS7C251024LL-100TI
AS7C251024LL-55BC
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Untitled
Abstract: No abstract text available
Text: H ig h p e r f o r m a n c e 6 4 K X 16 C M O S SR AM A S7C 31026L L 6 4 K X 16 In telliw att low power CMOS SRAM Advance information • • • • • Optimized design for battery operated portable systems Intelliwatt™ active pow er reduction circuitry
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31026L
S7C31026LL-55BC
31026LL-70BC
S7C31026LL-100B
S7C31026LL-35BI
AS7C31026LX-55BI
S7C31026LL-70B
-100BI
0019-A
00D1435
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Untitled
Abstract: No abstract text available
Text: KM616FR4010 Family Advance CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise Speed bin change : 70/100ns —> 85/100ns
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KM616FR4010
70/100ns
85/100ns
48-CSP
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Untitled
Abstract: No abstract text available
Text: Advance CMOS SRAM KM68FU2000A Family Document Title 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark July 9, 1998 Advance The attached datasheets are provided by SAM SU NG Electronics. S AM SU NG Electronics C O., LTD. reserve the right to change the specifications and
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KM68FU2000A
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